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Rose, B. H., Barnes, C. E. (1982) Proton damage effects on light emitting diodes. Journal of Applied Physics, 53 (3). 1772-1780 doi:10.1063/1.331649

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Reference TypeJournal (article/letter/editorial)
TitleProton damage effects on light emitting diodes
JournalJournal of Applied Physics
AuthorsRose, B. H.Author
Barnes, C. E.Author
Year1982 (March)Volume53
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.331649Search in ResearchGate
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Mindat Ref. ID5014643Long-form Identifiermindat:1:5:5014643:5
GUID0
Full ReferenceRose, B. H., Barnes, C. E. (1982) Proton damage effects on light emitting diodes. Journal of Applied Physics, 53 (3). 1772-1780 doi:10.1063/1.331649
Plain TextRose, B. H., Barnes, C. E. (1982) Proton damage effects on light emitting diodes. Journal of Applied Physics, 53 (3). 1772-1780 doi:10.1063/1.331649
In(1982, March) Journal of Applied Physics Vol. 53 (3) AIP Publishing

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Barnes, C. E. (1972) Neutron Damage in GaP Light‐Emitting Diodes. Applied Physics Letters, 20 (3). 110-112 doi:10.1063/1.1654068
Barnes, C. E. (1972) Neutron Damage in SiC Light‐Emitting Diodes. Applied Physics Letters, 20 (2). 86-88 doi:10.1063/1.1654059
Barnes, C. E. (1977) Neutron damage in GaP : Zn,O light‐emitting diodes. Journal of Applied Physics, 48 (5). 1921-1927 doi:10.1063/1.323949
Smith, L. H., Wasey, J. A. E., Barnes, W. L. (2004) Light outcoupling efficiency of top-emitting organic light-emitting diodes. Applied Physics Letters, 84 (16). 2986-2988 doi:10.1063/1.1712036
Zipfel, C. L., Saul, R. H., Chin, A. K., Keramidas, V. G. (1982) Competing processes in long term accelerated aging of double heterostructure Ga1−xAlxAs light emitting diodes. Journal of Applied Physics, 53 (3). 1781-1786 doi:10.1063/1.330638
Hoffmann, L., Ziegler, G., Theis, D., Weyrich, C. (1982) Silicon carbide blue light emitting diodes with improved external quantum efficiency. Journal of Applied Physics, 53 (10). 6962-6967 doi:10.1063/1.330041
Barnes, C. E. (1971) Neutron Damage in Epitaxial GaAs Laser Diodes. Journal of Applied Physics, 42 (5). 1941-1949 doi:10.1063/1.1660470
Nishizawa, J., Jin, C. C., Suto, K., Koike, M. (1982) Luminescence study of a deep level in N‐free GaP light‐emitting diodes. Journal of Applied Physics, 53 (8). 5876-5881 doi:10.1063/1.331428
Hahn, Y. B., Choi, R. J., Hong, J. H., Park, H. J., Choi, C. S., Lee, H. J. (2002) High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light-emitting diodes. Journal of Applied Physics, 92 (3). 1189-1194 doi:10.1063/1.1491585
Ueda, Osamu, Yamakoshi, Shigenobu, Sanada, Tatsuyuki, Umebu, Itsuo, Kotani, Tsuyoshi, Hasegawa, Osamu (1982) Mechanism of catastrophic degradation in InGaAsP/InP double‐heterostructure light emitting diodes and GaAlAs double‐heterostructure light emitting diodes applied with pulsed large current. Journal of Applied Physics, 53 (12). 9170-9179 doi:10.1063/1.330429
Sato, Tadashige, Imai, Megumi (2002) Effects of nitrogen on GaAsP light-emitting diodes. Journal of Applied Physics, 91 (10). 6266pp. doi:10.1063/1.1469664
 
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