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van Gurp, G. J. (1975) Resistivity, grain size, and structure of vacuum‐deposited Co films. Journal of Applied Physics, 46 (5). 1922-1927 doi:10.1063/1.321890

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Reference TypeJournal (article/letter/editorial)
TitleResistivity, grain size, and structure of vacuum‐deposited Co films
JournalJournal of Applied Physics
Authorsvan Gurp, G. J.Author
Year1975 (May)Volume46
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.321890Search in ResearchGate
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Mindat Ref. ID4985483Long-form Identifiermindat:1:5:4985483:9
GUID0
Full Referencevan Gurp, G. J. (1975) Resistivity, grain size, and structure of vacuum‐deposited Co films. Journal of Applied Physics, 46 (5). 1922-1927 doi:10.1063/1.321890
Plain Textvan Gurp, G. J. (1975) Resistivity, grain size, and structure of vacuum‐deposited Co films. Journal of Applied Physics, 46 (5). 1922-1927 doi:10.1063/1.321890
In(1975, May) Journal of Applied Physics Vol. 46 (5) AIP Publishing

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van Gurp, G. J. (1975) Cobalt silicide layers on Si. II. Schottky barrier height and contact resistivity. Journal of Applied Physics, 46 (10). 4308-4311 doi:10.1063/1.321452
van Gurp, G. J., Langereis, C. (1975) Cobalt silicide layers on Si. I. Structure and growth. Journal of Applied Physics, 46 (10). 4301-4307 doi:10.1063/1.321451
Learn, Arthur J., Foster, Derrick W. (1985) Resistivity, grain size, and impurity effects in chemically vapor‐deposited tungsten films. Journal of Applied Physics, 58 (5). 2001-2007 doi:10.1063/1.336010
van Gurp, G. J. (1973) Diffusion‐limited Si precipitation in evaporated Al/Si films. Journal of Applied Physics, 44 (5). 2040-2050 doi:10.1063/1.1662511
Lim, J.-W., Isshiki, M. (2006) Electrical resistivity of Cu films deposited by ion beam deposition: Effects of grain size, impurities, and morphological defect. Journal of Applied Physics, 99 (9). 94909pp. doi:10.1063/1.2194247
van Opdorp, C., Verkerk, M. J. (1988) Stress distribution in released vacuum‐deposited aluminum films. Journal of Applied Physics, 63 (5). 1518-1525 doi:10.1063/1.339935
van Gurp, G. J. (1971) Electromigration in Al Films Containing Si. Applied Physics Letters, 19 (11). 476-478 doi:10.1063/1.1653779
van Gurp, G. J., de Waard, P. J., du Chatenier, F. J. (1985) Thermomigration in indium and indium alloy films. Journal of Applied Physics, 58 (2). 728-735 doi:10.1063/1.336190
Howard, J. K. (1975) Grain‐boundary electrotransport of liquid zones in thin metal films. Journal of Applied Physics, 46 (5). 1910-1918 doi:10.1063/1.321888
Lai, J. B., Chen, L. J. (2000) Phase formation and electrical resistivity of ultrahigh vacuum deposited Cu thin films on epitaxial Si–Ge layers on Si and Ge. Journal of Applied Physics, 87 (5). 2237-2244 doi:10.1063/1.372167
Takahashi, Masaru, Onishi, Hideomi, Tada, Osamu (1971) Resistivity and Density of Ge Films Obliquely Deposited in Vacuum. Journal of Applied Physics, 42 (2). 833-836 doi:10.1063/1.1660101
 
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