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Kempisty, Paweł, Krukowski, Stanisław (2012) Ab initio investigation of adsorption of atomic and molecular hydrogen at GaN(0001) surface. Journal of Crystal Growth, 358. 64-74 doi:10.1016/j.jcrysgro.2012.08.004

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Reference TypeJournal (article/letter/editorial)
TitleAb initio investigation of adsorption of atomic and molecular hydrogen at GaN(0001) surface
JournalJournal of Crystal Growth
AuthorsKempisty, PawełAuthor
Krukowski, StanisławAuthor
Year2012 (November)Volume358
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2012.08.004Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2904008Long-form Identifiermindat:1:5:2904008:5
GUID0
Full ReferenceKempisty, Paweł, Krukowski, Stanisław (2012) Ab initio investigation of adsorption of atomic and molecular hydrogen at GaN(0001) surface. Journal of Crystal Growth, 358. 64-74 doi:10.1016/j.jcrysgro.2012.08.004
Plain TextKempisty, Paweł, Krukowski, Stanisław (2012) Ab initio investigation of adsorption of atomic and molecular hydrogen at GaN(0001) surface. Journal of Crystal Growth, 358. 64-74 doi:10.1016/j.jcrysgro.2012.08.004
In(2012) Journal of Crystal Growth Vol. 358. Elsevier BV

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Kempisty, Paweł, Krukowski, Stanisław (2008) Crystal growth of GaN on (0001) face by HVPE: Ab initio simulations. Journal of Crystal Growth, 310 (5). 900-905 doi:10.1016/j.jcrysgro.2007.11.061
Krukowski, Stanisław, Kempisty, Paweł, Strąk, Paweł (2008) Role of chlorine in the dynamics of GaN(0001) surface during HVPE GaN growth—Ab initio study. Journal of Crystal Growth, 310 (7). 1391-1397 doi:10.1016/j.jcrysgro.2007.11.099
Kempisty, Paweł, Strak, Paweł, Sakowski, Konrad, Krukowski, Stanisław (2014) Adsorption of ammonia on hydrogen covered GaN(0001) surface – Density Functional Theory study. Journal of Crystal Growth, 401. 514-517 doi:10.1016/j.jcrysgro.2013.10.061
Kempisty, Paweł, Krukowski, Stanisław (2007) Crystal growth of GaN on (0001) face by HVPE-atomistic scale simulation. Journal of Crystal Growth, 303 (1). 37-43 doi:10.1016/j.jcrysgro.2006.12.057
Kempisty, Paweł, Strąk, Paweł, Krukowski, Stanisław (2011) Ab initio determination of atomic structure and energy of surface states of bare and hydrogen covered GaN (0001) surface — Existence of the Surface States Stark Effect (SSSE). Surface Science, 605 (7). 695-713 doi:10.1016/j.susc.2011.01.005
Kempisty, Paweł, Krukowski, Stanisław, Strąk, Paweł, Sakowski, Konrad (2009) Ab initio studies of electronic properties of bare GaN(0001) surface. Journal of Applied Physics, 106 (5). 54901pp. doi:10.1063/1.3204965
Kempisty, Paweł, Strak, Paweł, Sakowski, Konrad, Krukowski, Stanisław (2014) Adsorption of gallium on GaN(0001) surface in ammonia-rich conditions: A new effect associated with the Fermi level position. Journal of Crystal Growth, 401. 78-81 doi:10.1016/j.jcrysgro.2013.10.055
Kempisty, Paweł, Strak, Paweł, Sakowski, Konrad, Krukowski, Stanisław (2014) General aspects of the vapor growth of semiconductor crystals – A study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient. Journal of Crystal Growth, 390. 71-79 doi:10.1016/j.jcrysgro.2013.12.039
Kempisty, Paweł, Krukowski, Stanisław (2012) On the nature of Surface States Stark Effect at clean GaN(0001) surface. Journal of Applied Physics, 112 (11). 113704pp. doi:10.1063/1.4768256
Kempisty, Pawel, Strąk, Paweł, Sakowski, Konrad, Kangawa, Yoshihiro, Krukowski, Stanisław (2017) Thermodynamic foundations of applications of ab initio methods for determination of the adsorbate equilibria: hydrogen at the GaN(0001) surface. Physical Chemistry Chemical Physics, 19 (43). 29676-29684 doi:10.1039/c7cp05214f
Krukowski, Stanisław, Kempisty, Paweł, Strąk, Paweł (2013) Fermi level influence on the adsorption at semiconductor surfaces—ab initio simulations. Journal of Applied Physics, 114 (6). 63507pp. doi:10.1063/1.4817903
 
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