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(2010, April) Journal of Crystal Growth Vol. 312 (8) Elsevier BV

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Reference TypeJournal (issue)
JournalJournal of Crystal Growth
Year2010 (April)Volume312
Issue<   8   >
PublisherElsevier BV
Mindat Ref. ID2898650Long-form Identifiermindat:1:5:2898650:4
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Full Reference(2010, April) Journal of Crystal Growth Vol. 312 (8) Elsevier BV
Plain Text(2010, April) Journal of Crystal Growth Vol. 312 (8) Elsevier BV
In(2009) Journal of Crystal Growth Vol. 312. Elsevier BV

Contains

(2010) Preface. Journal of Crystal Growth, 312 (8). doi:10.1016/j.jcrysgro.2010.02.021
(2010) Editorial Board. Journal of Crystal Growth, 312 (8). doi:10.1016/s0022-0248(10)00112-0
Tseitlin, M., Mojaev, E., Roth, M. (2010) Growth of KTP crystals with large {001} facets. Journal of Crystal Growth, 312 (8). 1055-1058 doi:10.1016/j.jcrysgro.2009.10.016
Roth, M., Tseitlin, M. (2010) Growth of large size high optical quality KTP-type crystals. Journal of Crystal Growth, 312 (8). 1059-1064 doi:10.1016/j.jcrysgro.2009.10.019
Yonenaga, I., Taishi, T., Ohno, Y., Tokumoto, Y. (2010) Cellular structures in Czochralski-grown SiGe bulk crystal. Journal of Crystal Growth, 312 (8). 1065-1068 doi:10.1016/j.jcrysgro.2009.10.025
Bliss, David, Wang, Buguo, Suscavage, Michael, Lancto, Robert, Swider, Stacy, Eikenberry, Wayne, Lynch, Candace (2010) Ammonothermal GaN: Morphology and properties. Journal of Crystal Growth, 312 (8). 1069-1073 doi:10.1016/j.jcrysgro.2009.12.007
Lu, Chung-Wei, Chen, Jyh-Chen, Chen, Chien-Hung, Chen, Chun-Hung, Hsu, Wen-Ching, Liu, Che-Ming (2010) Effects of RF coil position on the transport processes during the stages of sapphire Czochralski crystal growth. Journal of Crystal Growth, 312 (8). 1074-1079 doi:10.1016/j.jcrysgro.2009.12.037
Gennett, A., Lewis, D., Dutta, P.S. (2010) Low temperature growth of Ga1−xInxP bulk crystals from InSb-rich melt. Journal of Crystal Growth, 312 (8). 1080-1084 doi:10.1016/j.jcrysgro.2009.11.062
Shah, Dimple, Pandya, Girish, Vyas, Sandip, Jani, Maunik, Jariwala, Bhakti (2010) Single crystal growth of InBi1−xSex by syringe pulling method. Journal of Crystal Growth, 312 (8). 1085-1089 doi:10.1016/j.jcrysgro.2009.12.052
Houchens, Brent C., Becla, Piotr, Tritchler, Stephanie E., Goza, Andres J., Bliss, David F. (2010) Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method. Journal of Crystal Growth, 312 (8). 1090-1094 doi:10.1016/j.jcrysgro.2009.12.051
Ramírez, C., Vijayan, N., Carcelén, V., Diéguez, E. (2010) One-inch diameter vertical gradient freezing furnace for growing Cd1-xZnxTe crystals. Journal of Crystal Growth, 312 (8). 1095-1097 doi:10.1016/j.jcrysgro.2009.10.018
Thomas, Kandace R., Cho, Jung Young, Millican, Jasmine N., Hembree, Richard D., Moldovan, M., Karki, Amar, Young, D.P., Chan, Julia Y. (2010) Crystal growth and physical properties of Ln2MGa12 (Ln=Pr, Nd, and Sm; M=Ni, Cu). Journal of Crystal Growth, 312 (8). 1098-1103 doi:10.1016/j.jcrysgro.2009.12.039
