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Lee, Sung-Nam, Paek, H.S., Son, J.K., Sakong, T., Yoon, E., Nam, O.H., Park, Y. (2006) Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate. Physica B: Condensed Matter, 376. 532-535 doi:10.1016/j.physb.2005.12.135

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate
JournalPhysica B: Condensed Matter
AuthorsLee, Sung-NamAuthor
Paek, H.S.Author
Son, J.K.Author
Sakong, T.Author
Yoon, E.Author
Nam, O.H.Author
Park, Y.Author
Year2006 (April)Volume376
PublisherElsevier BV
DOIdoi:10.1016/j.physb.2005.12.135Search in ResearchGate
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Mindat Ref. ID4062433Long-form Identifiermindat:1:5:4062433:2
GUID0
Full ReferenceLee, Sung-Nam, Paek, H.S., Son, J.K., Sakong, T., Yoon, E., Nam, O.H., Park, Y. (2006) Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate. Physica B: Condensed Matter, 376. 532-535 doi:10.1016/j.physb.2005.12.135
Plain TextLee, Sung-Nam, Paek, H.S., Son, J.K., Sakong, T., Yoon, E., Nam, O.H., Park, Y. (2006) Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate. Physica B: Condensed Matter, 376. 532-535 doi:10.1016/j.physb.2005.12.135
In(2006) Physica B: Condensed Matter Vol. 376. Elsevier BV

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Lee, Sung-Nam, Paek, H.S., Son, J.K., Sakong, T., Nam, O.H., Park, Y. (2007) Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire. Journal of Crystal Growth, 307 (2). 358-362 doi:10.1016/j.jcrysgro.2007.07.027
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