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Wakao, K., Kihara, K., Kotaki, Y., Kusunoki, T., Sudo, H., Isozumi, S., Yamakoshi, S., Ishikawa, H., Imai, H. (1987) High‐efficiency InGaAsP/InP flat‐surface buried heterostructure distributed feedback lasers at 1.55 μm. Journal of Applied Physics, 62 (5). 2153-2154 doi:10.1063/1.339516

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐efficiency InGaAsP/InP flat‐surface buried heterostructure distributed feedback lasers at 1.55 μm
JournalJournal of Applied Physics
AuthorsWakao, K.Author
Kihara, K.Author
Kotaki, Y.Author
Kusunoki, T.Author
Sudo, H.Author
Isozumi, S.Author
Yamakoshi, S.Author
Ishikawa, H.Author
Imai, H.Author
Year1987 (September)Volume62
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.339516Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5032359Long-form Identifiermindat:1:5:5032359:3
GUID0
Full ReferenceWakao, K., Kihara, K., Kotaki, Y., Kusunoki, T., Sudo, H., Isozumi, S., Yamakoshi, S., Ishikawa, H., Imai, H. (1987) High‐efficiency InGaAsP/InP flat‐surface buried heterostructure distributed feedback lasers at 1.55 μm. Journal of Applied Physics, 62 (5). 2153-2154 doi:10.1063/1.339516
Plain TextWakao, K., Kihara, K., Kotaki, Y., Kusunoki, T., Sudo, H., Isozumi, S., Yamakoshi, S., Ishikawa, H., Imai, H. (1987) High‐efficiency InGaAsP/InP flat‐surface buried heterostructure distributed feedback lasers at 1.55 μm. Journal of Applied Physics, 62 (5). 2153-2154 doi:10.1063/1.339516
In(1987, September) Journal of Applied Physics Vol. 62 (5) AIP Publishing

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Tanaka, K., Hoshino, M., Wakao, K., Komeno, J., Ishikawa, H., Yamakoshi, S., Imai, H. (1985) Semi‐insulator‐embedded InGaAsP/InP flat‐surface buried heterostructure laser. Applied Physics Letters, 47 (11). 1127-1129 doi:10.1063/1.96350
Chinen, K., Gen‐ei, K., Suhara, H., Tanaka, A., Matsuyama, T., Konno, K., Muto, Y. (1987) Low‐threshold 1.55‐μm InGaAsP/InP buried heterostructure distributed feedback lasers. Applied Physics Letters, 51 (4). 273-275 doi:10.1063/1.98471
Wakao, K., Isozumi, S., Nishi, H., Ohsaka, S. (1984) InGaAsP/InGaP buried heterostructure lasers at 810 nm. Journal of Applied Physics, 56 (11). 3086-3087 doi:10.1063/1.333865
Adachi, S., Kawaguchi, H., Takahei, K., Noguchi, Y. (1981) InGaAsP/InP buried‐heterostructure lasers (λ = 1.5 μm) with chemically etched mirrors. Journal of Applied Physics, 52 (9). 5843-5845 doi:10.1063/1.329480
Wakao, K., Nishi, H., Kusunoki, T., Isozumi, S., Ohsaka, S. (1984) Room‐temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy. Applied Physics Letters, 44 (11). 1035-1037 doi:10.1063/1.94628
Yano, M., Kanno, Y., Ishikawa, H., Imai, H. (1987) Effect of stress relaxation on polarization of InGaAsP buried heterostructure lasers by a repetitive temperature change. Journal of Applied Physics, 61 (5). 1725-1727 doi:10.1063/1.338069
Kihara, K., Soda, H., Ishikawa, H., Imai, H. (1987) Evaluation of the coupling coefficient of a distributed feedback laser with residual facet reflectivity. Journal of Applied Physics, 62 (4). 1526-1527 doi:10.1063/1.339618
Kamite, K., Sudo, H., Sugano, M., Soda, H., Kusunoki, T., Ishikawa, H. (1989) 14 GHz single‐mode picosecond optical pulse train generation in Zn‐doped distributed‐feedback lasers. Applied Physics Letters, 54 (3). 208-209 doi:10.1063/1.101010
Sanada, T., Nakai, K., Wakao, K., Kuno, M., Yamakoshi, S. (1987) Planar‐embedded InGaAsP/InP heterostructure laser with a semi‐insulating InP current‐blocking layer grown by metalorganic chemical vapor deposition. Applied Physics Letters, 51 (14). 1054-1056 doi:10.1063/1.98789
Hillmer, H., Hansmann, S., Burkhard, H. (1990) Realization of high coupling coefficients in 1.53 μm InGaAsP/InP first‐order quarter‐wave shifted distributed feedback lasers. Applied Physics Letters, 57 (6). 534-536 doi:10.1063/1.103639
Kawabata, T., Ishiguro, H., Koike, S. (1988) Metalorganic chemical vapor deposition of InGaAsP/InP layers and fabrication of 1.3‐μm planar buried heterostructure lasers. Journal of Applied Physics, 64 (7). 3684-3688 doi:10.1063/1.341411
 
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