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Meng, Lingbiao, Ni, Shuang, Zhou, Minjie, Zhang, Yingjuan, Li, Zhaoguo, Wu, Weidong (2017) Metal–semiconductor transition of two-dimensional Mg2C monolayer induced by biaxial tensile strain. Physical Chemistry Chemical Physics, 19 (47). 32086-32090 doi:10.1039/c7cp06150a

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Reference TypeJournal (article/letter/editorial)
TitleMetal–semiconductor transition of two-dimensional Mg2C monolayer induced by biaxial tensile strain
JournalPhysical Chemistry Chemical Physics
AuthorsMeng, LingbiaoAuthor
Ni, ShuangAuthor
Zhou, MinjieAuthor
Zhang, YingjuanAuthor
Li, ZhaoguoAuthor
Wu, WeidongAuthor
Year2017Volume19
Issue47
PublisherRoyal Society of Chemistry (RSC)
DOIdoi:10.1039/c7cp06150aSearch in ResearchGate
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Mindat Ref. ID4032110Long-form Identifiermindat:1:5:4032110:7
GUID0
Full ReferenceMeng, Lingbiao, Ni, Shuang, Zhou, Minjie, Zhang, Yingjuan, Li, Zhaoguo, Wu, Weidong (2017) Metal–semiconductor transition of two-dimensional Mg2C monolayer induced by biaxial tensile strain. Physical Chemistry Chemical Physics, 19 (47). 32086-32090 doi:10.1039/c7cp06150a
Plain TextMeng, Lingbiao, Ni, Shuang, Zhou, Minjie, Zhang, Yingjuan, Li, Zhaoguo, Wu, Weidong (2017) Metal–semiconductor transition of two-dimensional Mg2C monolayer induced by biaxial tensile strain. Physical Chemistry Chemical Physics, 19 (47). 32086-32090 doi:10.1039/c7cp06150a
In(2017) Physical Chemistry Chemical Physics Vol. 19 (47) Royal Society of Chemistry (RSC)

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