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Letts, Edward, Key, Daryl, Hashimoto, Tadao (2016) Reduction of crack density in ammonothermal bulk GaN growth. Journal of Crystal Growth, 456. 27-32 doi:10.1016/j.jcrysgro.2016.08.023

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Reference TypeJournal (article/letter/editorial)
TitleReduction of crack density in ammonothermal bulk GaN growth
JournalJournal of Crystal Growth
AuthorsLetts, EdwardAuthor
Key, DarylAuthor
Hashimoto, TadaoAuthor
Year2016 (December)Volume456
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.08.023Search in ResearchGate
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Mindat Ref. ID2912604Long-form Identifiermindat:1:5:2912604:8
GUID0
Full ReferenceLetts, Edward, Key, Daryl, Hashimoto, Tadao (2016) Reduction of crack density in ammonothermal bulk GaN growth. Journal of Crystal Growth, 456. 27-32 doi:10.1016/j.jcrysgro.2016.08.023
Plain TextLetts, Edward, Key, Daryl, Hashimoto, Tadao (2016) Reduction of crack density in ammonothermal bulk GaN growth. Journal of Crystal Growth, 456. 27-32 doi:10.1016/j.jcrysgro.2016.08.023
In(2016) Journal of Crystal Growth Vol. 456. Elsevier BV

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Letts, Edward, Hashimoto, Tadao, Hoff, Sierra, Key, Daryl, Male, Keith, Michaels, Mathew (2014) Development of GaN wafers via the ammonothermal method. Journal of Crystal Growth, 403. 3-6 doi:10.1016/j.jcrysgro.2014.06.004
Hashimoto, Tadao, Letts, Edward, Ikari, Masanori, Nojima, Yoshihiro (2010) Improvement of crystal quality in ammonothermal growth of bulk GaN. Journal of Crystal Growth, 312 (18). 2503-2506 doi:10.1016/j.jcrysgro.2010.04.002
Hashimoto, Tadao, Letts, Edward R., Key, Daryl (2022) Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices. Crystals, 12 (8) 1085 doi:10.3390/cryst12081085
Hashimoto, Tadao, Key, Daryl, Letts, Edward, Gaddy, Mathew, Gregory, Austin, Dickens, James, West, Tim, Zhao, Wei, Guo, Mengzhe, Buyuklimanli, Temel (2023) Resistivity of manganese doped GaN grown by near equilibrium ammonothermal (NEAT) method. Journal of Crystal Growth, 621. Elsevier BV. 127364 doi:10.1016/j.jcrysgro.2023.127364
Letts, Edward, Sun, Yimeng, Key, Daryl, Jordan, Benjamin, Hashimoto, Tadao (2018) X-ray characterization technique for the assessment of surface damage in GaN wafers. Journal of Crystal Growth, 501. 13-17 doi:10.1016/j.jcrysgro.2018.08.025
Nojima, Yoshihiro, Ikari, Masanori, Letts, Edward, Hashimoto, Tadao (2011) Improvement of structural quality in the initial stage of GaN growth by basic ammonothermal method. Journal of Crystal Growth, 317 (1). 132-134 doi:10.1016/j.jcrysgro.2011.01.019
Letts, Edward, Hashimoto, Tadao, Ikari, Masanori, Nojima, Yoshihiro (2012) Development of GaN wafers for solid-state lighting via the ammonothermal method. Journal of Crystal Growth, 350 (1). 66-68 doi:10.1016/j.jcrysgro.2011.12.024
Hashimoto, Tadao, Wu, Feng, Speck, James S., Nakamura, Shuji (2008) Ammonothermal growth of bulk GaN. Journal of Crystal Growth, 310 (17). 3907-3910 doi:10.1016/j.jcrysgro.2008.06.005
Hashimoto, Tadao, Letts, Edward R., Key, Daryl, Jordan, Benjamin (2019) Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/ab06b3
Sintonen, Sakari, Suihkonen, Sami, Jussila, Henri, Lipsanen, Harri, Tuomi, Turkka O., Letts, Edward, Hoff, Sierra, Hashimoto, Tadao (2014) Defect structure of a free standing GaN wafer grown by the ammonothermal method. Journal of Crystal Growth, 406. 72-77 doi:10.1016/j.jcrysgro.2014.08.022
Pimputkar, S., Speck, J.S., Nakamura, S. (2016) Basic ammonothermal GaN growth in molybdenum capsules. Journal of Crystal Growth, 456. 15-20 doi:10.1016/j.jcrysgro.2016.07.034
 
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