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Pells, G.P., Hodgson, E.R. (1995) Optical and electron microscopy of sapphire irradiated with an applied electric field at 450°C. Journal of Nuclear Materials, 226 (3). 286-292 doi:10.1016/0022-3115(96)80001-8

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Reference TypeJournal (article/letter/editorial)
TitleOptical and electron microscopy of sapphire irradiated with an applied electric field at 450°C
JournalJournal of Nuclear Materials
AuthorsPells, G.P.Author
Hodgson, E.R.Author
Year1995 (November)Volume226
Issue3
PublisherElsevier BV
DOIdoi:10.1016/0022-3115(96)80001-8Search in ResearchGate
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Mindat Ref. ID4151880Long-form Identifiermindat:1:5:4151880:7
GUID0
Full ReferencePells, G.P., Hodgson, E.R. (1995) Optical and electron microscopy of sapphire irradiated with an applied electric field at 450°C. Journal of Nuclear Materials, 226 (3). 286-292 doi:10.1016/0022-3115(96)80001-8
Plain TextPells, G.P., Hodgson, E.R. (1995) Optical and electron microscopy of sapphire irradiated with an applied electric field at 450°C. Journal of Nuclear Materials, 226 (3). 286-292 doi:10.1016/0022-3115(96)80001-8
In(1995, November) Journal of Nuclear Materials Vol. 226 (3) Elsevier BV

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Pells, G.P., Sowden, B.C. (1995) The electrical conductivity of sapphire irradiated at 550–700°C with an applied electric field of 1 kV/cm. Journal of Nuclear Materials, 223 (2). 174-179 doi:10.1016/0022-3115(94)00681-4
Moroño, A., Hodgson, E.R. (2002) Oxygen interstitial trapping in electron irradiated sapphire. Journal of Nuclear Materials, 307. 1246-1249 doi:10.1016/s0022-3115(02)00977-7
Mollá, J., Ibarra, A., Heidinger, R., Hodgson, E.R. (1995) Electron-irradiated silicon: An optimized material for gyrotron windows. Journal of Nuclear Materials, 218 (2). 108-112 doi:10.1016/0022-3115(94)00519-2
Moroño, A., Hodgson, E.R. (1995) Radioluminescence problems for diagnostic windows. Journal of Nuclear Materials, 224 (3). 216-221 doi:10.1016/0022-3115(95)00082-8
Moroño, A., Hodgson, E.R. (1998) Radiation induced optical absorption and radioluminescence in electron irradiated SiO2. Journal of Nuclear Materials, 258. 1889-1892 doi:10.1016/s0022-3115(98)00350-x
Zinkle, S.J, Pells, G.P (1998) Microstructure of Al2O3 and MgAl2O4 irradiated at low temperatures. Journal of Nuclear Materials, 253 (1). 120-132 doi:10.1016/s0022-3115(97)00323-1
Mollá, J., Ibarra, A., Hodgson, E.R. (1995) In-beam dielectric properties of alumina. Journal of Nuclear Materials, 219. 182-189 doi:10.1016/0022-3115(94)00533-8
Moroño, A., Hodgson, E.R., González de Vicente, S.M. (2009) Electrical surface degradation of electron irradiated sapphire and silica. Journal of Nuclear Materials, 386. 1002-1005 doi:10.1016/j.jnucmat.2008.12.199
Pells, G.P. (1991) Radiation-induced electrical conductivity in MgAl2O4 spinel. Journal of Nuclear Materials, 184 (3). 183-190 doi:10.1016/0022-3115(91)90539-j
Rau, Robert C. (1964) Electron microscopy of irradiated BeO. Journal of Nuclear Materials, 11 (3). 320-332 doi:10.1016/0022-3115(64)90023-6
Pells, G.P. (1984) Ceramic materials for fusion reactor applications. Journal of Nuclear Materials, 123 (1). 1338-1351 doi:10.1016/0022-3115(84)90264-2
 
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