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Woodworth, A.A., Neudeck, P.G., Sayir, A., Solá, F., Dudley, M., Raghothamachar, B. (2014) Investigation of single crystal 4H-SiC growth by the Solvent–Laser Heated Floating Zone technique. Journal of Crystal Growth, 392. 34-40 doi:10.1016/j.jcrysgro.2014.01.050

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of single crystal 4H-SiC growth by the Solvent–Laser Heated Floating Zone technique
JournalJournal of Crystal Growth
AuthorsWoodworth, A.A.Author
Neudeck, P.G.Author
Sayir, A.Author
Solá, F.Author
Dudley, M.Author
Raghothamachar, B.Author
Year2014 (April)Volume392
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2014.01.050Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2907462Long-form Identifiermindat:1:5:2907462:0
GUID0
Full ReferenceWoodworth, A.A., Neudeck, P.G., Sayir, A., Solá, F., Dudley, M., Raghothamachar, B. (2014) Investigation of single crystal 4H-SiC growth by the Solvent–Laser Heated Floating Zone technique. Journal of Crystal Growth, 392. 34-40 doi:10.1016/j.jcrysgro.2014.01.050
Plain TextWoodworth, A.A., Neudeck, P.G., Sayir, A., Solá, F., Dudley, M., Raghothamachar, B. (2014) Investigation of single crystal 4H-SiC growth by the Solvent–Laser Heated Floating Zone technique. Journal of Crystal Growth, 392. 34-40 doi:10.1016/j.jcrysgro.2014.01.050
In(2014) Journal of Crystal Growth Vol. 392. Elsevier BV

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Woodworth, Andrew A., Neudeck, Philip G., Sayir, Ali, Spry, David J., Trunek, Andrew J., Powell, J. Anthony (2012) SiC Growth by Solvent-Laser Heated Floating Zone. Materials Science Forum, 717. 49-52 doi:10.4028/www.scientific.net/msf.717-720.49
Kusunoki, Kazuhiko, Kamei, Kazuhito, Seki, Kazuaki, Harada, Shunta, Ujihara, Toru (2014) Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent. Journal of Crystal Growth, 392. 60-65 doi:10.1016/j.jcrysgro.2014.01.044
Takagi, K., Ishii, M. (1977) Growth of LaB6 single crystals by a laser heated floating zone method. Journal of Crystal Growth, 40 (1). 1-5 doi:10.1016/0022-0248(77)90025-2
Mohan, A., Büchner, B., Wurmehl, S., Hess, C. (2014) Growth of single crystalline delafossite LaCuO2 by the travelling-solvent floating zone method. Journal of Crystal Growth, 402. 304-307 doi:10.1016/j.jcrysgro.2014.06.023
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Wang, H., Wu, F., Byrappa, S., Raghothamachar, B., Dudley, M., Wu, P., Zwieback, I., Souzis, A., Ruland, G., Anderson, T. (2014) Synchrotron topography studies of the operation of double-ended Frank–Read partial dislocation sources in 4H-SiC. Journal of Crystal Growth, 401. 423-430 doi:10.1016/j.jcrysgro.2014.01.078
Hu, Shanshan, Liu, Yafei, Cheng, Qianyu, Chen, Zeyu, Tong, Xiao, Raghothamachar, Balaji, Dudley, Michael (2024) Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals. Journal of Crystal Growth, 628. 127542 doi:10.1016/j.jcrysgro.2023.127542
Guo, Jianqiu, Yang, Yu, Raghothamachar, Balaji, Kim, Taejin, Dudley, Michael, Kim, Jungyu (2017) Understanding the microstructures of triangular defects in 4H-SiC homoepitaxial. Journal of Crystal Growth, 480. 119-125 doi:10.1016/j.jcrysgro.2017.10.015
Gao, B., Kakimoto, K. (2014) Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H-SiC single crystals. Journal of Crystal Growth, 392. 92-97 doi:10.1016/j.jcrysgro.2014.02.005
Takagi, K., Ishii, M. (1977) Crystal growth of sapphire filaments by a laser-heated floating zone technique. Journal of Materials Science, 12. 517-521 doi:10.1007/bf00540276
Dudley, M., Vetter, W.M., Neudeck, P.G. (2002) Polytype identification in heteroepitaxial 3C-SiC grown on 4H-SiC mesas using synchrotron white beam X-ray topography. Journal of Crystal Growth, 240 (1). 22-33 doi:10.1016/s0022-0248(02)00827-8
 
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