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Choi, H., Jeong, Y., Cho, J., Jeon, M.H. (2009) Effectiveness of non-linear graded buffers for In(Ga,Al)As metamorphic layers grown on GaAs (001). Journal of Crystal Growth, 311 (4). 1091-1095 doi:10.1016/j.jcrysgro.2008.10.116

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Reference TypeJournal (article/letter/editorial)
TitleEffectiveness of non-linear graded buffers for In(Ga,Al)As metamorphic layers grown on GaAs (001)
JournalJournal of Crystal Growth
AuthorsChoi, H.Author
Jeong, Y.Author
Cho, J.Author
Jeon, M.H.Author
Year2009 (February)Volume311
Issue4
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2008.10.116Search in ResearchGate
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Mindat Ref. ID2895890Long-form Identifiermindat:1:5:2895890:9
GUID0
Full ReferenceChoi, H., Jeong, Y., Cho, J., Jeon, M.H. (2009) Effectiveness of non-linear graded buffers for In(Ga,Al)As metamorphic layers grown on GaAs (001). Journal of Crystal Growth, 311 (4). 1091-1095 doi:10.1016/j.jcrysgro.2008.10.116
Plain TextChoi, H., Jeong, Y., Cho, J., Jeon, M.H. (2009) Effectiveness of non-linear graded buffers for In(Ga,Al)As metamorphic layers grown on GaAs (001). Journal of Crystal Growth, 311 (4). 1091-1095 doi:10.1016/j.jcrysgro.2008.10.116
In(2009, February) Journal of Crystal Growth Vol. 311 (4) Elsevier BV

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Jeong, Y., Choi, H., Suzuki, T. (2007) Invalidity of graded buffers for InAs grown on GaAs (001)—A comparison between direct and graded-buffer growth. Journal of Crystal Growth, 301. 235-239 doi:10.1016/j.jcrysgro.2006.11.084
Asubar, J.T., Nakagawa, H., Jinbo, Y., Uchitomi, N. (2009) Low-temperature annealing effects on (Ga,Mn)As/Zn-GaAs superlattice structures grown on GaAs(001) substrates. Journal of Crystal Growth, 311 (3). 933-936 doi:10.1016/j.jcrysgro.2008.09.111
Choi, Hyonkwang, Cho, Joongseok, Jeon, Minhyon, Jeong, Yonkil (2009) Structural and Optical Properties of InAlAs Graded Buffers on GaAs (001) for Unipolar Devices. Journal of the Korean Physical Society, 54 (2). 643-647 doi:10.3938/jkps.54.643
Li, Kuilong, Wang, Wenjia (2018) Improved quality of In0.30Ga0.70As layers grown on GaAs substrates using undulating step-graded GaInP buffers. Journal of Crystal Growth, 496. 31-35 doi:10.1016/j.jcrysgro.2018.05.014
Chen, X.Y., Gu, Y., Zhang, Y.G., Ma, Y.J., Du, B., Zhang, J., Ji, W.Y., Shi, Y.H., Zhu, Y. (2018) Growth temperature optimization of GaAs-based In 0.83 Ga 0.17 As on In x Al 1 − x As buffers. Journal of Crystal Growth, 488. 51-56 doi:10.1016/j.jcrysgro.2018.02.016
Kato, T., Utsugi, Y., Ohara, T., Muranaka, T., Nabetani, Y., Matsumoto, T. (2009) Dependence of In2Se3 crystal structures grown on GaAs (001) substrates on growth temperature and VI/III ratio. Journal of Crystal Growth, 311 (3). 847-850 doi:10.1016/j.jcrysgro.2008.09.128
Saha, Sudip, Cassidy, Daniel T., Thompson, D.A. (2014) Comparison of different grading approaches in metamorphic buffers grown on a GaAs substrate. Journal of Crystal Growth, 386. 183-189 doi:10.1016/j.jcrysgro.2013.10.015
Heidemeyer, H, Müller, C, Schmidt, O.G (2004) Highly ordered arrays of In(Ga)As quantum dots on patterned GaAs(001) substrates. Journal of Crystal Growth, 261 (4). 444-449 doi:10.1016/j.jcrysgro.2003.09.030
Chernov, M.Yu., Prasolov, N.D., Ivanov, S.V., Solov'ev, V.A. (2024) Design engineering of non-linear graded InAlAs metamorphic buffer layers for efficient reduction of misfit dislocation density. Journal of Crystal Growth, 636. 127702 doi:10.1016/j.jcrysgro.2024.127702
Yoshikawa, M., Miura, K., Iguchi, Y., Kawamura, Y. (2009) Optical characterization of InGaAsN layers grown on InP substrates. Journal of Crystal Growth, 311 (7). 1745-1747 doi:10.1016/j.jcrysgro.2008.10.117
Tsuchida, R., Asubar, J.T., Jinbo, Y., Uchitomi, N. (2009) MBE growth and properties of GeMn thin films on (001) GaAs. Journal of Crystal Growth, 311 (3). 937-940 doi:10.1016/j.jcrysgro.2008.09.112
 
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