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Schmidt, J., Tetzlaff, D., Bugiel, E., Wietler, T.F. (2017) Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates. Journal of Crystal Growth, 457. 171-176 doi:10.1016/j.jcrysgro.2016.06.053

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Reference TypeJournal (article/letter/editorial)
TitleSurfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates
JournalJournal of Crystal Growth
AuthorsSchmidt, J.Author
Tetzlaff, D.Author
Bugiel, E.Author
Wietler, T.F.Author
Year2017 (January)Volume457
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.06.053Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2912787Long-form Identifiermindat:1:5:2912787:0
GUID0
Full ReferenceSchmidt, J., Tetzlaff, D., Bugiel, E., Wietler, T.F. (2017) Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates. Journal of Crystal Growth, 457. 171-176 doi:10.1016/j.jcrysgro.2016.06.053
Plain TextSchmidt, J., Tetzlaff, D., Bugiel, E., Wietler, T.F. (2017) Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates. Journal of Crystal Growth, 457. 171-176 doi:10.1016/j.jcrysgro.2016.06.053
In(2017) Journal of Crystal Growth Vol. 457. Elsevier BV

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Tetzlaff, D., Wietler, T.F., Bugiel, E., Osten, H.J. (2013) Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy. Journal of Crystal Growth, 378. 254-258 doi:10.1016/j.jcrysgro.2012.12.087
Tetzlaff, D., Wietler, T. F., Bugiel, E., Osten, H. J. (2012) Carbon-mediated growth of thin, fully relaxed germanium films on silicon. Applied Physics Letters, 100 (1). 12108pp. doi:10.1063/1.3675450
Wietler, T.F., Bugiel, E., Hofmann, K.R. (2008) Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon. Applied Surface Science, 255. 778-780 doi:10.1016/j.apsusc.2008.07.030
Genath, Hannah, Schmidt, Jan, Osten, H. Jörg (2020) Analysis of thin germanium-rich SiGe layers on Si(1 1 1) substrates grown by carbon-mediated epitaxy. Journal of Crystal Growth, 535. 125569pp. doi:10.1016/j.jcrysgro.2020.125569
Wietler, T. F., Bugiel, E., Hofmann, K. R. (2005) Surfactant-mediated epitaxy of relaxed low-doped Ge films on Si(001) with low defect densities. Applied Physics Letters, 87 (18). 182102pp. doi:10.1063/1.2120900
Moellers, M., Margenfeld, C., Wietler, T.F., Osten, H.J. (2017) Growth of epitaxially stabilized, non-cubic Gd2O3 on silicon(1 1 1) substrates. Journal of Crystal Growth, 480. 141-144 doi:10.1016/j.jcrysgro.2017.10.019
Osten, H.J., Klatt, J., Lippert, G., Bugiel, E. (1993) Surfactant-mediated growth of germanium on Si(100) by MBE and SPE. Journal of Crystal Growth, 127 (1). 396-400 doi:10.1016/0022-0248(93)90647-f
Osten, H. J., Klatt, J., Lippert, G., Bugiel, E., Higuchi, S. (1993) Surfactant‐mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te. Journal of Applied Physics, 74 (4). 2507-2511 doi:10.1063/1.354690
Dixit, V.K., Keerthi, K.S., Bera, Parthasarathi, Bhat, H.L. (2002) Growth of InBixSb(1−x) films on GaAs(001) substrates using liquid phase epitaxy and their characterization. Journal of Crystal Growth, 241 (1). 171-176 doi:10.1016/s0022-0248(02)01253-8
Ito, Keita, Harada, Kazunori, Toko, Kaoru, Akinaga, Hiro, Suemasu, Takashi (2011) Epitaxial growth and magnetic characterization of ferromagnetic Co4N thin films on SrTiO3(001) substrates by molecular beam epitaxy. Journal of Crystal Growth, 336 (1). 40-43 doi:10.1016/j.jcrysgro.2011.09.038
Behrend, J., Wassermeier, M., Ploog, K.H. (1996) Virtual-surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopy. Journal of Crystal Growth, 167 (3). 440-445 doi:10.1016/0022-0248(96)00273-4
 
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