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Yang, Deren, Chen, Jiahe, Li, Hong, Ma, Xiangyang, Tian, Daxi, Li, Liben, Que, Duanlin (2006) Micro-defects in Ge doped Czochralski grown Si crystals. Journal of Crystal Growth, 292 (2). 266-271 doi:10.1016/j.jcrysgro.2006.04.010

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Reference TypeJournal (article/letter/editorial)
TitleMicro-defects in Ge doped Czochralski grown Si crystals
JournalJournal of Crystal Growth
AuthorsYang, DerenAuthor
Chen, JiaheAuthor
Li, HongAuthor
Ma, XiangyangAuthor
Tian, DaxiAuthor
Li, LibenAuthor
Que, DuanlinAuthor
Year2006 (July)Volume292
Issue2
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2006.04.010Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2886145Long-form Identifiermindat:1:5:2886145:4
GUID0
Full ReferenceYang, Deren, Chen, Jiahe, Li, Hong, Ma, Xiangyang, Tian, Daxi, Li, Liben, Que, Duanlin (2006) Micro-defects in Ge doped Czochralski grown Si crystals. Journal of Crystal Growth, 292 (2). 266-271 doi:10.1016/j.jcrysgro.2006.04.010
Plain TextYang, Deren, Chen, Jiahe, Li, Hong, Ma, Xiangyang, Tian, Daxi, Li, Liben, Que, Duanlin (2006) Micro-defects in Ge doped Czochralski grown Si crystals. Journal of Crystal Growth, 292 (2). 266-271 doi:10.1016/j.jcrysgro.2006.04.010
In(2006, July) Journal of Crystal Growth Vol. 292 (2) Elsevier BV

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Tian, Daxi, Yang, Deren, Ma, Xiangyang, Li, Liben, Que, Duanlin (2006) Crystal growth and oxygen precipitation behavior of 300mm nitrogen-doped Czochralski silicon. Journal of Crystal Growth, 292 (2). 257-259 doi:10.1016/j.jcrysgro.2006.04.015
Chen, Jiahe, Yang, Deren, Li, Hong, Ma, Xiangyang, Tian, Daxi, Li, Liben, Que, Duainlin (2007) Crystal-originated particles in germanium-doped Czochralski silicon crystal. Journal of Crystal Growth, 306 (2). 262-268 doi:10.1016/j.jcrysgro.2007.05.034
Yang, Deren, Chen, Jiahe, Li, Hong, Ma, Xiangyang, Tian, Daxi, Li, Liben, Que, Duanlin (2006) Germanium effect on oxygen-related defects in Czochralski silicon. physica status solidi (a), 203 (4). 685-695 doi:10.1002/pssa.200564507
Yu, Xuegong, Yang, Deren, Ma, Xiangyang, Li, Hong, Shen, Yijun, Tian, Daxi, Li, Liben, Que, Duanlin (2003) Intrinsic gettering in germanium-doped Czochralski crystal silicon crystals. Journal of Crystal Growth, 250 (3). 359-363 doi:10.1016/s0022-0248(02)02487-9
Chen, Jiahe, Yang, Deren, Li, Hong, Ma, Xiangyang, Que, Duanlin (2006) Germanium effect on as-grown oxygen precipitation in Czochralski silicon. Journal of Crystal Growth, 291 (1). 66-71 doi:10.1016/j.jcrysgro.2006.03.013
Chen, Jiahe, Yang, Deren, Ma, Xiangyang, Li, Hong, Fu, Liming, Li, Ming, Que, Duanlin (2007) Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing. Journal of Crystal Growth, 308 (2). 247-251 doi:10.1016/j.jcrysgro.2007.06.037
Chen, Jiahe, Yang, Deren, Ma, Xiangyang, Zeng, Zhidan, Tian, Daxi, Li, Liben, Que, Duanlin, Gong, Longfei (2008) Influence of germanium doping on the mechanical strength of Czochralski silicon wafers. Journal of Applied Physics, 103 (12). 123521pp. doi:10.1063/1.2943272
Yu, Xuegong, Yang, Deren, Ma, Xiangyang, Yang, Jiansong, Li, Liben, Que, Duanlin (2002) Grown-in defects in nitrogen-doped Czochralski silicon. Journal of Applied Physics, 92 (1). 188-194 doi:10.1063/1.1481190
Li, Hong, Yang, Deren, Yu, Xuegong, Ma, Xiangyang, Tian, Daxi, Li, Liben, Que, Duanlin (2004) The effect of germanium doping on oxygen donors in Czochralski-grown silicon. Journal of Physics: Condensed Matter, 16 (32). 5745-5750 doi:10.1088/0953-8984/16/32/011
Chen, Jiahe, Yang, Deren, Ma, Xiangyang, Que, Duanlin (2006) Effect of carbon doping on oxygen precipitation behavior in internal gettering processing for Czochralski silicon. Journal of Crystal Growth, 290 (1). 61-66 doi:10.1016/j.jcrysgro.2006.01.029
Jiang, Huihua, Yang, Deren, Ma, Xiangyang, Tian, Daxi, Li, Liben, Que, Duanlin (2006) Growth of misfit dislocation-free p/p+ thick epitaxial silicon wafers on Ge–B-codoped substrates. Physica B: Condensed Matter, 376. 841-844 doi:10.1016/j.physb.2005.12.209
 
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