Avetissov, I.Ch., Sadovskii, A.P., Sukhanova, E.A., Zharikov, E.V., Belogorokhov, A.I., Levonovich, B.N. (2010) Czochralski crystal growth assisted by axial vibrational control technique. Journal of Crystal Growth, 312 (8). 1104-1108 doi:10.1016/j.jcrysgro.2009.10.014
Jundt, D.H., Kajiyama, M.C.C., Djukic, D., Falk, M. (2010) Optical methods to characterize crystal composition of MgO-doped lithium niobate. Journal of Crystal Growth, 312 (8). 1109-1113 doi:10.1016/j.jcrysgro.2009.10.046
Knuteson, D.J., Singh, N.B., Kanner, G., Berghmans, A., Wagner, B., Kahler, D., McLaughlin, S., Suhre, D., Gottlieb, M. (2010) Quaternary AgGaGenSe2(n+1) crystals for NLO applications. Journal of Crystal Growth, 312 (8). 1114-1117 doi:10.1016/j.jcrysgro.2009.10.051
Kawamura, Takahiro, Yoshimura, Masashi, Shimizu, Yohei, Nishioka, Masato, Fukushima, Yuji, Kaneda, Yushi, Kitaoka, Yasuo, Mori, Yusuke, Sasaki, Takatomo (2010) Crystal growth of in a dry atmosphere and from a stoichiometric melt composition. Journal of Crystal Growth, 312 (8). 1118-1121 doi:10.1016/j.jcrysgro.2009.10.043
Verozubova, G.A., Okunev, A.O., Gribenyukov, A.I., Trofimiv, A.Yu., Trukhanov, E.M., Kolesnikov, A.V. (2010) Growth and defect structure of ZnGeP2 crystals. Journal of Crystal Growth, 312 (8). 1122-1126 doi:10.1016/j.jcrysgro.2009.11.009
Zawilski, Kevin T., Schunemann, Peter G., Pollak, Thomas C., Zelmon, David E., Fernelius, Nils C., Kenneth Hopkins, F. (2010) Growth and characterization of large CdSiP2 single crystals. Journal of Crystal Growth, 312 (8). 1127-1132 doi:10.1016/j.jcrysgro.2009.10.034
Giles, N.C., Halliburton, L.E., Yang, Shan, Yang, Xiaocheng, Brant, A.T., Fernelius, N.C., Schunemann, P.G., Zawilski, K.T. (2010) Optical and EPR study of point defects in CdSiP2 crystals. Journal of Crystal Growth, 312 (8). 1133-1137 doi:10.1016/j.jcrysgro.2009.10.009
Joyce, David B., Schmid, Frederick (2010) Progress in the growth of large scale Ti:sapphire crystals by the heat exchanger method (HEM) for petawatt class lasers. Journal of Crystal Growth, 312 (8). 1138-1141 doi:10.1016/j.jcrysgro.2009.11.002
Singh, N.B., Kanner, G.S., Berghmans, A., Kahler, D., Lin, A., Wagner, B., Kelley, S.P., Knuteson, D.J., Holmstrom, R., Schepler, K.L., Peterson, R., Fejer, M.M., Harris, J.S. (2010) Characteristics of thick ZnSe films on quasi-phase-matched (QPM) GaAs substrates. Journal of Crystal Growth, 312 (8). 1142-1145 doi:10.1016/j.jcrysgro.2009.12.054
Tassev, Vladimir, Bliss, David, Lynch, Candace, Yapp, Calvin, Goodhue, William, Termkoa, Krongtip (2010) Low pressure–temperature–gas flow HVPE growth of GaP for nonlinear optical frequency conversion devices. Journal of Crystal Growth, 312 (8). 1146-1149 doi:10.1016/j.jcrysgro.2009.12.053
Khandpekar, M.M., Pati, S.P. (2010) Growth, characterization, non-linear optical properties and dislocation studies in new GCF crystals. Journal of Crystal Growth, 312 (8). 1150-1153 doi:10.1016/j.jcrysgro.2009.12.046
Oyebola, O., Hömmerich, U., Brown, E., Trivedi, S.B., Bluiett, A.G., Zavada, J.M. (2010) Growth and optical spectroscopy of Ho-doped KPb2Cl5 for infrared solid-state lasers. Journal of Crystal Growth, 312 (8). 1154-1156 doi:10.1016/j.jcrysgro.2009.10.010
