Stelian, Carmen, Duffar, Thierry (2005) Modeling of a space experiment on Bridgman solidification of concentrated semiconductor alloy. Journal of Crystal Growth, 275 (1). 175-184 doi:10.1016/j.jcrysgro.2004.10.084
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Modeling of a space experiment on Bridgman solidification of concentrated semiconductor alloy | ||
Journal | Journal of Crystal Growth | ||
Authors | Stelian, Carmen | Author | |
Duffar, Thierry | Author | ||
Year | 2005 (February) | Volume | 275 |
Issue | 1 | ||
Publisher | Elsevier BV | ||
DOI | doi:10.1016/j.jcrysgro.2004.10.084Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 2879711 | Long-form Identifier | mindat:1:5:2879711:3 |
GUID | 0 | ||
Full Reference | Stelian, Carmen, Duffar, Thierry (2005) Modeling of a space experiment on Bridgman solidification of concentrated semiconductor alloy. Journal of Crystal Growth, 275 (1). 175-184 doi:10.1016/j.jcrysgro.2004.10.084 | ||
Plain Text | Stelian, Carmen, Duffar, Thierry (2005) Modeling of a space experiment on Bridgman solidification of concentrated semiconductor alloy. Journal of Crystal Growth, 275 (1). 175-184 doi:10.1016/j.jcrysgro.2004.10.084 | ||
In | (2005, February) Journal of Crystal Growth Vol. 275 (1) Elsevier BV |
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