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Gao, Fubao, Chen, NuoFu, Liu, Lei, Zhang, X.W., Wu, Jinliang, Yin, Zhigang (2007) InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy. Journal of Crystal Growth, 304 (2). 472-475 doi:10.1016/j.jcrysgro.2007.03.011

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Reference TypeJournal (article/letter/editorial)
TitleInAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy
JournalJournal of Crystal Growth
AuthorsGao, FubaoAuthor
Chen, NuoFuAuthor
Liu, LeiAuthor
Zhang, X.W.Author
Wu, JinliangAuthor
Yin, ZhigangAuthor
Year2007 (June)Volume304
Issue2
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2007.03.011Search in ResearchGate
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Mindat Ref. ID2889849Long-form Identifiermindat:1:5:2889849:4
GUID0
Full ReferenceGao, Fubao, Chen, NuoFu, Liu, Lei, Zhang, X.W., Wu, Jinliang, Yin, Zhigang (2007) InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy. Journal of Crystal Growth, 304 (2). 472-475 doi:10.1016/j.jcrysgro.2007.03.011
Plain TextGao, Fubao, Chen, NuoFu, Liu, Lei, Zhang, X.W., Wu, Jinliang, Yin, Zhigang (2007) InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy. Journal of Crystal Growth, 304 (2). 472-475 doi:10.1016/j.jcrysgro.2007.03.011
In(2007, June) Journal of Crystal Growth Vol. 304 (2) Elsevier BV

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Peng, Changtao, Chen, NuoFu, Wu, Jinliang, Yin, Zhigang, Yu, Yude (2005) Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure. Journal of Crystal Growth, 285 (4). 459-465 doi:10.1016/j.jcrysgro.2005.08.043
Chen, Chenlong, Chen, Nuofu, Liu, Lifeng, Li, Yanli, Wu, Jinliang (2004) Ga1−xMnxSb grown on GaSb substrate by liquid phase epitaxy. Journal of Crystal Growth, 260 (1). 50-53 doi:10.1016/j.jcrysgro.2003.08.022
Gao, Fubao, Chen, NuoFu, Zhang, X. W., Wang, Yu, Liu, Lei, Yin, Zhigang, Wu, Jinliang (2008) Structural, electrical, and optical properties of InAs[sub x]Sb[sub 1−x] epitaxial films grown by liquid-phase epitaxy. Journal of Applied Physics, 104 (7). 73712pp. doi:10.1063/1.2989116
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Peng, Changtao, Chen, NuoFu, Gao, Fubao, Zhang, Xingwang, Chen, Chenlong, Wu, Jinliang, Yu, Yude (2006) Liquid-phase-epitaxy-grown InAsxSb1−x∕GaAs for room-temperature 8–12μm infrared detectors. Applied Physics Letters, 88 (24). 242108pp. doi:10.1063/1.2209709
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Wang, C.A, Shiau, D.A, Lin, A (2004) Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy. Journal of Crystal Growth, 261 (2). 385-392 doi:10.1016/j.jcrysgro.2003.11.032
Wang, Peng, Chen, Nuofu, Yin, Zhigang, Yang, Fei, Peng, Changtao (2006) Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering. Journal of Crystal Growth, 290 (1). 56-60 doi:10.1016/j.jcrysgro.2006.01.022
Zhang, G., Balakrishnan, K., Koyama, T., Kumagawa, M., Hayakawa, Y. (2003) Defect filtration of hollow pyramidal structured GaSb epilayers grown on GaSb patterned substrates by liquid phase epitaxy. Journal of Crystal Growth, 256 (3). 243-247 doi:10.1016/s0022-0248(03)01364-2
 
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