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Kim, Choong‐Ki, Lenzlinger, Martin (1971) Charge Transfer in Charge‐Coupled Devices. Journal of Applied Physics, 42 (9). 3586-3594 doi:10.1063/1.1660774

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Reference TypeJournal (article/letter/editorial)
TitleCharge Transfer in Charge‐Coupled Devices
JournalJournal of Applied Physics
AuthorsKim, Choong‐KiAuthor
Lenzlinger, MartinAuthor
Year1971 (August)Volume42
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.1660774Search in ResearchGate
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Mindat Ref. ID4969835Long-form Identifiermindat:1:5:4969835:8
GUID0
Full ReferenceKim, Choong‐Ki, Lenzlinger, Martin (1971) Charge Transfer in Charge‐Coupled Devices. Journal of Applied Physics, 42 (9). 3586-3594 doi:10.1063/1.1660774
Plain TextKim, Choong‐Ki, Lenzlinger, Martin (1971) Charge Transfer in Charge‐Coupled Devices. Journal of Applied Physics, 42 (9). 3586-3594 doi:10.1063/1.1660774
In(1971, August) Journal of Applied Physics Vol. 42 (9) AIP Publishing

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Kim, Choong‐Ki, Snow, E. H. (1972) p‐Channel Charge‐Coupled Devices with Resistive Gate Structure. Applied Physics Letters, 20 (12). 514-516 doi:10.1063/1.1654040
Chen, Q., Blasingame, M., Faber, C. (1998) Charge transfer in charge-coupled devices fabricated on AlGaN/GaN heterostructures. Applied Physics Letters, 73 (10). 1403-1405 doi:10.1063/1.121957
Fawcett, W, Vanstone, G F (1976) Two-dimensional simulation of the charge transfer process in charge-coupled devices using a particle model. Journal of Physics D: Applied Physics, 9. 1937 doi:10.1088/0022-3727/9/13/514
Fawcett, W, Vanstone, G F (1976) Two-dimensional simulation of the charge transfer process in charge-coupled devices using a particle model. Journal of Physics D: Applied Physics, 9. 773-778 doi:10.1088/0022-3727/9/5/010
Takeuchi, Yuusuke, Uchida, Yasutaka, Matsumura, Masakiyo (1985) Theory of Charge Transfer in Amorphous-Silicon Charge-Coupled Devices. Japanese Journal of Applied Physics, 24. 1056-1060 doi:10.1143/jjap.24.1056
Song, J. I., Fossum, E. R. (1987) Inhibition of charge packet broadening in GaAs charge‐coupled devices. Applied Physics Letters, 51 (19). 1539-1541 doi:10.1063/1.98628
Frohman‐Bentchkowsky, D., Lenzlinger, M. (1969) Charge Transport and Storage in Metal‐Nitride‐Oxide‐Silicon (MNOS) Structures. Journal of Applied Physics, 40 (8). 3307-3319 doi:10.1063/1.1658181
Kim, M. E., Taur, Y., Shin, S. H., Bostrup, G., Kim, J. C., Cheung, D. T. (1981) Charge‐coupled devices in epitaxial HgCdTe/CdTe heterostructure. Applied Physics Letters, 39 (4). 336-338 doi:10.1063/1.92713
Perlman, Martin M., Creswell, Robert A. (1971) Thermal Current Study of the Effect of Humidity on Charge Storage in Mylar. Journal of Applied Physics, 42 (2). 531-533 doi:10.1063/1.1660057
Mayer, G. J. (1979) Observation of thermal carrier generation in buried channel charge coupled devices. Journal of Applied Physics, 50 (1). 546-547 doi:10.1063/1.325650
Fujiwara, Akira, Zimmerman, Neil M., Ono, Yukinori, Takahashi, Yasuo (2004) Current quantization due to single-electron transfer in Si-wire charge-coupled devices. Applied Physics Letters, 84 (8). 1323-1325 doi:10.1063/1.1650036
 
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