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Finch, R. H., Queisser, H. J., Thomas, G., Washburn, J. (1963) Erratum: Structure and Origin of Stacking Faults in Epitaxial Silicon. Journal of Applied Physics, 34 (10). 3153-3154 doi:10.1063/1.1729152

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Reference TypeJournal (article/letter/editorial)
TitleErratum: Structure and Origin of Stacking Faults in Epitaxial Silicon
JournalJournal of Applied Physics
AuthorsFinch, R. H.Author
Queisser, H. J.Author
Thomas, G.Author
Washburn, J.Author
Year1963 (October)Volume34
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.1729152Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID4927187Long-form Identifiermindat:1:5:4927187:8
GUID0
Full ReferenceFinch, R. H., Queisser, H. J., Thomas, G., Washburn, J. (1963) Erratum: Structure and Origin of Stacking Faults in Epitaxial Silicon. Journal of Applied Physics, 34 (10). 3153-3154 doi:10.1063/1.1729152
Plain TextFinch, R. H., Queisser, H. J., Thomas, G., Washburn, J. (1963) Erratum: Structure and Origin of Stacking Faults in Epitaxial Silicon. Journal of Applied Physics, 34 (10). 3153-3154 doi:10.1063/1.1729152
In(1963, October) Journal of Applied Physics Vol. 34 (10) AIP Publishing

See Also

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Finch, R. H., Queisser, H. J., Thomas, G., Washburn, J. (1963) Structure and Origin of Stacking Faults in Epitaxial Silicon. Journal of Applied Physics, 34 (2). 406-415 doi:10.1063/1.1702622
Queisser, H. J., Finch, R. H., Washburn, J. (1962) Stacking Faults in Epitaxial Silicon. Journal of Applied Physics, 33 (4). 1536-1537 doi:10.1063/1.1728767
Washburn, J., Thomas, G., Queisser, H. J. (1963) EXTRINSIC‐INTRINSIC STACKING‐FAULT PAIRS IN EPITAXIAL SILICON. Applied Physics Letters, 3 (3). 44-45 doi:10.1063/1.1723567
Washburn, J., Thomas, G., Queisser, H. J. (1964) Diffusion‐Induced Dislocations in Silicon. Journal of Applied Physics, 35 (6). 1909-1914 doi:10.1063/1.1713768
Jaccodine, R. J. (1963) STACKING FAULTS IN EPITAXIAL MATERIAL. Applied Physics Letters, 2 (11). 201-202 doi:10.1063/1.1753733
Dudley, R. H. (1964) Nondestructive Method for Revealing Stacking Faults in Epitaxial Silicon. Journal of Applied Physics, 35 (4). 1360-1361 doi:10.1063/1.1713630
Strudel, J. L., Vincotte, F., Washburn, J. (1963) STACKING FAULTS IN QUENCHED ALUMINUM. Applied Physics Letters, 3 (9). 148-149 doi:10.1063/1.1753907
Schwuttke, G. H., Sils, V. (1963) Erratum: X‐Ray Analysis of Stacking Fault Structures in Epitaxially Grown Silicon. Journal of Applied Physics, 34 (11). 3420 doi:10.1063/1.1729219
Sundahl, R. C., Sivertsen, J. M. (1963) Stacking Faults in Silver‐Lithium Alloys. Journal of Applied Physics, 34 (4). 994-995 doi:10.1063/1.1729581
Schwuttke, G. H., Sils, V. (1963) X‐Ray Analysis of Stacking Fault Structures in Epitaxially Grown Silicon. Journal of Applied Physics, 34 (10). 3127-3134 doi:10.1063/1.1729133
Cook, W. R., Berlincourt, D. A., Scholz, F. J. (1963) Erratum: Thermal Expansion and Pyroelectricity in Lead Titanate Zirconate and Barium Titanate. Journal of Applied Physics, 34 (10). 3154 doi:10.1063/1.1729153
 
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