Wang, Christine A., Goyal, Anish, Huang, Robin, Donnelly, Joseph, Calawa, Daniel, Turner, George, Sanchez-Rubio, Antonio, Hsu, Allen, Hu, Qing, Williams, B. (2010) Strain-compensated GaInAs/AlInAs/InP quantum cascade laser materials. Journal of Crystal Growth, 312 (8). 1157-1164 doi:10.1016/j.jcrysgro.2009.11.005
Kirch, Jeremy, Garrod, Toby, Kim, Sangho, Park, Joo H., Shin, Jae C., Mawst, L.J., Kuech, T.F., Song, X., Babcock, S.E., Vurgaftman, Igor, Meyer, Jerry R., Kuan, Tung-Sheng (2010) InAsyP1−y metamorphic buffer layers on InP substrates for mid-IR diode lasers. Journal of Crystal Growth, 312 (8). 1165-1169 doi:10.1016/j.jcrysgro.2009.12.057
Chou, Mitch M.C., Hang, Da-Ren, Chuan Wang, Shih, Chen, Chenlong, Lee, Chun-Yu (2010) Growth and characterizations of nonpolar [11−20] ZnO on [100] (La,Sr)(Al,Ta)O3 substrate by chemical vapor deposition. Journal of Crystal Growth, 312 (8). 1170-1174 doi:10.1016/j.jcrysgro.2009.12.006
Wang, Wei-Lin, Ho, Yen-Teng, Liang, Mei-Hui, Peng, Chun-Yen, Chang, Li (2010) The influence of inserted ZnO underlayer on the growth behavior of a-plane GaN on (001) LaAlO3. Journal of Crystal Growth, 312 (8). 1175-1178 doi:10.1016/j.jcrysgro.2009.12.040
Wang, Wei-Lin, Ho, Yen-Teng, Chiu, Kun-An, Peng, Chun-Yen, Chang, Li (2010) Structural property of m-plane ZnO epitaxial film grown on LaAlO3 (112) substrate. Journal of Crystal Growth, 312 (8). 1179-1182 doi:10.1016/j.jcrysgro.2009.12.050
Zepeda-Ruiz, Luis A., Gilmer, George H., Walton, Christopher C., Hamza, Alex V., Chason, Eric (2010) Surface morphology evolution during sputter deposition of thin films – lattice Monte Carlo simulations. Journal of Crystal Growth, 312 (8). 1183-1187 doi:10.1016/j.jcrysgro.2009.12.035
Gesheva, K.A., Ivanova, T., Kozlov, M., Boyadzhiev, S. (2010) Atmospheric pressure chemical vapour deposition of electrochromic Mo–W thin oxide films: Structural, optoelectronic and vibration properties. Journal of Crystal Growth, 312 (8). 1188-1192 doi:10.1016/j.jcrysgro.2010.01.001
Wu, Ping (2010) Etching study of dislocations in heavily nitrogen doped SiC crystals. Journal of Crystal Growth, 312 (8). 1193-1198 doi:10.1016/j.jcrysgro.2009.12.045
Yang, Ju Chan, Na, Han Gil, Kebede, Mesfin Abayneh, Kim, Hyo Sung, Kim, Hyoun Woo (2010) GaN-cored heteronanowires sheathed with Pt shells: Preparation and annealing studies. Journal of Crystal Growth, 312 (8). 1199-1204 doi:10.1016/j.jcrysgro.2009.12.049
Gladkov, P., Humlíček, J., Hulicius, E., Ơimeček, T., Paskova, T., Evans, K. (2010) Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe. Journal of Crystal Growth, 312 (8). 1205-1209 doi:10.1016/j.jcrysgro.2009.11.032
Suzuki, Takaomi, Iguchi, Eiichi, Soga, Hisashi (2010) Specific surface free energy of ruby single crystals from Mo- and Pb-based flux. Journal of Crystal Growth, 312 (8). 1210-1212 doi:10.1016/j.jcrysgro.2009.12.036
Bizarri, G. (2010) Scintillation mechanisms of inorganic materials: From crystal characteristics to scintillation properties. Journal of Crystal Growth, 312 (8). 1213-1215 doi:10.1016/j.jcrysgro.2009.12.063
