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Ma, Tongda, Tu, Hailing, Hu, Guangyong, Shao, Beiling, Liu, Ansheng (2006) Investigation of Si/SiGe/Si on bonded silicon-on-insulator by triple-axis X-ray diffraction and synchrotron radiation double-crystal topography. Journal of Crystal Growth, 289 (2). 489-493 doi:10.1016/j.jcrysgro.2005.12.102

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of Si/SiGe/Si on bonded silicon-on-insulator by triple-axis X-ray diffraction and synchrotron radiation double-crystal topography
JournalJournal of Crystal Growth
AuthorsMa, TongdaAuthor
Tu, HailingAuthor
Hu, GuangyongAuthor
Shao, BeilingAuthor
Liu, AnshengAuthor
Year2006 (April)Volume289
Issue2
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2005.12.102Search in ResearchGate
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Mindat Ref. ID2885341Long-form Identifiermindat:1:5:2885341:9
GUID0
Full ReferenceMa, Tongda, Tu, Hailing, Hu, Guangyong, Shao, Beiling, Liu, Ansheng (2006) Investigation of Si/SiGe/Si on bonded silicon-on-insulator by triple-axis X-ray diffraction and synchrotron radiation double-crystal topography. Journal of Crystal Growth, 289 (2). 489-493 doi:10.1016/j.jcrysgro.2005.12.102
Plain TextMa, Tongda, Tu, Hailing, Hu, Guangyong, Shao, Beiling, Liu, Ansheng (2006) Investigation of Si/SiGe/Si on bonded silicon-on-insulator by triple-axis X-ray diffraction and synchrotron radiation double-crystal topography. Journal of Crystal Growth, 289 (2). 489-493 doi:10.1016/j.jcrysgro.2005.12.102
In(2006, April) Journal of Crystal Growth Vol. 289 (2) Elsevier BV

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Ma, T.D., Tu, H.L., Hu, G.Y., Shao, B.L., Liu, A.S. (2006) X-ray triple-axis diffractometry investigation of Si/SiGe/Si on silicon-on-insulator subjected to in situ low-temperature annealing. Applied Surface Science, 253. 124-127 doi:10.1016/j.apsusc.2006.05.127
Hartmann, J.M., Burdin, M., Rolland, G., Billon, T. (2006) Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces. Journal of Crystal Growth, 294 (2). 288-295 doi:10.1016/j.jcrysgro.2006.06.043
Haselhuhn, Frank, Doyle, Stephen, Kind, Matthias (2006) Synchrotron radiation X-ray diffraction study of the particle formation of pseudo-polymorphic calcium oxalate. Journal of Crystal Growth, 289 (2). 727-733 doi:10.1016/j.jcrysgro.2005.12.115
Faleev, N., Sustersic, N., Bhargava, N., Kolodzey, J., Kazimirov, A.Yu., Honsberg, C. (2013) Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: I—High-resolution x-ray diffraction and x-ray topography. Journal of Crystal Growth, 365. 44-53 doi:10.1016/j.jcrysgro.2012.12.002
Hartmann, J.M., Papon, A.M., Barnes, J.P., Billon, T. (2009) Growth kinetics of SiGe/Si superlattices on bulk and silicon-on-insulator substrates for multi-channel devices. Journal of Crystal Growth, 311 (11). 3152-3157 doi:10.1016/j.jcrysgro.2009.03.027
Teubner, Thomas, Boeck, Torsten (2006) Influence of strain on solid–liquid phase equilibrium in heteroepitaxy of SiGe/Si(001). Journal of Crystal Growth, 289 (1). 366-369 doi:10.1016/j.jcrysgro.2005.11.087
Wan, Dongyun, He, Qing, Zhang, Lipeng, Jia, Quanjie, Zhang, Rengang, Zhang, Hui, Wang, Baoyi, Wei, Long (2004) Study on pyrite FeS2 films deposited on Si(100) substrate by synchrotron radiation surface X-ray diffraction method. Journal of Crystal Growth, 268 (1). 222-226 doi:10.1016/j.jcrysgro.2004.05.014
Härtwig, J., Köhler, S., Ludwig, W., Moriceau, H., Ohler, M., Prieur, E. (2002) X-ray Diffraction Topography at a Synchrotron Radiation Source Applied to the Study of Bonded Silicon on Insulator Material. Crystal Research and Technology, 37 (7) 705 doi:10.1002/1521-4079(200207)37:7<705::aid-crat705>3.0.co;2-q
Wei, Feng, Tu, Hailing, Wang, Yi, Yue, Shoujing, Du, Jun (2008) Temperature dependence of thin films growth on Si(001) substrates by pulsed laser deposition. Journal of Crystal Growth, 310 (18). 4065-4068 doi:10.1016/j.jcrysgro.2008.03.045
Zhang, Xinqiang, Tu, Hailing, Wei, Feng, Wang, Lei, Du, Jun (2009) Cube-on-cube epitaxy of Gd2O3-doped HfO2 films on Si(100) substrates by pulse laser deposition. Journal of Crystal Growth, 312 (1). 41-43 doi:10.1016/j.jcrysgro.2009.09.049
Liu, Zhengxin, Masuda, Atsushi, Kondo, Michio (2009) Investigation on the crystal growth process of spherical Si single crystals by melting. Journal of Crystal Growth, 311 (16). 4116-4122 doi:10.1016/j.jcrysgro.2009.06.042
 
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