Reference Type | Journal (article/letter/editorial) |
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Title | Characterizations of GaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by MOCVD |
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Journal | Journal of Crystal Growth |
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Authors | Shen, X.Q. | Author |
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Shimizu, M. | Author |
Okumura, H. | Author |
Xu, F.J. | Author |
Shen, B. | Author |
Zhang, G.Y. | Author |
Year | 2009 (May) | Volume | 311 |
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Issue | 10 |
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Publisher | Elsevier BV |
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DOI | doi:10.1016/j.jcrysgro.2009.01.029Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 2894178 | Long-form Identifier | mindat:1:5:2894178:7 |
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GUID | 0 |
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Full Reference | Shen, X.Q., Shimizu, M., Okumura, H., Xu, F.J., Shen, B., Zhang, G.Y. (2009) Characterizations of GaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by MOCVD. Journal of Crystal Growth, 311 (10). 2853-2856 doi:10.1016/j.jcrysgro.2009.01.029 |
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Plain Text | Shen, X.Q., Shimizu, M., Okumura, H., Xu, F.J., Shen, B., Zhang, G.Y. (2009) Characterizations of GaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by MOCVD. Journal of Crystal Growth, 311 (10). 2853-2856 doi:10.1016/j.jcrysgro.2009.01.029 |
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In | (2009, May) Journal of Crystal Growth Vol. 311 (10) Elsevier BV |
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