Rezende, Marcos V. dos S., Paschoal, Carlos W.A., Valerio, Mário E.G., Jackson, Robert A. (2020) Computer modelling of Bi12SiO20 and Bi4Si3O12: Intrinsic defects and rare earth ion incorporation. Journal of Solid State Chemistry, 292. 121608pp. doi:10.1016/j.jssc.2020.121608
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Computer modelling of Bi12SiO20 and Bi4Si3O12: Intrinsic defects and rare earth ion incorporation | ||
Journal | Journal of Solid State Chemistry | ||
Authors | Rezende, Marcos V. dos S. | Author | |
Paschoal, Carlos W.A. | Author | ||
Valerio, Mário E.G. | Author | ||
Jackson, Robert A. | Author | ||
Year | 2020 (December) | Volume | 292 |
Publisher | Elsevier BV | ||
DOI | doi:10.1016/j.jssc.2020.121608Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5051745 | Long-form Identifier | mindat:1:5:5051745:7 |
GUID | 0 | ||
Full Reference | Rezende, Marcos V. dos S., Paschoal, Carlos W.A., Valerio, Mário E.G., Jackson, Robert A. (2020) Computer modelling of Bi12SiO20 and Bi4Si3O12: Intrinsic defects and rare earth ion incorporation. Journal of Solid State Chemistry, 292. 121608pp. doi:10.1016/j.jssc.2020.121608 | ||
Plain Text | Rezende, Marcos V. dos S., Paschoal, Carlos W.A., Valerio, Mário E.G., Jackson, Robert A. (2020) Computer modelling of Bi12SiO20 and Bi4Si3O12: Intrinsic defects and rare earth ion incorporation. Journal of Solid State Chemistry, 292. 121608pp. doi:10.1016/j.jssc.2020.121608 | ||
In | (2020) Journal of Solid State Chemistry Vol. 292. Elsevier BV |
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