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Okuno, Yasuo, Suto, Ken, Nishizawa, Jun‐ichi (1973) Deep levels in GaP. Journal of Applied Physics, 44 (2). 832-836 doi:10.1063/1.1662267

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Reference TypeJournal (article/letter/editorial)
TitleDeep levels in GaP
JournalJournal of Applied Physics
AuthorsOkuno, YasuoAuthor
Suto, KenAuthor
Nishizawa, Jun‐ichiAuthor
Year1973 (February)Volume44
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.1662267Search in ResearchGate
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Mindat Ref. ID4975892Long-form Identifiermindat:1:5:4975892:4
GUID0
Full ReferenceOkuno, Yasuo, Suto, Ken, Nishizawa, Jun‐ichi (1973) Deep levels in GaP. Journal of Applied Physics, 44 (2). 832-836 doi:10.1063/1.1662267
Plain TextOkuno, Yasuo, Suto, Ken, Nishizawa, Jun‐ichi (1973) Deep levels in GaP. Journal of Applied Physics, 44 (2). 832-836 doi:10.1063/1.1662267
In(1973, February) Journal of Applied Physics Vol. 44 (2) AIP Publishing

See Also

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Okuno, Yasuo, Suto, Ken, Nishizawa, Jun-ichi (1975) Luminescence from Diffused In1-xGaxPp-nJunctions. Japanese Journal of Applied Physics, 14 (2) 231-239 doi:10.1143/jjap.14.231
Okuno, Yasuo, Suto, Ken, Nishizawa, Jun-ichi (1971) Growth of In1-xGaxP Crystals from Solution. Japanese Journal of Applied Physics, 10 (3) 388 doi:10.1143/jjap.10.388
Okuno, Yasuo, Suto, Ken, Nishizawa, Jun-ichi (1972) Bright Yellow Luminescence from In1-xGaxPp-nJunctions. Japanese Journal of Applied Physics, 11 (5) 757 doi:10.1143/jjap.11.757
Nishizawa, Jun-ichi, Kim, Kiyoon, Oyama, Yutaka, Suto, Ken (1997) Stoichiometry-dependent deep levels in p-type InP. Journal of Applied Physics, 81 (7). 3151-3154 doi:10.1063/1.364349
Suto, Ken, Nishizawa, Jun‐ichi (1990) Radiative recombination mechanisms in stoichiometry‐controlled GaP crystals. Journal of Applied Physics, 67 (1). 459-464 doi:10.1063/1.345225
Nishizawa, Jun-ichi, Koike, Masayoshi, Miura, Kaichi, Okuno, Yasuo (1980) Deep Levels Studies of N-Free and N-Doped GaP Grown by TDM-CVP. Japanese Journal of Applied Physics, 19 (1) 25-30 doi:10.1143/jjap.19.25
Suto, Ken, Nishizawa, Jun‐ichi (1972) Paramagnetic Resonance and Hall Coefficients in Fe‐Doped n‐Type GaP. Journal of Applied Physics, 43 (5). 2247-2250 doi:10.1063/1.1661484
Saito, Takao, Suto, Ken, Nishizawa, Jun-ichi, Kawasaki, Masaki (2001) Spontaneous Raman scattering in [100], [110], and [11-2] directional GaP waveguides. Journal of Applied Physics, 90 (4). 1831-1835 doi:10.1063/1.1340597
Nishizawa, Jun‐ichi, Oyama, Yutaka, Suto, Ken, Kim, Kiyoon (1996) Stoichiometry‐dependent deep levels inn‐type InP prepared by annealing under controlled phosphorus vapor pressure. Journal of Applied Physics, 80 (3). 1488-1492 doi:10.1063/1.362986
Saito, Takao, Suto, Ken, Kimura, Tomoyuki, Watanabe, Akiyoshi, Nishizawa, Jun-ichi (2000) Raman gain and optical loss in GaP–AlGaP waveguides. Journal of Applied Physics, 87 (7). 3399-3403 doi:10.1063/1.372357
Murai, Akihiko, Nishizawa, Jun-ichi, Oyama, Yutaka, Suto, Ken, Chubachi, Noriyoshi (1996) Effect of stoichiometry on the dominant deep levels in liquid phase epitaxially grown n-type Al0.3Ga0.7As doped with Te. Journal of Applied Physics, 79 (8). 3930pp. doi:10.1063/1.361880
 
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