Higgins, William M., Glodo, Jarek, Shirwadkar, Urmila, Churilov, Alexei, Van Loef, Edgar, Hawrami, Rastgo, Ciampi, Guido, Hines, Craig, Shah, Kanai S. (2010) Bridgman growth of Cs2LiYCl6:Ce and 6Li-enriched Cs26LiYCl6:Ce crystals for high resolution gamma ray and neutron spectrometers. Journal of Crystal Growth, 312 (8). 1216-1220 doi:10.1016/j.jcrysgro.2009.09.046
Churilov, Alexei V., Ciampi, Guido, Kim, Hadong, Higgins, William M., Cirignano, Leonard J., Olschner, Fred, Biteman, Viktor, Minchello, Mark, Shah, Kanai S. (2010) TlBr and TlBrxI1−x crystals for γ-ray detectors. Journal of Crystal Growth, 312 (8). 1221-1227 doi:10.1016/j.jcrysgro.2009.10.055
Bhattacharya, P., Groza, M., Cui, Y., Caudel, D., Wrenn, T., Nwankwo, A., Burger, A., Slack, G., Ostrogorsky, A.G. (2010) Growth of InI single crystals for nuclear detection applications. Journal of Crystal Growth, 312 (8). 1228-1232 doi:10.1016/j.jcrysgro.2009.12.021
Matuchova, M., Zdansky, K., Zavadil, J., Tonn, J., Abdul-Gader Jafar, Mousa M., Danilewsky, A.N., Cröll, A., Maixner, J. (2010) Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection. Journal of Crystal Growth, 312 (8). 1233-1239 doi:10.1016/j.jcrysgro.2009.12.034
Roof, Irina P., Smith, Mark D., zur Loye, H.-C. (2010) Crystal growth of K2UO4 and Na4UO5 using hydroxide fluxes. Journal of Crystal Growth, 312 (8). 1240-1243 doi:10.1016/j.jcrysgro.2009.12.002
Zhuravleva, M., Yang, K., Spurrier-Koschan, M., Szupryczynski, P., Yoshikawa, A., Melcher, C.L. (2010) Crystal growth and characterization of LuAG:Ce:Tb scintillator. Journal of Crystal Growth, 312 (8). 1244-1248 doi:10.1016/j.jcrysgro.2009.11.021
Jee, Sang Soo, Culver, Lauren, Li, Yuping, Douglas, Elliot P., Gower, Laurie B. (2010) Biomimetic mineralization of collagen via an enzyme-aided PILP process. Journal of Crystal Growth, 312 (8). 1249-1256 doi:10.1016/j.jcrysgro.2009.11.010
Battle, Keith, Alan Salter, E., Wesley Edmunds, R., Wierzbicki, Andrzej (2010) Potential of mean force calculation of the free energy of adsorption of Type I winter flounder antifreeze protein on ice. Journal of Crystal Growth, 312 (8). 1257-1261 doi:10.1016/j.jcrysgro.2009.12.038
Shao, I., Romankiw, L.T., Bonhote, C. (2010) Stress in electrodeposited CoFe alloy films. Journal of Crystal Growth, 312 (8). 1262-1266 doi:10.1016/j.jcrysgro.2009.11.061
Zhi Luo, Tian, Guo, Lian, Cammarata, Robert C. (2010) Real-time intrinsic stress generation during Volmer–Weber growth of Co by electrochemical deposition. Journal of Crystal Growth, 312 (8). 1267-1270 doi:10.1016/j.jcrysgro.2009.12.014
Gebregziabiher, Daniel K., Kim, Youn-Geun, Thambidurai, Chandru, Ivanova, Valentina, Haumesser, Paul-Henri, Stickney, John L. (2010) Electrochemical atomic layer deposition of copper nanofilms on ruthenium. Journal of Crystal Growth, 312 (8). 1271-1276 doi:10.1016/j.jcrysgro.2009.11.038
Gall, S., Becker, C., Lee, K.Y., Sontheimer, T., Rech, B. (2010) Growth of polycrystalline silicon on glass for thin-film solar cells. Journal of Crystal Growth, 312 (8). 1277-1281 doi:10.1016/j.jcrysgro.2009.12.065
Teng, Ying-Yang, Chen, Jyh-Chen, Lu, Chung-Wei, Chen, Chi-Yung (2010) The carbon distribution in multicrystalline silicon ingots grown using the directional solidification process. Journal of Crystal Growth, 312 (8). 1282-1290 doi:10.1016/j.jcrysgro.2009.11.020
