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Xie, Z.L., Zhang, R., Liu, B., Li, L., Liu, C.X., Xiu, X.Q., Zhao, H., Han, P., Gu, S.L., Shi, Y., Zheng, Y.D. (2007) The high mobility InN film grown by MOCVD with GaN buffer layer. Journal of Crystal Growth, 298. 409-412 doi:10.1016/j.jcrysgro.2006.11.026

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Reference TypeJournal (article/letter/editorial)
TitleThe high mobility InN film grown by MOCVD with GaN buffer layer
JournalJournal of Crystal Growth
AuthorsXie, Z.L.Author
Zhang, R.Author
Liu, B.Author
Li, L.Author
Liu, C.X.Author
Xiu, X.Q.Author
Zhao, H.Author
Han, P.Author
Gu, S.L.Author
Shi, Y.Author
Zheng, Y.D.Author
Year2007 (January)Volume298
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2006.11.026Search in ResearchGate
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Mindat Ref. ID2887988Long-form Identifiermindat:1:5:2887988:8
GUID0
Full ReferenceXie, Z.L., Zhang, R., Liu, B., Li, L., Liu, C.X., Xiu, X.Q., Zhao, H., Han, P., Gu, S.L., Shi, Y., Zheng, Y.D. (2007) The high mobility InN film grown by MOCVD with GaN buffer layer. Journal of Crystal Growth, 298. 409-412 doi:10.1016/j.jcrysgro.2006.11.026
Plain TextXie, Z.L., Zhang, R., Liu, B., Li, L., Liu, C.X., Xiu, X.Q., Zhao, H., Han, P., Gu, S.L., Shi, Y., Zheng, Y.D. (2007) The high mobility InN film grown by MOCVD with GaN buffer layer. Journal of Crystal Growth, 298. 409-412 doi:10.1016/j.jcrysgro.2006.11.026
In(2007) Journal of Crystal Growth Vol. 298. Elsevier BV

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Liu, B., Zhang, R., Xie, Z.L., Ji, X.L., Jiang, R.L., Xiu, X.Q., Li, L., Liu, C.X., Yu, H.Q., Han, P., Gu, S.L., Shi, Y., Zheng, Y.D. (2007) The template effects on AlN/Al0.3Ga0.7N distributed Bragg reflectors grown by MOCVD. Journal of Crystal Growth, 298. 357-360 doi:10.1016/j.jcrysgro.2006.10.037
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