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Huang, Yingnan, Liu, Jianxun, Sun, Xiujian, Zhan, Xiaoning, Sun, Qian, Gao, Hongwei, Feng, Meixin, Zhou, Yu, Ikeda, Masao, Yang, Hui (2020) Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer. CrystEngComm, 22. 1160-1165 doi:10.1039/c9ce01677e

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Reference TypeJournal (article/letter/editorial)
TitleCrack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer
JournalCrystEngComm
AuthorsHuang, YingnanAuthor
Liu, JianxunAuthor
Sun, XiujianAuthor
Zhan, XiaoningAuthor
Sun, QianAuthor
Gao, HongweiAuthor
Feng, MeixinAuthor
Zhou, YuAuthor
Ikeda, MasaoAuthor
Yang, HuiAuthor
Year2020Volume22
PublisherRoyal Society of Chemistry (RSC)
DOIdoi:10.1039/c9ce01677eSearch in ResearchGate
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Mindat Ref. ID4455384Long-form Identifiermindat:1:5:4455384:7
GUID0
Full ReferenceHuang, Yingnan, Liu, Jianxun, Sun, Xiujian, Zhan, Xiaoning, Sun, Qian, Gao, Hongwei, Feng, Meixin, Zhou, Yu, Ikeda, Masao, Yang, Hui (2020) Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer. CrystEngComm, 22. 1160-1165 doi:10.1039/c9ce01677e
Plain TextHuang, Yingnan, Liu, Jianxun, Sun, Xiujian, Zhan, Xiaoning, Sun, Qian, Gao, Hongwei, Feng, Meixin, Zhou, Yu, Ikeda, Masao, Yang, Hui (2020) Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer. CrystEngComm, 22. 1160-1165 doi:10.1039/c9ce01677e
In(2020) CrystEngComm Vol. 22. Royal Society of Chemistry (RSC)

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Liu, Jianxun, Huang, Yingnan, Sun, Xiujian, Zhan, Xiaoning, Sun, Qian, Gao, Hongwei, Feng, Meixin, Zhou, Yu, Ikeda, Masao, Yang, Hui (2019) Wafer-scale crack-free 10 µm-thick GaN with a dislocation density of 5.8  ×  107 cm−2 grown on Si. Journal of Physics D: Applied Physics, 52. 425102pp. doi:10.1088/1361-6463/ab3364
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