Cederberg, Jeffrey G., Leonhardt, Darin, Sheng, Josephine J., Li, Qiming, Carroll, Malcolm S., Han, Sang M. (2010) GaAs/Si epitaxial integration utilizing a two-step, selectively grown Ge intermediate layer. Journal of Crystal Growth, 312 (8). 1291-1296 doi:10.1016/j.jcrysgro.2009.10.061
Appapillai, Anjuli, Sachs, Emanuel (2010) The effect of substrate material on nucleation behavior of molten silicon for photovoltaics. Journal of Crystal Growth, 312 (8). 1297-1300 doi:10.1016/j.jcrysgro.2009.12.010
Manning, I.C., Weng, X., Fanton, M.A., Snyder, D.W., Redwing, J.M. (2010) Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1−xN. Journal of Crystal Growth, 312 (8). 1301-1306 doi:10.1016/j.jcrysgro.2009.11.024
Chang, Shih-Pang, Yang, Hung-Chih, Lu, Tien-Chang, Kuo, Hao-Chung, Wang, Shing-Chung (2010) Influence of LT-GaN nucleation layer on the structural and optical properties of MOVPE-grown a-plane GaN. Journal of Crystal Growth, 312 (8). 1307-1310 doi:10.1016/j.jcrysgro.2009.11.059
Ee, Yik-Khoon, Li, Xiao-Hang, Biser, Jeff, Cao, Wanjun, Chan, Helen M., Vinci, Richard P., Tansu, Nelson (2010) Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire. Journal of Crystal Growth, 312 (8). 1311-1315 doi:10.1016/j.jcrysgro.2009.10.029
Ling, Shih-Chun, Chao, Chu-Li, Chen, Jun-Rong, Liu, Po-Chun, Ko, Tsung-Shine, Lu, Tien-Chang, Kuo, Hao-Chung, Wang, Shing-Chung, Cheng, Shun-Jen, Tsay, Jenq-Dar (2010) Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods. Journal of Crystal Growth, 312 (8). 1316-1320 doi:10.1016/j.jcrysgro.2009.10.047
Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., Sitar, Z. (2010) Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1−xN (0≀x≀1) deposition by LP OMVPE. Journal of Crystal Growth, 312 (8). 1321-1324 doi:10.1016/j.jcrysgro.2009.09.011
Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi (2010) Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy. Journal of Crystal Growth, 312 (8). 1325-1328 doi:10.1016/j.jcrysgro.2009.09.020
Hang, D.R., Chou, Mitch M.C., Mauder, C., Heuken, M. (2010) MOVPE growth and properties of non-polar InGaN/GaN multiple quantum wells on Îł-LiAlO2 substrates. Journal of Crystal Growth, 312 (8). 1329-1333 doi:10.1016/j.jcrysgro.2009.10.045
Feng, Jun, Owens, Mitch, Raynor, Mark W. (2010) Factors influencing the purity of electronic grade phosphine delivered to MOCVD tools. Journal of Crystal Growth, 312 (8). 1334-1339 doi:10.1016/j.jcrysgro.2009.11.012
Woelk, Egbert (2010) Performance of a central delivery system for metalorganic precursors. Journal of Crystal Growth, 312 (8). 1340-1342 doi:10.1016/j.jcrysgro.2009.09.045
Onitsuka, R., Sugiyama, M., Nakano, Y. (2010) High material efficiency MOVPE growth with in situ monitoring. Journal of Crystal Growth, 312 (8). 1343-1347 doi:10.1016/j.jcrysgro.2009.11.066
Kondo, Yoshiyuki, Deura, Momoko, Terada, Yuki, Hoshii, Takuya, Takenaka, Mitsuru, Takagi, Shinichi, Nakano, Yoshiaki, Sugiyama, Masakazu (2010) Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si. Journal of Crystal Growth, 312 (8). 1348-1352 doi:10.1016/j.jcrysgro.2009.11.064
