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Nakao, Setsuo, Ikeyama, Masami, Tazawa, Masato, Jin, Ping, Niwa, Hiroaki, Tanemura, Seita, Miyagawa, Yoshiko, Miyagawa, Soji, Saitoh, Kazuo (1998) High-energy co-implantation of Ti and O ions into sapphire. Materials Chemistry and Physics, 54. 342-345 doi:10.1016/s0254-0584(98)00055-8

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Reference TypeJournal (article/letter/editorial)
TitleHigh-energy co-implantation of Ti and O ions into sapphire
JournalMaterials Chemistry and Physics
AuthorsNakao, SetsuoAuthor
Ikeyama, MasamiAuthor
Tazawa, MasatoAuthor
Jin, PingAuthor
Niwa, HiroakiAuthor
Tanemura, SeitaAuthor
Miyagawa, YoshikoAuthor
Miyagawa, SojiAuthor
Saitoh, KazuoAuthor
Year1998 (July)Volume54
PublisherElsevier BV
DOIdoi:10.1016/s0254-0584(98)00055-8Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID3051366Long-form Identifiermindat:1:5:3051366:6
GUID0
Full ReferenceNakao, Setsuo, Ikeyama, Masami, Tazawa, Masato, Jin, Ping, Niwa, Hiroaki, Tanemura, Seita, Miyagawa, Yoshiko, Miyagawa, Soji, Saitoh, Kazuo (1998) High-energy co-implantation of Ti and O ions into sapphire. Materials Chemistry and Physics, 54. 342-345 doi:10.1016/s0254-0584(98)00055-8
Plain TextNakao, Setsuo, Ikeyama, Masami, Tazawa, Masato, Jin, Ping, Niwa, Hiroaki, Tanemura, Seita, Miyagawa, Yoshiko, Miyagawa, Soji, Saitoh, Kazuo (1998) High-energy co-implantation of Ti and O ions into sapphire. Materials Chemistry and Physics, 54. 342-345 doi:10.1016/s0254-0584(98)00055-8
In(1998, July) Materials Chemistry and Physics Vol. 54 (1) Elsevier BV

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Nakao, Setsuo, Saitoh, Kazuo, Ikeyama, Masami, Niwa, Hiroaki, Tanemura, Seita, Miyagawa, Yoshiko, Miyagawa, Soji, Tazawa, Masato, Jin, Ping (1998) High-energy Cu and O ion co-implantation into silica glasses. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 141 (1). 246-251 doi:10.1016/s0168-583x(98)00093-7
Nakao, Setsuo, Miyagawa, Yoshiko, Saitoh, Kazuo, Ikeyama, Masami, Niwa, Hiroaki, Tanemura, Seita, Miyagawa, Soji, Tazawa, Masato (1997) Annealing of Silica Glasses Implanted with High-Energy Copper Ions. Japanese Journal of Applied Physics, 36. 7681-7685 doi:10.1143/jjap.36.7681
Nakao, Setsuo, Saitoh, Kazuo, Ikeyama, Masami, Niwa, Hiroaki, Tanemura, Seita, Miyagawa, Yoshiko, Miyagawa, Soji (1994) Effect of High-Energy Carbon Ion Irradiation in Aligned and Random Directions on Microstructure of (111) Au Films. Japanese Journal of Applied Physics, 33. 4100-4101 doi:10.1143/jjap.33.4100
Nakao, Setsuo, Saitoh, Kazuo, Ikeyama, Masami, Niwa, Hiroaki, Tanemura, Seita, Miyagawa, Yoshiko, Miyagawa, Soji (1997) Influences of ion species (Ge+, Sb+, Au2+) on crystallization of amorphous Ge films induced by high energy ion irradiation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 127. 82-85 doi:10.1016/s0168-583x(96)00856-7
Ikeyama, Masami, Nakao, Setsuo, Niwa, Hiroaki, Miyagawa, Yoshiko, Miyagawa, Soji, Saitoh, Kazuo (2000) Electric conduction of silicon nitride induced by Si ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 169 (1). 16-20 doi:10.1016/s0168-583x(00)00009-4
Saitoh, Kazuo, Nakao, Setsuo, Niwa, Hiroaki, Ikeyama, Masami, Miyagawa, Yoshiko, Miyagawa, Soji (1992) Damage Production and Reduction of Single-Crystalline TiN Films by 1.8 MeV Carbon Beam Irradiation. Japanese Journal of Applied Physics, 31. 4020-4024 doi:10.1143/jjap.31.4020
Miyagawa, Y., Nakao, S., Ikeyama, M., Saitoh, K., Miyagawa, S. (1998) Nitride layers formed by nitrogen implantation with an energy scanning mode. Materials Chemistry and Physics, 54. 296-300 doi:10.1016/s0254-0584(98)00073-x
Miyagawa, Soji, Ikeyama, Masami, Saitoh, Kazuo, Nakao, Setsuo, Sakai, Yasuo, Miyagawa, Yoshiko (1993) Behavior of nitrogen implanted into Zr at high fluence. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80. 480-484 doi:10.1016/0168-583x(93)96165-9
Nakao, Setsuo, Miyagawa, Soji, Miyagawa, Yoshiko, Jin, Ping, Mizota, Takeshi, Niwa, Hiroaki, Saitoh, Kazuo (2000) Influences of H ion implantation on Ti:O,H,D films prepared by rf sputtering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 169 (1). 156-160 doi:10.1016/s0168-583x(00)00032-x
Saitoh, Kazuo, Niwa, Hiroaki, Nakao, Setsuo, Miyagawa, Yoshiko, Miyagawa, Soji (1996) Channeled ion assisted epitaxial growth of Ge on thin Si substrates. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 118 (1). 718-723 doi:10.1016/0168-583x(95)01109-9
Miyagawa, S., Nakao, S., Saitoh, K., Ikeyama, M., Niwa, H., Tanemura, S., Miyagawa, Y., Baba, K. (1995) Formation of β‐Si3N4by nitrogen implantation into SiC. Journal of Applied Physics, 78 (12). 7018-7021 doi:10.1063/1.360470
 
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