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Graužinytė, Miglė, Tomerini, Daniele, Goedecker, Stefan, Flores-Livas, José A. (2019) Divalent Path to Enhance p-Type Conductivity in a SnO Transparent Semiconductor. The Journal of Physical Chemistry C, 123 (24). 14909-14913 doi:10.1021/acs.jpcc.9b02049

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Reference TypeJournal (article/letter/editorial)
TitleDivalent Path to Enhance p-Type Conductivity in a SnO Transparent Semiconductor
JournalThe Journal of Physical Chemistry C
AuthorsGraužinytė, MiglėAuthor
Tomerini, DanieleAuthor
Goedecker, StefanAuthor
Flores-Livas, José A.Author
Year2019 (June 20)Volume123
Issue24
PublisherAmerican Chemical Society (ACS)
DOIdoi:10.1021/acs.jpcc.9b02049Search in ResearchGate
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Mindat Ref. ID3932011Long-form Identifiermindat:1:5:3932011:1
GUID0
Full ReferenceGraužinytė, Miglė, Tomerini, Daniele, Goedecker, Stefan, Flores-Livas, José A. (2019) Divalent Path to Enhance p-Type Conductivity in a SnO Transparent Semiconductor. The Journal of Physical Chemistry C, 123 (24). 14909-14913 doi:10.1021/acs.jpcc.9b02049
Plain TextGraužinytė, Miglė, Tomerini, Daniele, Goedecker, Stefan, Flores-Livas, José A. (2019) Divalent Path to Enhance p-Type Conductivity in a SnO Transparent Semiconductor. The Journal of Physical Chemistry C, 123 (24). 14909-14913 doi:10.1021/acs.jpcc.9b02049
In(2019, June) The Journal of Physical Chemistry C Vol. 123 (24) American Chemical Society (ACS)

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Graužinytė, Miglė, Goedecker, Stefan, Flores-Livas, José A. (2017) Computational Screening of Useful Hole–Electron Dopants in SnO2. Chemistry of Materials, 29. 10095-10103 doi:10.1021/acs.chemmater.7b03862
Graužinytė, Miglė, Botti, Silvana, Marques, Miguel A. L., Goedecker, Stefan, Flores-Livas, José A. (2019) Computational acceleration of prospective dopant discovery in cuprous iodide. Physical Chemistry Chemical Physics, 21 (35). 18839-18849 doi:10.1039/c9cp02711d
Rucavado, Esteban, Graužinytė, Miglė, Flores-Livas, José A., Jeangros, Quentin, Landucci, Federica, Lee, Yeonbae, Koida, Takashi, Goedecker, Stefan, Hessler-Wyser, Aïcha, Ballif, Christophe, Morales-Masis, Monica (2018) New Route for “Cold-Passivation” of Defects in Tin-Based Oxides. The Journal of Physical Chemistry C, 122 (31). 17612-17620 doi:10.1021/acs.jpcc.8b02302
Flores-Livas, José A., Sanna, Antonio, Graužinytė, Miglė, Davydov, Arkadiy, Goedecker, Stefan, Marques, Miguel A. L. (2017) Emergence of superconductivity in doped H2O ice at high pressure. Scientific Reports, 7. doi:10.1038/s41598-017-07145-4
Flores-Livas, José A., Graužinytė, Miglė, Boeri, Lilia, Profeta, Gianni, Sanna, Antonio (2018) Superconductivity in doped polyethylene at high pressure. The European Physical Journal B, 91 (8). doi:10.1140/epjb/e2018-90185-6
Jensen, Stig Rune, Saha, Santanu, Flores-Livas, José A., Huhn, William, Blum, Volker, Goedecker, Stefan, Frediani, Luca (2017) The Elephant in the Room of Density Functional Theory Calculations. The Journal of Physical Chemistry Letters, 8 (7). 1449-1457 doi:10.1021/acs.jpclett.7b00255
Amsler, Maximilian, Flores-Livas, José A., Marques, Miguel A.L., Botti, Silvana, Goedecker, Stefan (2013) Prediction of a novel monoclinic carbon allotrope. The European Physical Journal B, 86 (9). doi:10.1140/epjb/e2013-40639-4
Amsler, Maximilian, Flores-Livas, José A., Huan, Tran Doan, Botti, Silvana, Marques, Miguel A. L., Goedecker, Stefan (2012) Novel Structural Motifs in Low Energy Phases ofLiAlH4. Physical Review Letters, 108 (20). doi:10.1103/physrevlett.108.205505
Botti, Silvana, Flores-Livas, José A., Amsler, Maximilian, Goedecker, Stefan, Marques, Miguel A. L. (2012) Low-energy silicon allotropes with strong absorption in the visible for photovoltaic applications. Physical Review B, 86 (12) doi:10.1103/physrevb.86.121204
Botti, Silvana, Amsler, Maximilian, Flores-Livas, José A., Ceria, Paul, Goedecker, Stefan, Marques, Miguel A. L. (2013) Carbon structures and defect planes in diamond at high pressure. Physical Review B, 88 (1) doi:10.1103/physrevb.88.014102
Sankar De, Deb, Flores-Livas, José A., Saha, Santanu, Genovese, Luigi, Goedecker, Stefan (2018) Stable structures of exohedrally decorated C60-fullerenes. Carbon, 129. 847-853 doi:10.1016/j.carbon.2017.11.086
 
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