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Petruzzello, J., Olego, D. J., Chu, X., Faurie, J. P. (1988) Transmission electron microscopy of (001) ZnTe on (001) GaAs grown by molecular‐beam epitaxy. Journal of Applied Physics, 63 (5). 1783-1785 doi:10.1063/1.339920

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Reference TypeJournal (article/letter/editorial)
TitleTransmission electron microscopy of (001) ZnTe on (001) GaAs grown by molecular‐beam epitaxy
JournalJournal of Applied Physics
AuthorsPetruzzello, J.Author
Olego, D. J.Author
Chu, X.Author
Faurie, J. P.Author
Year1988 (March)Volume63
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.339920Search in ResearchGate
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Mindat Ref. ID5034265Long-form Identifiermindat:1:5:5034265:9
GUID0
Full ReferencePetruzzello, J., Olego, D. J., Chu, X., Faurie, J. P. (1988) Transmission electron microscopy of (001) ZnTe on (001) GaAs grown by molecular‐beam epitaxy. Journal of Applied Physics, 63 (5). 1783-1785 doi:10.1063/1.339920
Plain TextPetruzzello, J., Olego, D. J., Chu, X., Faurie, J. P. (1988) Transmission electron microscopy of (001) ZnTe on (001) GaAs grown by molecular‐beam epitaxy. Journal of Applied Physics, 63 (5). 1783-1785 doi:10.1063/1.339920
In(1988, March) Journal of Applied Physics Vol. 63 (5) AIP Publishing

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Petruzzello, J., Olego, D., Ghandhi, S. K., Taskar, N. R., Bhat, I. (1987) Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition. Applied Physics Letters, 50 (20). 1423-1425 doi:10.1063/1.97842
Olego, D. J., Faurie, J. P., Sivananthan, S., Raccah, P. M. (1985) Optoelectronic properties of Cd1−xZnxTe films grown by molecular beam epitaxy on GaAs substrates. Applied Physics Letters, 47 (11). 1172-1174 doi:10.1063/1.96316
Petruzzello, J., Greenberg, B. L., Cammack, D. A., Dalby, R. (1988) Structural properties of the ZnSe/GaAs system grown by molecular‐beam epitaxy. Journal of Applied Physics, 63 (7). 2299-2303 doi:10.1063/1.341044
Liou, S.C., Chu, M.-W., Chen, C.H., Lee, Y.J., Chang, P., Lee, W.C., Hong, M., Kwo, J. (2008) Transmission electron microscopy characterization of HfO2/GaAs(001) heterostructures grown by molecular beam epitaxy. Applied Physics A, 91. 585-589 doi:10.1007/s00339-008-4493-3
Hsu, C., Sivananthan, S., Chu, X., Faurie, J. P. (1986) Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxy. Applied Physics Letters, 48 (14). 908-910 doi:10.1063/1.96654
Petruzzello, J., Gaines, J., van der Sluis, P., Olego, D., Ponzoni, C. (1993) Effect of N doping on the structural properties of ZnSe epitaxial layers grown by molecular beam epitaxy. Applied Physics Letters, 62 (13). 1496-1498 doi:10.1063/1.108670
Reno, J. L., Carr, M. J., Gourley, P. L. (1990) Transmission electron microscopy study of CdTe(111) grown on GaAs(100) by molecular‐beam epitaxy. Journal of Applied Physics, 67 (9). 4114-4117 doi:10.1063/1.344971
Chu, X., Sivananthan, S., Faurie, J. P. (1987) Hg1−xMnxTe‐CdTe superlattices grown by molecular beam epitaxy. Applied Physics Letters, 50 (10). 597-599 doi:10.1063/1.98092
Newbury, P. R., Shahzad, K., Petruzzello, J., Cammack, D. A. (1989) Exciton line broadening in ZnSxSe1−xepilayers grown on GaAs by molecular‐beam epitaxy. Journal of Applied Physics, 66 (10). 4950-4957 doi:10.1063/1.343767
Pashley, M. D., Haberern, K. W., Gaines, J. M. (1991) Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxy. Applied Physics Letters, 58 (4). 406-408 doi:10.1063/1.104649
Heller, E. J., Lagally, M. G. (1992) Insituscanning tunneling microscopy observation of surface morphology of GaAs(001) grown by molecular beam epitaxy. Applied Physics Letters, 60 (21). 2675-2677 doi:10.1063/1.106892
 
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