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Shenai-Khatkhate, Deodatta V., DiCarlo, Ronald L., Marsman, Charles J., Polcari, Robert F., Ware, Robert A., Woelk, Egbert (2007) Stable vapor transportation of solid sources in MOVPE of III–V compound semiconductors. Journal of Crystal Growth, 298. 176-180 doi:10.1016/j.jcrysgro.2006.10.195

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Reference TypeJournal (article/letter/editorial)
TitleStable vapor transportation of solid sources in MOVPE of III–V compound semiconductors
JournalJournal of Crystal Growth
AuthorsShenai-Khatkhate, Deodatta V.Author
DiCarlo, Ronald L.Author
Marsman, Charles J.Author
Polcari, Robert F.Author
Ware, Robert A.Author
Woelk, EgbertAuthor
Year2007 (January)Volume298
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2006.10.195Search in ResearchGate
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Mindat Ref. ID2887924Long-form Identifiermindat:1:5:2887924:0
GUID0
Full ReferenceShenai-Khatkhate, Deodatta V., DiCarlo, Ronald L., Marsman, Charles J., Polcari, Robert F., Ware, Robert A., Woelk, Egbert (2007) Stable vapor transportation of solid sources in MOVPE of III–V compound semiconductors. Journal of Crystal Growth, 298. 176-180 doi:10.1016/j.jcrysgro.2006.10.195
Plain TextShenai-Khatkhate, Deodatta V., DiCarlo, Ronald L., Marsman, Charles J., Polcari, Robert F., Ware, Robert A., Woelk, Egbert (2007) Stable vapor transportation of solid sources in MOVPE of III–V compound semiconductors. Journal of Crystal Growth, 298. 176-180 doi:10.1016/j.jcrysgro.2006.10.195
In(2007) Journal of Crystal Growth Vol. 298. Elsevier BV

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Shenai-Khatkhate, Deodatta V., Ware, Robert A., DiCarlo, Ronald L., Polcari, Robert F., Marsman, Charles J., Woelk, Egbert, Keiter, Alan G. (2006) Exceptionally stable vapor delivery of trimethylindium under intense OMVPE growth conditions. Journal of Crystal Growth, 287 (2). 679-683 doi:10.1016/j.jcrysgro.2005.10.095
Shenai-Khatkhate, Deodatta V., DiCarlo, Ronald L., Ware, Robert A. (2008) Accurate vapor pressure equation for trimethylindium in OMVPE. Journal of Crystal Growth, 310 (7). 2395-2398 doi:10.1016/j.jcrysgro.2007.11.196
Shenai-Khatkhate, Deodatta V., Goyette, Randall J., DiCarlo Jr., Ronald L., Dripps, Gregory (2004) Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors. Journal of Crystal Growth, 272 (1). 816-821 doi:10.1016/j.jcrysgro.2004.09.007
Shenai, Deodatta V., Timmons, Michael L., DiCarlo, Ronald L., Marsman, Charles J. (2004) Correlation of film properties and reduced impurity concentrations in sources for III/V-MOVPE using high-purity trimethylindium and tertiarybutylphosphine. Journal of Crystal Growth, 272 (1). 603-608 doi:10.1016/j.jcrysgro.2004.09.006
Woelk, Egbert, Shenai-Khatkhate, Deodatta V., DiCarlo, Ronald L., Amamchyan, Artashes, Power, Michael B., Lamare, Bruno, Beaudoin, Grégoire, Sagnes, Isabelle (2006) Designing novel organogermanium OMVPE precursors for high-purity germanium films. Journal of Crystal Growth, 287 (2). 684-687 doi:10.1016/j.jcrysgro.2005.10.094
Shenai, Deo V., DiCarlo, Ronald L., Power, Michael B., Amamchyan, Artashes, Goyette, Randall J., Woelk, Egbert (2007) Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE. Journal of Crystal Growth, 298. 172-175 doi:10.1016/j.jcrysgro.2006.10.194
Shenai-Khatkhate, Deodatta V., Webb, Paul, Cole-Hamilton, David J., Blackmore, Graham W., Brian Mullin, J. (1988) Ultra-pure organotellurium precursors for the low temperature MOVPE growth of II/VI compound semiconductors. Journal of Crystal Growth, 93 (1). 744-749 doi:10.1016/0022-0248(88)90613-6
Shenai, Deo V., Timmons, Michael L., DiCarlo, Ronald L., Lemnah, Gregory K., Stennick, Robert S. (2003) Correlation of vapor pressure equation and film properties with trimethylindium purity for the MOVPE grown III–V compounds. Journal of Crystal Growth, 248. 91-98 doi:10.1016/s0022-0248(02)01854-7
Woelk, E., DiCarlo, R. (2014) Control of vapor feed from liquid precursors to the OMVPE process. Journal of Crystal Growth, 393. 32-34 doi:10.1016/j.jcrysgro.2013.10.020
Woelk, E., DiCarlo, R. (2016) Analysis of TMGa output of on-board cylinders for chemical vapor deposition. Journal of Crystal Growth, 452. 226-229 doi:10.1016/j.jcrysgro.2016.02.036
Brunner, F., Hoffmann, V., Knauer, A., Steimetz, E., Schenk, T., Zettler, J.-T., Weyers, M. (2007) Growth optimization during III-nitride multiwafer MOVPE using real-time curvature, reflectance and true temperature measurements. Journal of Crystal Growth, 298. 202-206 doi:10.1016/j.jcrysgro.2006.10.186
 
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