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Ramsteiner, M., Ralston, J. D ., Koidl, P., Dischler, B., Biebl, H., Wagner, J., Ennen, H. (1990) Doping density dependence of intersubband transitions in GaAs/AlxGa1−xAs quantum‐well structures. Journal of Applied Physics, 67 (8). 3900-3903 doi:10.1063/1.344997

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Reference TypeJournal (article/letter/editorial)
TitleDoping density dependence of intersubband transitions in GaAs/AlxGa1−xAs quantum‐well structures
JournalJournal of Applied Physics
AuthorsRamsteiner, M.Author
Ralston, J. D .Author
Koidl, P.Author
Dischler, B.Author
Biebl, H.Author
Wagner, J.Author
Ennen, H.Author
Year1990 (April 15)Volume67
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.344997Search in ResearchGate
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Mindat Ref. ID5045319Long-form Identifiermindat:1:5:5045319:5
GUID0
Full ReferenceRamsteiner, M., Ralston, J. D ., Koidl, P., Dischler, B., Biebl, H., Wagner, J., Ennen, H. (1990) Doping density dependence of intersubband transitions in GaAs/AlxGa1−xAs quantum‐well structures. Journal of Applied Physics, 67 (8). 3900-3903 doi:10.1063/1.344997
Plain TextRamsteiner, M., Ralston, J. D ., Koidl, P., Dischler, B., Biebl, H., Wagner, J., Ennen, H. (1990) Doping density dependence of intersubband transitions in GaAs/AlxGa1−xAs quantum‐well structures. Journal of Applied Physics, 67 (8). 3900-3903 doi:10.1063/1.344997
In(1990, April) Journal of Applied Physics Vol. 67 (8) AIP Publishing

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Ralston, J. D., Ramsteiner, M., Dischler, B., Maier, M., Brandt, G., Koidl, P., As, D. J. (1991) Intersubband transitions in partially interdiffused GaAs/AlGaAs multiple quantum‐well structures. Journal of Applied Physics, 70 (4). 2195-2199 doi:10.1063/1.350334
Ralston, J. D., Gallagher, D. F. G., Bittner, P., Fleissner, J., Dischler, B., Koidl, P. (1992) Grating coupling and intersubband absorption at 10 μm in GaAs/AlxGa1−xAs infrared quantum well waveguides. Journal of Applied Physics, 71 (7). 3562-3565 doi:10.1063/1.350911
Li, W. J., McCombe, B. D., Chambers, F. A., Devane, G. P., Ralston, J., Wicks, G. (1990) Compensation effects on optically pumped intersubband absorption in GaAs/AlxGa1−xAs multiple-quantum-well structures. Physical Review B, 42 (18) 11953-11956 doi:10.1103/physrevb.42.11953
Kheng, K., Ramsteiner, M., Schneider, H., Ralston, J. D., Fuchs, F., Koidl, P. (1992) Two‐color GaAs/(AlGa)As quantum well infrared detector with voltage‐tunable spectral sensitivity at 3–5 and 8–12 μm. Applied Physics Letters, 61 (6). 666-668 doi:10.1063/1.107816
Schneider, H., Kheng, K., Ramsteiner, M., Ralston, J. D., Fuchs, F., Koidl, P. (1992) Transport asymmetry and photovoltaic response in (AlGa)As/AlAs/GaAs/(AlGa)As single‐barrier quantum‐well infrared detectors. Applied Physics Letters, 60 (12). 1471-1473 doi:10.1063/1.107274
Schneider, Harald, Fuchs, Frank, Dischler, Bernhard, Ralston, John D., Koidl, Peter (1991) Intersubband absorption and infrared photodetection at 3.5 and 4.2 μm in GaAs quantum wells. Applied Physics Letters, 58 (20). 2234-2236 doi:10.1063/1.104936
Wagner, J., Larkins, E. C., Herres, N., Ralston, J. D., Koidl, P. (1993) Defect and strain redistribution in InxGa1−xAs/GaAs multiple quantum wells studied by resonant Raman scattering. Applied Physics Letters, 63 (13). 1842-1844 doi:10.1063/1.110680
Nakayama, M., Kuwahara, H., Kato, H., Kubota, K. (1987) Intersubband transitions in GaAs‐AlxGa1−xAs modulation‐doped superlattices. Applied Physics Letters, 51 (21). 1741-1743 doi:10.1063/1.98509
Wagner, J., Schmitz, J., Fuchs, F., Ralston, J. D., Koidl, P., Richards, D. (1995) Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering. Physical Review B, 51 (15) 9786-9790 doi:10.1103/physrevb.51.9786
Schönbein, C., Schneider, H., Bihlmann, G., Schwarz, K., Koidl, P. (1996) A 10 μm GaAs/AlxGa1−xAs intersubband photodetector operating at zero bias voltage. Applied Physics Letters, 68 (7). 973-975 doi:10.1063/1.116116
Julien, F. H., Lourtioz, J.‐M., Herschkorn, N., Delacourt, D., Pocholle, J. P., Papuchon, M., Planel, R., Le Roux, G. (1988) Optical saturation of intersubband absorption in GaAs‐AlxGa1−xAs quantum wells. Applied Physics Letters, 53 (2). 116-118 doi:10.1063/1.100386
 
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