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Madakson, P., Angilello, J. (1987) Stresses and radiation damage in Ar+and Ti+ion‐implanted silicon. Journal of Applied Physics, 62 (5). 1688-1693 doi:10.1063/1.339593

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Reference TypeJournal (article/letter/editorial)
TitleStresses and radiation damage in Ar+and Ti+ion‐implanted silicon
JournalJournal of Applied Physics
AuthorsMadakson, P.Author
Angilello, J.Author
Year1987 (September)Volume62
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.339593Search in ResearchGate
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Mindat Ref. ID5032495Long-form Identifiermindat:1:5:5032495:4
GUID0
Full ReferenceMadakson, P., Angilello, J. (1987) Stresses and radiation damage in Ar+and Ti+ion‐implanted silicon. Journal of Applied Physics, 62 (5). 1688-1693 doi:10.1063/1.339593
Plain TextMadakson, P., Angilello, J. (1987) Stresses and radiation damage in Ar+and Ti+ion‐implanted silicon. Journal of Applied Physics, 62 (5). 1688-1693 doi:10.1063/1.339593
In(1987, September) Journal of Applied Physics Vol. 62 (5) AIP Publishing

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Madakson, P B (1985) Surface stresses and the hardness of ion implanted aluminium. Journal of Physics D: Applied Physics, 18. 531-540 doi:10.1088/0022-3727/18/3/020
Servidori, M., Šourek, Z., Solmi, S. (1987) Some aspects of damage annealing in ion‐implanted silicon: Discussion in terms of dopant anomalous diffusion. Journal of Applied Physics, 62 (5). 1723-1728 doi:10.1063/1.339600
Grob, J. J., Grob, A. (1987) Rapid thermal annealing‐induced epitaxy of ion‐implanted amorphous layers on 〈100〉 silicon. Journal of Applied Physics, 62 (5). 1788-1791 doi:10.1063/1.339557
Kato, Juri, Yonenaga, Tomihiro (1987) Redistribution of phosphorus in high‐energy ion‐implanted silicon. Journal of Applied Physics, 62 (10). 4311-4312 doi:10.1063/1.339060
Rothemund, W., Fritzsche, C. R. (1978) Radiation damage in ion‐implanted GaP and GaAs0.6P0.4. Applied Physics Letters, 33 (5). 435-437 doi:10.1063/1.90413
Govind, P. K., Fraikor, F. J. (1971) Electron Microscope Study of Radiation Damage in Bismuth Ion‐Implanted Cds. Journal of Applied Physics, 42 (6). 2476-2481 doi:10.1063/1.1660565
Hartemann, P. (1987) Reflection of magnetostatic forward volume waves by ion‐implanted periodic arrays. Journal of Applied Physics, 62 (5). 2111-2115 doi:10.1063/1.339505
Sasaki, Nobuo (1987) Sheet‐resistance characterization of ion‐implanted silicon resistors at cryogenic temperatures. Journal of Applied Physics, 62 (4). 1518-1521 doi:10.1063/1.339615
Alestig, G., Holmén, G., Linnros, J. (1987) Electrical properties of ion beam recrystallized and laser beam annealed arsenic‐implanted silicon on sapphire. Journal of Applied Physics, 62 (2). 409-413 doi:10.1063/1.339812
Clevers, R. H. M. (1987) 1/fnoise in ion‐implanted resistors between 77 and 300 K. Journal of Applied Physics, 62 (5). 1877-1881 doi:10.1063/1.339572
Wendler, E., Wesch, W., Götz, G. (1991) Radiation damage and optical properties of Ar+‐implanted GaP. Journal of Applied Physics, 70 (1). 144-149 doi:10.1063/1.350302
 
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