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Kim, H.J., Chandola, A., Bhat, R., Dutta, P.S. (2006) Forced convection induced thermal fluctuations at the solid–liquid interface and its effect on the radial alloy distribution in vertical Bridgman grown Ga1−xInxSb bulk crystals. Journal of Crystal Growth, 289 (2). 450-457 doi:10.1016/j.jcrysgro.2005.11.121

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Reference TypeJournal (article/letter/editorial)
TitleForced convection induced thermal fluctuations at the solid–liquid interface and its effect on the radial alloy distribution in vertical Bridgman grown Ga1−xInxSb bulk crystals
JournalJournal of Crystal Growth
AuthorsKim, H.J.Author
Chandola, A.Author
Bhat, R.Author
Dutta, P.S.Author
Year2006 (April)Volume289
Issue2
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2005.11.121Search in ResearchGate
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Mindat Ref. ID2885265Long-form Identifiermindat:1:5:2885265:0
GUID0
Full ReferenceKim, H.J., Chandola, A., Bhat, R., Dutta, P.S. (2006) Forced convection induced thermal fluctuations at the solid–liquid interface and its effect on the radial alloy distribution in vertical Bridgman grown Ga1−xInxSb bulk crystals. Journal of Crystal Growth, 289 (2). 450-457 doi:10.1016/j.jcrysgro.2005.11.121
Plain TextKim, H.J., Chandola, A., Bhat, R., Dutta, P.S. (2006) Forced convection induced thermal fluctuations at the solid–liquid interface and its effect on the radial alloy distribution in vertical Bridgman grown Ga1−xInxSb bulk crystals. Journal of Crystal Growth, 289 (2). 450-457 doi:10.1016/j.jcrysgro.2005.11.121
In(2006, April) Journal of Crystal Growth Vol. 289 (2) Elsevier BV

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Dutta, P.S., Sangunni, K.S., Bhat, H.L., Kumar, Vikram (1994) Experimental determination of melt-solid interface shapes and actual growth rates of gallium antimonide grown by vertical Bridgman method. Journal of Crystal Growth, 141 (3). 476-478 doi:10.1016/0022-0248(94)90255-0
Dutta, P.S., Bhat, H.L., Kumar, Vikram (1995) Numerical analysis of melt-solid interface shapes and growth rates of gallium antimonide in a single-zone vertical Bridgman furnace. Journal of Crystal Growth, 154 (3). 213-222 doi:10.1016/0022-0248(95)00152-2
Chang, Chiechun J., Brown, Robert A. (1983) Radial segregation induced by natural convection and melt/solid interface shape in vertical bridgman growth. Journal of Crystal Growth, 63 (2). 343-364 doi:10.1016/0022-0248(83)90225-7
Gennett, A., Lewis, D., Dutta, P.S. (2010) Low temperature growth of Ga1−xInxP bulk crystals from InSb-rich melt. Journal of Crystal Growth, 312 (8). 1080-1084 doi:10.1016/j.jcrysgro.2009.11.062
Udayashankar, N.K., Gopalakrishna Naik, K., Bhat, H.L. (1999) The influence of temperature gradient and lowering speed on the melt–solid interface shape of GaxIn1−xSb alloy crystals grown by vertical Bridgman technique. Journal of Crystal Growth, 203 (3). 333-339 doi:10.1016/s0022-0248(99)00109-8
Pino, R., Ko, Y., Dutta, P.S. (2006) Adhesion-free growth of AlSb bulk crystals in silica crucibles. Journal of Crystal Growth, 290 (1). 29-34 doi:10.1016/j.jcrysgro.2005.05.084
Dutta, P.S., Sangunni, K.S., Bhat, H.L., Kumar, Vikram (1994) Growth of gallium antimonide by vertical Bridgman technique with planar crystal-melt interface. Journal of Crystal Growth, 141 (1). 44-50 doi:10.1016/0022-0248(94)90090-6
Dold, P., Szofran, F.R., Benz, K.W. (2006) Thermoelectromagnetic convection in vertical Bridgman grown germanium–silicon. Journal of Crystal Growth, 291 (1). 1-7 doi:10.1016/j.jcrysgro.2006.02.055
Yesilyurt, S., Motakef, S., Grugel, R., Mazuruk, K. (2004) The effect of the traveling magnetic field (TMF) on the buoyancy-induced convection in the vertical Bridgman growth of semiconductors. Journal of Crystal Growth, 263 (1). 80-89 doi:10.1016/j.jcrysgro.2003.11.066
Wu, C.C., Ferng, N.J., Gau, H.J. (2007) Thermoelectric properties of Ge1−xSnxTe crystals grown by vertical Bridgman method. Journal of Crystal Growth, 304 (1). 127-132 doi:10.1016/j.jcrysgro.2007.02.036
Tsaur, S.C., Kou, S. (2007) Czochralski growth of Ga1−xInxSb single crystals with uniform compositions. Journal of Crystal Growth, 307 (2). 268-277 doi:10.1016/j.jcrysgro.2007.07.003
 
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