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Abraham, Anitha, Keerthi, K., Okram, G.S., Sharma, Vikas, Philip, Rachel Reena (2018) Preparation of n-type Copper Gallium Selenide thin films by tin doping and analysis of its structural, electrical, optical and transport properties. Materials Chemistry and Physics, 215. 56-61 doi:10.1016/j.matchemphys.2018.05.013

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Reference TypeJournal (article/letter/editorial)
TitlePreparation of n-type Copper Gallium Selenide thin films by tin doping and analysis of its structural, electrical, optical and transport properties
JournalMaterials Chemistry and Physics
AuthorsAbraham, AnithaAuthor
Keerthi, K.Author
Okram, G.S.Author
Sharma, VikasAuthor
Philip, Rachel ReenaAuthor
Year2018 (August)Volume215
PublisherElsevier BV
DOIdoi:10.1016/j.matchemphys.2018.05.013Search in ResearchGate
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Mindat Ref. ID3064578Long-form Identifiermindat:1:5:3064578:9
GUID0
Full ReferenceAbraham, Anitha, Keerthi, K., Okram, G.S., Sharma, Vikas, Philip, Rachel Reena (2018) Preparation of n-type Copper Gallium Selenide thin films by tin doping and analysis of its structural, electrical, optical and transport properties. Materials Chemistry and Physics, 215. 56-61 doi:10.1016/j.matchemphys.2018.05.013
Plain TextAbraham, Anitha, Keerthi, K., Okram, G.S., Sharma, Vikas, Philip, Rachel Reena (2018) Preparation of n-type Copper Gallium Selenide thin films by tin doping and analysis of its structural, electrical, optical and transport properties. Materials Chemistry and Physics, 215. 56-61 doi:10.1016/j.matchemphys.2018.05.013
In(2018) Materials Chemistry and Physics Vol. 215. Elsevier BV

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