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Berti, M., Drigo, A. V., Cohen, C., Siejka, J., Bentini, G. G., Nipoti, R., Guerri, S. (1984) Titanium silicide formation: Effect of oxygen distribution in the metal film. Journal of Applied Physics, 55 (10). 3558-3565 doi:10.1063/1.332946

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Reference TypeJournal (article/letter/editorial)
TitleTitanium silicide formation: Effect of oxygen distribution in the metal film
JournalJournal of Applied Physics
AuthorsBerti, M.Author
Drigo, A. V.Author
Cohen, C.Author
Siejka, J.Author
Bentini, G. G.Author
Nipoti, R.Author
Guerri, S.Author
Year1984 (May 15)Volume55
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.332946Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5018652Long-form Identifiermindat:1:5:5018652:1
GUID0
Full ReferenceBerti, M., Drigo, A. V., Cohen, C., Siejka, J., Bentini, G. G., Nipoti, R., Guerri, S. (1984) Titanium silicide formation: Effect of oxygen distribution in the metal film. Journal of Applied Physics, 55 (10). 3558-3565 doi:10.1063/1.332946
Plain TextBerti, M., Drigo, A. V., Cohen, C., Siejka, J., Bentini, G. G., Nipoti, R., Guerri, S. (1984) Titanium silicide formation: Effect of oxygen distribution in the metal film. Journal of Applied Physics, 55 (10). 3558-3565 doi:10.1063/1.332946
In(1984, May) Journal of Applied Physics Vol. 55 (10) AIP Publishing

See Also

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Cohen, C., Nipoti, R., Siejka, J., Bentini, G. G., Berti, M., Drigo, A. V. (1987) Silicon loss during TiSi2formation. Journal of Applied Physics, 61 (11). 5187-5189 doi:10.1063/1.338297
Bentini, G. G., Nipoti, R., Armigliato, A., Berti, M., Drigo, A. V., Cohen, C. (1985) Growth and structure of titanium silicide phases formed by thin Ti films on Si crystals. Journal of Applied Physics, 57 (2). 270-275 doi:10.1063/1.334799
Bentini, G. G., Servidori, M., Cohen, C., Nipoti, R., Drigo, A. V. (1982) Titanium and nickel silicide formation afterQ‐switched laser and multiscanning electron beam irradiation. Journal of Applied Physics, 53 (3). 1525-1531 doi:10.1063/1.330651
Cohen, C., Siejka, J., Berti, M., Drigo, A. V., Bentini, G. G., Pribat, D., Jannitti, E. (1984) Pulsed laser irradiation of GaAs under oxygen and silane atmosphere: Incorporation, losses, influence of native oxide. Journal of Applied Physics, 55 (11). 4081-4087 doi:10.1063/1.332998
Bentini, G. G., Nipoti, R., Berti, M., Drigo, A. V., Cohen, C. (1985) Transient annealing as a tool for the investigation of thin‐film–substrate solid‐phase reactions. Journal of Applied Physics, 58 (3). 1234-1239 doi:10.1063/1.336142
Berti, M., DonĂĄ dalle Rose, L. F., Drigo, A. V., Cohen, C., Siejka, J., Bentini, G. G., Jannitti, E. (1986) Matrix atomic losses and oxygen incorporation under ruby-laser irradiation of silicon in gaseous atmospheres. Physical Review B, 34 (4) 2346-2359 doi:10.1103/physrevb.34.2346
Bentini, G. G., Cohen, C., Desalvo, A., Drigo, A. V. (1981) Laser Annealing of Damaged Silicon Covered with a Metal Film: Test for Epitaxial Growth from the Melt. Physical Review Letters, 46 (2). 156-159 doi:10.1103/physrevlett.46.156
Lulli, G., Merli, P. G., Rizzoli, R., Berti, M., Drigo, A. V. (1989) Anomalous distribution of As during implantation in silicon under self‐annealing conditions. Journal of Applied Physics, 66 (7). 2940-2946 doi:10.1063/1.344174
Bentini, G. G., DeSalvo, A., Cohen, C., Drigo, A. V. (1981) Bentiniet al.Respond. Physical Review Letters, 47 (4). 284 doi:10.1103/physrevlett.47.284
BENTINI, G. G., BERTI, M., CARNERA, A., DELLA MEA, G., DRIGO, A. V., LO RUSSO, S., MAZZOLDI, P., DEARNALEY, G. (1980) ChemInform Abstract: THE THERMAL OXIDATION OF ION-IMPLANTED ZIRCONIUM. Chemischer Informationsdienst, 11 (19) doi:10.1002/chin.198019026
Pribat, D., Dieumegard, D., Croset, M., Cohen, C., Nipoti, R., Siejka, J., Bentini, G.G., Correra, L., Servidori, M. (1983) Ion implantation of silicon in gallium arsenide: Damage and annealing characterizations. Nuclear Instruments and Methods in Physics Research, 209. 737-742 doi:10.1016/0167-5087(83)90876-1
 
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