Reference Type | Journal (article/letter/editorial) |
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Title | Electrical resistivity of single crystalline UGe2 at high pressure and high magnetic field |
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Journal | Physica B: Condensed Matter |
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Authors | Oomi, Gendo | Author |
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Kagayama, Tomoko | Author |
Nishimura, Kazutaka | Author |
Yun, S.W. | Author |
Ōnuki, Yoshichika | Author |
Year | 1995 (February) | Volume | 206 |
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Publisher | Elsevier BV |
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DOI | doi:10.1016/0921-4526(94)00507-rSearch in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 4046567 | Long-form Identifier | mindat:1:5:4046567:8 |
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GUID | 0 |
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Full Reference | Oomi, Gendo, Kagayama, Tomoko, Nishimura, Kazutaka, Yun, S.W., Ōnuki, Yoshichika (1995) Electrical resistivity of single crystalline UGe2 at high pressure and high magnetic field. Physica B: Condensed Matter, 206. 515-518 doi:10.1016/0921-4526(94)00507-r |
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Plain Text | Oomi, Gendo, Kagayama, Tomoko, Nishimura, Kazutaka, Yun, S.W., Ōnuki, Yoshichika (1995) Electrical resistivity of single crystalline UGe2 at high pressure and high magnetic field. Physica B: Condensed Matter, 206. 515-518 doi:10.1016/0921-4526(94)00507-r |
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In | (1995) Physica B: Condensed Matter Vol. 206. Elsevier BV |
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