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Koifman, A. I., Narkulov, A. N., Oksengendler, B. L., Yunusov, M. S. (1976) The low-temperature doping of silicon by radiation-induced diffusion. physica status solidi (a), 38 (2). 439-446 doi:10.1002/pssa.2210380203

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Reference TypeJournal (article/letter/editorial)
TitleThe low-temperature doping of silicon by radiation-induced diffusion
Journalphysica status solidi (a)
AuthorsKoifman, A. I.Author
Narkulov, A. N.Author
Oksengendler, B. L.Author
Yunusov, M. S.Author
Year1976 (December 16)Volume38
Issue2
PublisherWiley
DOIdoi:10.1002/pssa.2210380203Search in ResearchGate
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Mindat Ref. ID5052915Long-form Identifiermindat:1:5:5052915:1
GUID0
Full ReferenceKoifman, A. I., Narkulov, A. N., Oksengendler, B. L., Yunusov, M. S. (1976) The low-temperature doping of silicon by radiation-induced diffusion. physica status solidi (a), 38 (2). 439-446 doi:10.1002/pssa.2210380203
Plain TextKoifman, A. I., Narkulov, A. N., Oksengendler, B. L., Yunusov, M. S. (1976) The low-temperature doping of silicon by radiation-induced diffusion. physica status solidi (a), 38 (2). 439-446 doi:10.1002/pssa.2210380203
In(1976, December) physica status solidi (a) Vol. 38 (2) Wiley

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Koifman, A. I., Narkulov, N. A., Yunusov, M. S. (1975) Influence of structure defects on the radiation enhanced gold diffusion in silicon. physica status solidi (a), 31 (2). doi:10.1002/pssa.2210310273
Yunusov, M. S., Zaikovskaya, M. A., Oksengendler, B. L., Tokhirov, K. R. (1976) Subthreshold defect production in silicon. physica status solidi (a), 35 (2). doi:10.1002/pssa.2210350260
Yunusov, M. S., Abdurakhmanova, S. N., Zaikovskaya, M. A., Oksengendler, B. L. (1984) The Influence of Minority Carrier Injection on Subthreshold Defects in Silicon. physica status solidi (a), 81 (2). doi:10.1002/pssa.2210810252
Yunusov, M. S., Akhmadaliev, A., Oksengendler, B. L., Begmatov, K. A. (1995) On several regularities of deep levels of d-impurities in silicon. physica status solidi (a), 149 (2). doi:10.1002/pssa.2211490234
Budrevich, A. G., Lyutovich, A. S., Oksengendler, B. L. (1989) “Radiation Sieve” Effect during Epitaxy from Low Energy Ion-Molecular Flow. physica status solidi (a), 114 (2). doi:10.1002/pssa.2211140249
Kaneev, M. A., Koifman, A. I., Niyazova, O. R. (1973) Interstitial mechanism of the low-temperature gold migration in silicon. physica status solidi (a), 18 (1). doi:10.1002/pssa.2210180154
Shakirov, U. A., Yunusov, M. S. (1976) Influence of X-irradiation on silicon Schottky diodes. physica status solidi (a), 37 (2). 681-686 doi:10.1002/pssa.2210370240
Koifman, A. I., Niyazova, O. R. (1972) Reactor irradiation enhanced hetero-diffusion in silicon. physica status solidi (a), 10 (1). 59-65 doi:10.1002/pssa.2210100105
Borukhovich, P. Z., Kiv, A. E., Kimarskii, V. I., Koifman, A. I., Niyazova, O. R. (1974) Light-enhanced gold diffusion in silicon. physica status solidi (a), 25 (2). doi:10.1002/pssa.2210250255
Gurtov, V. A., Raikerus, P. A. (1990) Radiation Induced Current in Silicon Dioxide Considering Diffusion Currents. physica status solidi (a), 121 (2). doi:10.1002/pssa.2211210251
Cheng, L. J., SĂĽli, M., Kowall, J. P., Wallace, P. W., Corbett, J. W. (1976) Effects of radiation on gold diffusion in silicon. physica status solidi (a), 38 (1). 321-330 doi:10.1002/pssa.2210380136
 
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