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Pennycook, S. J., Narayan, J., Holland, O. W. (1984) Point defect trapping in solid‐phase epitaxially grown silicon‐antimony alloys. Journal of Applied Physics, 55 (4). 837-840 doi:10.1063/1.333179

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Reference TypeJournal (article/letter/editorial)
TitlePoint defect trapping in solid‐phase epitaxially grown silicon‐antimony alloys
JournalJournal of Applied Physics
AuthorsPennycook, S. J.Author
Narayan, J.Author
Holland, O. W.Author
Year1984 (February 15)Volume55
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.333179Search in ResearchGate
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Mindat Ref. ID5019162Long-form Identifiermindat:1:5:5019162:0
GUID0
Full ReferencePennycook, S. J., Narayan, J., Holland, O. W. (1984) Point defect trapping in solid‐phase epitaxially grown silicon‐antimony alloys. Journal of Applied Physics, 55 (4). 837-840 doi:10.1063/1.333179
Plain TextPennycook, S. J., Narayan, J., Holland, O. W. (1984) Point defect trapping in solid‐phase epitaxially grown silicon‐antimony alloys. Journal of Applied Physics, 55 (4). 837-840 doi:10.1063/1.333179
In(1984, February) Journal of Applied Physics Vol. 55 (4) AIP Publishing

See Also

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Pennycook, S. J., Narayan, J., Holland, O. W. (1983) Formation of partially coherent antimony precipitates in ion implanted thermally annealed silicon. Journal of Applied Physics, 54 (12). 6875-6878 doi:10.1063/1.331992
Pennycook, S.J., Narayan, J., Holland, O.W. (1984) Enhanced diffusion from interstitial trapping during solid-phase-epitaxial growth of silicon alloys. Journal of Crystal Growth, 70 (1). 597-601 doi:10.1016/0022-0248(84)90321-x
Pennycook, S. J., Narayan, J., Holland, O. W. (1984) Spatially resolved measurement of substitutional dopant concentrations in semiconductors. Applied Physics Letters, 44 (5). 547-549 doi:10.1063/1.94833
Narayan, J., Holland, O. W., White, C. W., Young, R. T. (1984) Excimer laser annealing of ion‐implanted silicon. Journal of Applied Physics, 55 (4). 1125-1130 doi:10.1063/1.333204
Narayan, J., Holland, O. W. (1982) Formation of metastable supersaturated solid solutions in ion implanted silicon during solid phase crystallization. Applied Physics Letters, 41 (3). 239-242 doi:10.1063/1.93480
Feldman, Bernard J., Bajaj, J., Shin, S. H. (1984) Photoluminescence in liquid phase epitaxially grown Hg0.3Cd0.7Te. Journal of Applied Physics, 55 (10). 3873-3875 doi:10.1063/1.332902
Narayan, J., White, C. W., Holland, O. W., Aziz, M. J. (1984) Phase transformation and impurity redistribution during pulsed laser irradiation of amorphous silicon layers. Journal of Applied Physics, 56 (6). 1821-1830 doi:10.1063/1.334192
Pennycook, S. J., Narayan, J. (1984) Direct imaging of dopant distributions in silicon by scanning transmission electron microscopy. Applied Physics Letters, 45 (4). 385-387 doi:10.1063/1.95229
Narayan, J., Holland, O. W. (1984) Rapid thermal annealing of ion‐implanted semiconductors. Journal of Applied Physics, 56 (10). 2913-2921 doi:10.1063/1.333831
Holland, O. W., Narayan, J., Fathy, D., Wilson, S. R. (1986) Characteristics of rapid thermal annealing in ion‐implanted silicon. Journal of Applied Physics, 59 (3). 905-909 doi:10.1063/1.336561
Holland, O. W., Pennycook, S. J., Albert, Gerald L. (1989) New model for damage accumulation in Si during self‐ion irradiation. Applied Physics Letters, 55 (24). 2503-2505 doi:10.1063/1.102011
 
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