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Gill, Asghar A., Baber, N., Iqbal, M. Zafar (1990) Role of the mid‐gap level as the dominant recombination center in platinum doped silicon. Journal of Applied Physics, 67 (2). 1130-1132 doi:10.1063/1.345783

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Reference TypeJournal (article/letter/editorial)
TitleRole of the mid‐gap level as the dominant recombination center in platinum doped silicon
JournalJournal of Applied Physics
AuthorsGill, Asghar A.Author
Baber, N.Author
Iqbal, M. ZafarAuthor
Year1990 (January 15)Volume67
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.345783Search in ResearchGate
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Mindat Ref. ID5044304Long-form Identifiermindat:1:5:5044304:6
GUID0
Full ReferenceGill, Asghar A., Baber, N., Iqbal, M. Zafar (1990) Role of the mid‐gap level as the dominant recombination center in platinum doped silicon. Journal of Applied Physics, 67 (2). 1130-1132 doi:10.1063/1.345783
Plain TextGill, Asghar A., Baber, N., Iqbal, M. Zafar (1990) Role of the mid‐gap level as the dominant recombination center in platinum doped silicon. Journal of Applied Physics, 67 (2). 1130-1132 doi:10.1063/1.345783
In(1990, January) Journal of Applied Physics Vol. 67 (2) AIP Publishing

See Also

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Iqbal, M. Zafar, Gill, Asghar A., Baber, N. (1989) Electrical characterization of inadvertent midgap levels in GaP. Journal of Applied Physics, 65 (10). 3919-3922 doi:10.1063/1.343356
Gill, Asghar A., Zafar, N., Zafar Iqbal, M., Baber, N. (1994) Interaction of α‐radiation induced defects with Pd‐related deep levels in silicon. Journal of Applied Physics, 75 (12). 7737-7744 doi:10.1063/1.356605
Asghar, M., Baber, N., Zafar Iqbal, M. (1994) Deep levels in alpha‐irradiated platinum dopedn‐type silicon. Journal of Applied Physics, 76 (4). 2553-2555 doi:10.1063/1.357549
Iqbal, M. Zafar, Ahmad, M., Baber, N., Zafar, N. (1987) Controversy regarding the 0.85‐eV deep hole level in GaP. Journal of Applied Physics, 61 (7). 2690-2693 doi:10.1063/1.337908
Iqbal, M. Zafar, Jabbar, A., Baber, N., Zafar, N. (1987) An inadvertent mid-gap electron level in liquid-phase-epitaxial gap. physica status solidi (a), 99 (1). doi:10.1002/pssa.2210990154
Baber, N., Iqbal, M. Zafar (1987) Field effect on thermal emission from the 0.85‐eV hole level in GaP. Journal of Applied Physics, 62 (11). 4471-4474 doi:10.1063/1.339036
Ali, Akbar, Zafar Iqbal, M., Baber, N., Gill, Asghar A. (1995) Interaction of Iron Donor with Transition-Metal Impurities in Silicon. Materials Science Forum, 196. 689-694 doi:10.4028/www.scientific.net/msf.196-201.689
Asghar, M., Iqbal, M. Zafar, Zafar, N. (1993) Study of alpha‐radiation‐induced deep levels inp‐type silicon. Journal of Applied Physics, 73 (9). 4240-4247 doi:10.1063/1.352803
Zafar, N., Iqbal, M. Zafar (1990) α‐radiation‐induced deep levels in low‐dopedn‐type silicon. Journal of Applied Physics, 68 (2). 887-889 doi:10.1063/1.346752
Asghar, M., Zafar Iqbal, M., Zafar, N. (1993) Characterization of deep levels introduced by alpha radiation inn‐type silicon. Journal of Applied Physics, 73 (8). 3698-3708 doi:10.1063/1.352930
Ali, Akbar, Baber, N., Iqbal, M. Zafar (1995) Study of deep levels in alpha‐irradiated silver‐dopedp‐type silicon. Journal of Applied Physics, 77 (10). 5050-5059 doi:10.1063/1.359313
 
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