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Richter, E., Gridneva, E., Weyers, M., Tränkle, G. (2016) Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride. Journal of Crystal Growth, 456. 97-100 doi:10.1016/j.jcrysgro.2016.05.016

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Reference TypeJournal (article/letter/editorial)
TitleFe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride
JournalJournal of Crystal Growth
AuthorsRichter, E.Author
Gridneva, E.Author
Weyers, M.Author
Tränkle, G.Author
Year2016 (December)Volume456
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.05.016Search in ResearchGate
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Mindat Ref. ID2912572Long-form Identifiermindat:1:5:2912572:0
GUID0
Full ReferenceRichter, E., Gridneva, E., Weyers, M., Tränkle, G. (2016) Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride. Journal of Crystal Growth, 456. 97-100 doi:10.1016/j.jcrysgro.2016.05.016
Plain TextRichter, E., Gridneva, E., Weyers, M., Tränkle, G. (2016) Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride. Journal of Crystal Growth, 456. 97-100 doi:10.1016/j.jcrysgro.2016.05.016
In(2016) Journal of Crystal Growth Vol. 456. Elsevier BV

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Richter, E., Zeimer, U., Hagedorn, S., Wagner, M., Brunner, F., Weyers, M., Tränkle, G. (2010) Hydride vapor phase epitaxy of GaN boules using high growth rates. Journal of Crystal Growth, 312 (18). 2537-2541 doi:10.1016/j.jcrysgro.2010.04.009
Gridneva, E., Richter, E., Feneberg, M., Weyers, M., Goldhahn, R., Tränkle, G. (2015) Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN. physica status solidi (b), 252 (5). 1180-1188 doi:10.1002/pssb.201451609
Richter, E., Gründer, M., Netzel, C., Weyers, M., Tränkle, G. (2012) Growth of GaN boules via vertical HVPE. Journal of Crystal Growth, 350 (1). 89-92 doi:10.1016/j.jcrysgro.2011.12.030
Mogilatenko, A., Hagedorn, S., Richter, E., Zeimer, U., Goran, D., Weyers, M., Tränkle, G. (2013) Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy. Journal of Applied Physics, 113 (9). 93505pp. doi:10.1063/1.4794098
Hennig, Ch., Richter, E., Weyers, M., Tränkle, G. (2008) Freestanding 2-in GaN layers using lateral overgrowth with HVPE. Journal of Crystal Growth, 310 (5). 911-915 doi:10.1016/j.jcrysgro.2007.11.102
Molnar, R.J., Götz, W., Romano, L.T., Johnson, N.M. (1997) Growth of gallium nitride by hydride vapor-phase epitaxy. Journal of Crystal Growth, 178 (1). 147-156 doi:10.1016/s0022-0248(97)00075-4
Kumagai, Yoshinao, Satoh, Fumitaka, Togashi, Rie, Murakami, Hisashi, Takemoto, Kikurou, Iihara, Junji, Yamaguchi, Koji, Koukitu, Akinori (2006) Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substrates. Journal of Crystal Growth, 296 (1). 11-14 doi:10.1016/j.jcrysgro.2006.08.027
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Liu, Dengfei, Xiong, Yu, Li, Jian, Xiao, Wenjia, Wang, Gang (2023) Design of large horizontal gallium nitride hydride vapor-phase epitaxy equipment and optimization of process parameters. Journal of Crystal Growth, 613. 127231 doi:10.1016/j.jcrysgro.2023.127231
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