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Sawicka, M., Feduniewicz-Żmuda, A., Kryśko, M., Turski, H., Muziol, G., Siekacz, M., Wolny, P., Skierbiszewski, C. (2017) Indium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy. Journal of Crystal Growth, 459. 129-134 doi:10.1016/j.jcrysgro.2016.11.105

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Reference TypeJournal (article/letter/editorial)
TitleIndium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy
JournalJournal of Crystal Growth
AuthorsSawicka, M.Author
Feduniewicz-Żmuda, A.Author
Kryśko, M.Author
Turski, H.Author
Muziol, G.Author
Siekacz, M.Author
Wolny, P.Author
Skierbiszewski, C.Author
Year2017 (February)Volume459
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.11.105Search in ResearchGate
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Mindat Ref. ID2912995Long-form Identifiermindat:1:5:2912995:7
GUID0
Full ReferenceSawicka, M., Feduniewicz-Żmuda, A., Kryśko, M., Turski, H., Muziol, G., Siekacz, M., Wolny, P., Skierbiszewski, C. (2017) Indium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy. Journal of Crystal Growth, 459. 129-134 doi:10.1016/j.jcrysgro.2016.11.105
Plain TextSawicka, M., Feduniewicz-Żmuda, A., Kryśko, M., Turski, H., Muziol, G., Siekacz, M., Wolny, P., Skierbiszewski, C. (2017) Indium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy. Journal of Crystal Growth, 459. 129-134 doi:10.1016/j.jcrysgro.2016.11.105
In(2017) Journal of Crystal Growth Vol. 459. Elsevier BV

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Sawicka, M., Kryśko, M., Muziol, G., Turski, H., Siekacz, M., Wolny, P., Smalc-Koziorowska, J., Skierbiszewski, C. (2016) Strain relaxation in semipolar (202¯1) InGaN grown by plasma assisted molecular beam epitaxy. Journal of Applied Physics, 119 (18). 185701pp. doi:10.1063/1.4948963
Sawicka, M., Wolny, P., Kryśko, M., Turski, H., Szkudlarek, K., Grzanka, S., Skierbiszewski, C. (2017) Comparative study of semipolar(202¯1), nonpolar(101¯0)and polar(0001)InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy. Journal of Crystal Growth, 465. 43-47 doi:10.1016/j.jcrysgro.2017.02.045
Muziol, G., Siekacz, M., Turski, H., Wolny, P., Grzanka, S., Grzanka, E., Feduniewicz-Żmuda, A., Borysiuk, J., Sobczak, K., Domagała, J., Nowakowska-Siwińska, A., Makarowa, I., Perlin, P., Skierbiszewski, C. (2015) High power nitride laser diodes grown by plasma assisted molecular beam epitaxy. Journal of Crystal Growth, 425. 398-400 doi:10.1016/j.jcrysgro.2015.02.067
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