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Inoue, Tomoyasu, Shida, Shigenari, Kato, Kazuhiro (2006) Oxygen radical irradiation effect in reactive magnetron sputtering for orientation selective epitaxial growth of layers on Si(100) substrates. Journal of Crystal Growth, 289 (2). 534-539 doi:10.1016/j.jcrysgro.2005.11.102

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Reference TypeJournal (article/letter/editorial)
TitleOxygen radical irradiation effect in reactive magnetron sputtering for orientation selective epitaxial growth of layers on Si(100) substrates
JournalJournal of Crystal Growth
AuthorsInoue, TomoyasuAuthor
Shida, ShigenariAuthor
Kato, KazuhiroAuthor
Year2006 (April)Volume289
Issue2
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2005.11.102Search in ResearchGate
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Mindat Ref. ID2885231Long-form Identifiermindat:1:5:2885231:3
GUID0
Full ReferenceInoue, Tomoyasu, Shida, Shigenari, Kato, Kazuhiro (2006) Oxygen radical irradiation effect in reactive magnetron sputtering for orientation selective epitaxial growth of layers on Si(100) substrates. Journal of Crystal Growth, 289 (2). 534-539 doi:10.1016/j.jcrysgro.2005.11.102
Plain TextInoue, Tomoyasu, Shida, Shigenari, Kato, Kazuhiro (2006) Oxygen radical irradiation effect in reactive magnetron sputtering for orientation selective epitaxial growth of layers on Si(100) substrates. Journal of Crystal Growth, 289 (2). 534-539 doi:10.1016/j.jcrysgro.2005.11.102
In(2006, April) Journal of Crystal Growth Vol. 289 (2) Elsevier BV

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Inoue, Tomoyasu, Saito, Tomohiro, Shida, Shigenari (2007) Electron beam induced orientation selective epitaxial growth of layers on Si(100) substrates. Journal of Crystal Growth, 304 (1). 1-3 doi:10.1016/j.jcrysgro.2007.02.013
Inoue, T, Nakata, Y, Shida, S (2008) Electron beam induced orientation selective epitaxial growth of CeO2(100) layers on Si(100) substrates by dc reactive sputtering. Journal of Physics: Conference Series, 100. 82014pp. doi:10.1088/1742-6596/100/8/082014
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Valcheva, E., Birch, J., Persson, P. O. Γ…., Tungasmita, S., Hultman, L. (2006) Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering. Journal of Applied Physics, 100 (12). 123514pp. doi:10.1063/1.2402971
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