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Cichoň, Stanislav, Macháč, Petr, Fekete, Ladislav, Lapčák, Ladislav (2016) Direct microwave annealing of SiC substrate for rapid synthesis of quality epitaxial graphene. Carbon, 98. 441-448 doi:10.1016/j.carbon.2015.11.023

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Reference TypeJournal (article/letter/editorial)
TitleDirect microwave annealing of SiC substrate for rapid synthesis of quality epitaxial graphene
JournalCarbon
AuthorsCichoň, StanislavAuthor
Macháč, PetrAuthor
Fekete, LadislavAuthor
Lapčák, LadislavAuthor
Year2016 (March)Volume98
PublisherElsevier BV
DOIdoi:10.1016/j.carbon.2015.11.023Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID4265287Long-form Identifiermindat:1:5:4265287:0
GUID0
Full ReferenceCichoň, Stanislav, Macháč, Petr, Fekete, Ladislav, Lapčák, Ladislav (2016) Direct microwave annealing of SiC substrate for rapid synthesis of quality epitaxial graphene. Carbon, 98. 441-448 doi:10.1016/j.carbon.2015.11.023
Plain TextCichoň, Stanislav, Macháč, Petr, Fekete, Ladislav, Lapčák, Ladislav (2016) Direct microwave annealing of SiC substrate for rapid synthesis of quality epitaxial graphene. Carbon, 98. 441-448 doi:10.1016/j.carbon.2015.11.023
In(2016) Carbon Vol. 98. Elsevier BV

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