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Pruniaux, B. R., Adams, A. C. (1972) Dependence of Barrier Height of Metal Semiconductor Contact (Au–GaAs) on Thickness of Semiconductor Surface Layer. Journal of Applied Physics, 43 (4). 1980-1982 doi:10.1063/1.1661426

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Reference TypeJournal (article/letter/editorial)
TitleDependence of Barrier Height of Metal Semiconductor Contact (Au–GaAs) on Thickness of Semiconductor Surface Layer
JournalJournal of Applied Physics
AuthorsPruniaux, B. R.Author
Adams, A. C.Author
Year1972 (April)Volume43
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.1661426Search in ResearchGate
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Mindat Ref. ID4972479Long-form Identifiermindat:1:5:4972479:6
GUID0
Full ReferencePruniaux, B. R., Adams, A. C. (1972) Dependence of Barrier Height of Metal Semiconductor Contact (Au–GaAs) on Thickness of Semiconductor Surface Layer. Journal of Applied Physics, 43 (4). 1980-1982 doi:10.1063/1.1661426
Plain TextPruniaux, B. R., Adams, A. C. (1972) Dependence of Barrier Height of Metal Semiconductor Contact (Au–GaAs) on Thickness of Semiconductor Surface Layer. Journal of Applied Physics, 43 (4). 1980-1982 doi:10.1063/1.1661426
In(1972, April) Journal of Applied Physics Vol. 43 (4) AIP Publishing

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Wei, C. H., Yee, S. S. (1974) Comments on ``Dependence of barrier height of metal‐semiconductor contact (Au–GaAs) on thickness of semiconductor surface layer''. Journal of Applied Physics, 45 (2). 971 doi:10.1063/1.1663356
Arora, B. M., Srivastava, A. K., Guha, S. (1982) On the measurement of barrier height in metal‐insulator‐semiconductor (GaAs) structures by internal photoemission technique. Journal of Applied Physics, 53 (3). 1820-1822 doi:10.1063/1.330596
Smith, S. R., Evwaraye, A. O., Mitchel, W. C. (1996) Temperature dependence of the barrier height of metal‐semiconductor contacts on 6H‐SiC. Journal of Applied Physics, 79 (1). 301-304 doi:10.1063/1.360944
Smith, S. R., Evwaraye, A. O., Mitchel, W. C. (1996) Reply to ‘‘Comment on ‘Temperature dependence of the barrier height of metal‐semiconductor contacts on 6H‐SiC’ ’’. Journal of Applied Physics, 80 (11). 6572-6573 doi:10.1063/1.363644
Spitzer, W. G., Mead, C. A. (1963) Barrier Height Studies on Metal‐Semiconductor Systems. Journal of Applied Physics, 34 (10). 3061-3069 doi:10.1063/1.1729121
Pruniaux, B. R. (1971) Transport Properties of the Gold Germanium Gallium Arsenide Metal Semiconductor System. Journal of Applied Physics, 42 (9). 3575-3577 doi:10.1063/1.1660772
Forrest, S. R., Kaplan, M. L., Schmidt, P. H. (1984) Organic‐on‐inorganic semiconductor contact barrier diodes. II. Dependence on organic film and metal contact properties. Journal of Applied Physics, 56 (2). 543-551 doi:10.1063/1.333944
Fröjdh, C., Petersson, C. S. (1996) Comment on ‘‘Temperature dependence of the barrier height of metal–semiconductor contacts on 6H‐SiC’’ [J. Appl. Phys.79, 301 (1996)]. Journal of Applied Physics, 80 (11). 6570-6571 doi:10.1063/1.363643
Guinet, C. (1974) New method of determination of a metal‐semiconductor barrier height. Applied Physics Letters, 25 (10). 600-602 doi:10.1063/1.1655327
Cowley, A. M., Sze, S. M. (1965) Surface States and Barrier Height of Metal‐Semiconductor Systems. Journal of Applied Physics, 36 (10). 3212-3220 doi:10.1063/1.1702952
Goodman, Alvin M. (1965) Metal‐Semiconductor Barrier Height Measurement by the Differential Capacitance Method without an Ohmic Reference Contact—One‐Carrier System. Journal of Applied Physics, 36 (4). 1411-1414 doi:10.1063/1.1714320
 
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