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Lebedev, A.A., Zamoryanskaya, M.V., Davydov, S. Yu., Kirilenko, D.A., Lebedev, S.P., Sorokin, L.M., Shustov, D.B., Shcheglov, M.P. (2014) A study of the intermediate layer in 3C–SiC/6H–SiC heterostructures. Journal of Crystal Growth, 396. 100-103 doi:10.1016/j.jcrysgro.2014.03.030

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Reference TypeJournal (article/letter/editorial)
TitleA study of the intermediate layer in 3C–SiC/6H–SiC heterostructures
JournalJournal of Crystal Growth
AuthorsLebedev, A.A.Author
Zamoryanskaya, M.V.Author
Davydov, S. Yu.Author
Kirilenko, D.A.Author
Lebedev, S.P.Author
Sorokin, L.M.Author
Shustov, D.B.Author
Shcheglov, M.P.Author
Year2014 (June)Volume396
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2014.03.030Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2907754Long-form Identifiermindat:1:5:2907754:8
GUID0
Full ReferenceLebedev, A.A., Zamoryanskaya, M.V., Davydov, S. Yu., Kirilenko, D.A., Lebedev, S.P., Sorokin, L.M., Shustov, D.B., Shcheglov, M.P. (2014) A study of the intermediate layer in 3C–SiC/6H–SiC heterostructures. Journal of Crystal Growth, 396. 100-103 doi:10.1016/j.jcrysgro.2014.03.030
Plain TextLebedev, A.A., Zamoryanskaya, M.V., Davydov, S. Yu., Kirilenko, D.A., Lebedev, S.P., Sorokin, L.M., Shustov, D.B., Shcheglov, M.P. (2014) A study of the intermediate layer in 3C–SiC/6H–SiC heterostructures. Journal of Crystal Growth, 396. 100-103 doi:10.1016/j.jcrysgro.2014.03.030
In(2014) Journal of Crystal Growth Vol. 396. Elsevier BV

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Lebedev, Alexander A., Zamoryanskaya, Maria V., Davydov, Sergey Yu., Kirilenko, Demid A., Lebedev, Sergey P., Sorokin, Lev M., Shustov, Denis B., Shcheglov, Mikhail P. (2014) A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures. Materials Science Forum, 778. 247-250 doi:10.4028/www.scientific.net/msf.778-780.247
Lebedev, A., Tairov, Yu (2014) Polytypism in SiC: Theory and experiment. Journal of Crystal Growth, 401. 392-396 doi:10.1016/j.jcrysgro.2014.01.021
Lebedev, A. A., Zelenin, V. V., Abramov, P. L., Lebedev, S. P., Smirnov, A. N., Sorokin, L. M., Shcheglov, M. P., Yakimova, R. (2007) Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates. Technical Physics Letters, 33. 524-526 doi:10.1134/s1063785007060235
Savkina, N.S., Strel'chuk, Anatoly M., Sorokin, L.M., Mosina, G.N., Tregubova, Alla S., Solov'ev, V.V., Lebedev, Alexander A. (2003) Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation. Materials Science Forum, 433. 293-296 doi:10.4028/www.scientific.net/msf.433-436.293
Lebedev, Alexander A., Abramov, Pavel L., Agrinskaya, Nina V., Kozub, Ven I., Kuznetsov, Alexey N., Lebedev, Sergey P., Oganesyan, Gagik A., Sorokin, L.M., Chernyaev, A.V., Shamshur, Dmitrii (2008) Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures. Materials Science Forum, 600. 541-544 doi:10.4028/www.scientific.net/msf.600-603.541
Lebedev, Alexander A., Abramov, Pavel L., Bogdanova, Elena V., Davydov, Sergey Y., Lebedev, Sergey P., Nelson, Dmitrii K., Oganesyan, Gagik A., Razbirin, Boris S., Tregubova, Alla S. (2010) Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures. Materials Science Forum, 645. 259-262 doi:10.4028/www.scientific.net/msf.645-648.259
Myasoedov, A. V., Mynbaeva, M. G., Lebedev, S. P., Priobrazhenskii, S. Iu., Amelchuk, D. G., Kirilenko, D. A., Lebedev, A. A. (2024) TEM investigation of the interface formation during transfer of 3C-SiC(001) layer onto 6H-SiC(0001) wafer. Journal of Applied Physics, 136 (11). doi:10.1063/5.0227316
Lebedev, A. A., Strel’chuk, A. M., Davydov, D. V., Savkina, N. S., Kuznetsov, A. N., Sorokin, L. M. (2002) Electrical characteristics of (p)3C-SiC-(n)6H-SiC heterojunctions. Technical Physics Letters, 28. 792-794 doi:10.1134/1.1511788
Lebedev, A.A., Ledyaev, O.Yu., Strel’chuk, A.M., Kuznetsov, A.N., Nikolaev, A.E., Zubrilov, A.S., Volkova, A.A. (2007) Investigation of n-GaN/p-SiC/n-SiC heterostructures. Journal of Crystal Growth, 300 (1). 239-241 doi:10.1016/j.jcrysgro.2006.11.027
Lebedev, A. A., Davydov, S. Yu., Sorokin, L. M., Shakhov, L. V. (2015) Fabrication of quasi-superlattices at the interface between 3C-SiC epitaxial layer and substrates of hexagonal SiC polytypes by sublimation epitaxy in vacuum. Technical Physics Letters, 41. 1156-1158 doi:10.1134/s106378501512010x
Lebedev, Sergey P., Lebedev, Alexander A., Sitnikova, Alla A., Kirilenko, Demid A., Seredova, Natasha V., Tregubova, Alla S., Scheglov, Mikhail P. (2013) Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations. Materials Science Forum, 740. 267-270 doi:10.4028/www.scientific.net/msf.740-742.267
 
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