Deura, Momoko, Kondo, Yoshiyuki, Takenaka, Mitsuru, Takagi, Shinichi, Nakano, Yoshiaki, Sugiyama, Masakazu (2010) Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE. Journal of Crystal Growth, 312 (8). 1353-1358 doi:10.1016/j.jcrysgro.2009.12.005
Terada, Yuki, Shimogaki, Yukihiro, Nakano, Yoshiaki, Sugiyama, Masakazu (2010) In situ anti-oxidation treatment in GaAs MOVPE by as desorption and passivation with AlP. Journal of Crystal Growth, 312 (8). 1359-1363 doi:10.1016/j.jcrysgro.2009.11.065
Wang, Yunpeng, Onitsuka, Ryusuke, Deura, Momoko, Yu, Wen, Sugiyama, Masakazu, Nakano, Yoshiaki (2010) In situ reflectance monitoring for the MOVPE of strain-balanced InGaAs/GaAsP quantum-wells. Journal of Crystal Growth, 312 (8). 1364-1369 doi:10.1016/j.jcrysgro.2009.11.063
Stan, M., Aiken, D., Cho, B., Cornfeld, A., Ley, V., Patel, P., Sharps, P., Varghese, T. (2010) High-efficiency quadruple junction solar cells using OMVPE with inverted metamorphic device structures. Journal of Crystal Growth, 312 (8). 1370-1374 doi:10.1016/j.jcrysgro.2009.10.059
Cederberg, J.G., Bender, D.A., Pack, M.V., Schmitt, R.L. (2010) Observation of optical bleaching at 1.06ÎŒm in AlInAs/AlGaInAs multiple quantum wells. Journal of Crystal Growth, 312 (8). 1375-1378 doi:10.1016/j.jcrysgro.2009.10.065
Shin, J.C., D’Souza, M., Kirch, J., Park, J.H., Mawst, L.J., Botez, D. (2010) Characteristics of mid-IR-emitting deep-well quantum cascade lasers grown by MOCVD. Journal of Crystal Growth, 312 (8). 1379-1382 doi:10.1016/j.jcrysgro.2009.09.034
Hospodková, A., Hulicius, E., Pangrác, J., Oswald, J., Vyskočil, J., Kuldová, K., Ơimeček, T., Hazdra, P., Caha, O. (2010) InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots. Journal of Crystal Growth, 312 (8). 1383-1387 doi:10.1016/j.jcrysgro.2009.10.057
Kim, Sangho, Kirch, Jeremy, Mawst, Luke (2010) Highly strained InAs quantum wells on InP substrates for mid-IR emission. Journal of Crystal Growth, 312 (8). 1388-1390 doi:10.1016/j.jcrysgro.2009.12.003
Forbes, David, Hubbard, Seth, Raffaelle, Ryne, McNatt, Jeremiah S. (2010) Au-catalyst-free epitaxy of InAs nanowires. Journal of Crystal Growth, 312 (8). 1391-1395 doi:10.1016/j.jcrysgro.2009.12.009
MĂŒller, M., Birkmann, B., Mosel, F., Westram, I., Seidl, A. (2010) Silicon EFG process development by multiscale modeling. Journal of Crystal Growth, 312 (8). 1397-1401 doi:10.1016/j.jcrysgro.2009.09.021
Kidess, A., Armour, N., Dost, S. (2010) Numerical study of the effect of magnetic fields in dissolution of silicon into germanium melt. Journal of Crystal Growth, 312 (8). 1402-1406 doi:10.1016/j.jcrysgro.2009.10.015
Dropka, Natasha, Miller, Wolfram, Menzel, Robert, Rehse, Uwe (2010) Numerical study on transport phenomena in a directional solidification process in the presence of travelling magnetic fields. Journal of Crystal Growth, 312 (8). 1407-1410 doi:10.1016/j.jcrysgro.2009.09.016
Pohl, Johan, MĂŒller, Michael, Seidl, Albrecht, Albe, Karsten (2010) Formation of parallel (111) twin boundaries in silicon growth from the melt explained by molecular dynamics simulations. Journal of Crystal Growth, 312 (8). 1411-1415 doi:10.1016/j.jcrysgro.2009.09.043
