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Yokogawa, Toshiya, Kato, Ryo, Kimura, Shigeru, Sakata, Osami (2010) Microarea strain analysis in GaN-based laser diodes using high-resolution microbeam X-ray diffraction. physica status solidi (b), 247 (7). 1707-1709 doi:10.1002/pssb.200983500

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Reference TypeJournal (article/letter/editorial)
TitleMicroarea strain analysis in GaN-based laser diodes using high-resolution microbeam X-ray diffraction
Journalphysica status solidi (b)
AuthorsYokogawa, ToshiyaAuthor
Kato, RyoAuthor
Kimura, ShigeruAuthor
Sakata, OsamiAuthor
Year2010 (June 23)Volume247
Issue7
PublisherWiley
DOIdoi:10.1002/pssb.200983500Search in ResearchGate
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Mindat Ref. ID5032849Long-form Identifiermindat:1:5:5032849:1
GUID0
Full ReferenceYokogawa, Toshiya, Kato, Ryo, Kimura, Shigeru, Sakata, Osami (2010) Microarea strain analysis in GaN-based laser diodes using high-resolution microbeam X-ray diffraction. physica status solidi (b), 247 (7). 1707-1709 doi:10.1002/pssb.200983500
Plain TextYokogawa, Toshiya, Kato, Ryo, Kimura, Shigeru, Sakata, Osami (2010) Microarea strain analysis in GaN-based laser diodes using high-resolution microbeam X-ray diffraction. physica status solidi (b), 247 (7). 1707-1709 doi:10.1002/pssb.200983500
In(2010, June) physica status solidi (b) Vol. 247 (7) Wiley

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Murotani, Hideaki, Yamada, Yoichi, Taguchi, Tsunemasa, Kato, Ryo, Yokogawa, Toshiya (2010) Exciton localization in Al-rich AlGaN ternary alloy epitaxial layers. physica status solidi (c), 7 (7). 1884-1886 doi:10.1002/pssc.200983564
Yoshida, Shunji, Yokogawa, Toshiya, Imai, Yasuhiko, Kimura, Shigeru, Sakata, Osami (2011) Evidence of lattice tilt and slip in m-plane InGaN/GaN heterostructure. Applied Physics Letters, 99 (13). 131909pp. doi:10.1063/1.3644978
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Lorenz, Pierre, Haensel, Thomas, Gutt, Richard, Koch, Roland J., Schaefer, Juergen A., Krischok, Stefan (2010) Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy. physica status solidi (b), 247 (7). 1658-1661 doi:10.1002/pssb.200983691
Häberlen, Maik, Zhu, Dandan, McAleese, Clifford, Zhu, Tongtong, Kappers, Menno J., Humphreys, Colin J. (2010) Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. physica status solidi (b), 247 (7). 1753-1756 doi:10.1002/pssb.200983537
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Chow, Lee, Lupan, Oleg, Chai, Guangyu (2010) Inside Back Cover (Phys. Status Solidi B 7/2010). physica status solidi (b), 247 (7). doi:10.1002/pssb.201090013
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