Epure, Simona, Duffar, Thierry, Braescu, Liliana (2010) On the capillary stability of the crystal–crucible gap during dewetted Bridgman process. Journal of Crystal Growth, 312 (8). 1416-1420 doi:10.1016/j.jcrysgro.2009.11.050
Braescu, L. (2010) On the pressure difference ranges which assure a specified gap size for semiconductor crystals grown in terrestrial dewetted Bridgman. Journal of Crystal Growth, 312 (8). 1421-1424 doi:10.1016/j.jcrysgro.2009.10.058
Uehara, Takuya (2010) Evaluation of the stress distribution in a cellular microstructure using a phase field model. Journal of Crystal Growth, 312 (8). 1425-1428 doi:10.1016/j.jcrysgro.2009.11.046
Avetissov, I.Ch., Sukhanova, E.A., Sadovskii, A.P., Kostikov, V.A., Zharikov, E.V. (2010) Experimental and numerical modeling of Czochralski crystal growth under axial vibrational control of the melt. Journal of Crystal Growth, 312 (8). 1429-1433 doi:10.1016/j.jcrysgro.2009.11.047
Prieler, Robert, Li, Daming, Emmerich, Heike (2010) Nucleation and successive microstructure evolution via phase-field and phase-field crystal method. Journal of Crystal Growth, 312 (8). 1434-1436 doi:10.1016/j.jcrysgro.2009.09.022
Chen, C.C., Lan, C.W. (2010) Efficient adaptive three-dimensional phase field simulation of free dendritic growth under natural convection. Journal of Crystal Growth, 312 (8). 1437-1442 doi:10.1016/j.jcrysgro.2009.11.008
Bredikhin, V.I., Malshakova, O.A., Yunakovsky, A.D. (2010) Traveling waves of step density and solution supersaturation in the assigned diffusion layer thickness model of step bunching. Journal of Crystal Growth, 312 (8). 1443-1448 doi:10.1016/j.jcrysgro.2009.12.015
Adomaitis, Raymond A. (2010) Development of a multiscale model for an atomic layer deposition process. Journal of Crystal Growth, 312 (8). 1449-1452 doi:10.1016/j.jcrysgro.2009.12.041
Nam, Phil-Ouk, Yi, Kyung-Woo (2010) Simulation of the thermal fluctuation according to the melt height in a CZ growth system. Journal of Crystal Growth, 312 (8). 1453-1457 doi:10.1016/j.jcrysgro.2009.11.037
Nam, Phil-Ouk, Son, Seung-Suk, Yi, Kyung-Woo (2010) The effect of polycrystalline rod insertion in a low Prandtl number melt for continuous Czochralski system. Journal of Crystal Growth, 312 (8). 1458-1462 doi:10.1016/j.jcrysgro.2010.01.013
Yeckel, Andrew, Lun, Lisa, Derby, Jeffrey J. (2010) Multi-scale crystal growth computations via an approximate block Newton method. Journal of Crystal Growth, 312 (8). 1463-1467 doi:10.1016/j.jcrysgro.2009.09.040

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(2010, May) Journal of Crystal Growth Vol. 312 (11) Elsevier BV
(2010, June) Journal of Crystal Growth Vol. 312 (12) Elsevier BV
(2010, July) Journal of Crystal Growth Vol. 312 (14) Elsevier BV
(2010, July) Journal of Crystal Growth Vol. 312 (15) Elsevier BV
(2010, August) Journal of Crystal Growth Vol. 312 (16) Elsevier BV
(2010, September) Journal of Crystal Growth Vol. 312 (18) Elsevier BV
(2010, September) Journal of Crystal Growth Vol. 312 (19) Elsevier BV
(2010, January) Journal of Crystal Growth Vol. 312 (2) Elsevier BV
(2010, October) Journal of Crystal Growth Vol. 312 (20) Elsevier BV
 
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