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Houghton, D. C. (1991) Strain relaxation kinetics in Si1−xGex/Si heterostructures. Journal of Applied Physics, 70 (4). 2136-2151 doi:10.1063/1.349451

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Reference TypeJournal (article/letter/editorial)
TitleStrain relaxation kinetics in Si1−xGex/Si heterostructures
JournalJournal of Applied Physics
AuthorsHoughton, D. C.Author
Year1991 (August 15)Volume70
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.349451Search in ResearchGate
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Mindat Ref. ID5055254Long-form Identifiermindat:1:5:5055254:8
GUID0
Full ReferenceHoughton, D. C. (1991) Strain relaxation kinetics in Si1−xGex/Si heterostructures. Journal of Applied Physics, 70 (4). 2136-2151 doi:10.1063/1.349451
Plain TextHoughton, D. C. (1991) Strain relaxation kinetics in Si1−xGex/Si heterostructures. Journal of Applied Physics, 70 (4). 2136-2151 doi:10.1063/1.349451
In(1991, August) Journal of Applied Physics Vol. 70 (4) AIP Publishing

See Also

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Tuppen, C. G., Gibbings, C. J. (1990) A quantitative analysis of strain relaxation by misfit dislocation glide in Si1−xGex/Si heterostructures. Journal of Applied Physics, 68 (4). 1526-1534 doi:10.1063/1.346628
Namavar, F., Soref, R. A. (1991) Optical waveguiding in Si/Si1−xGex/Si heterostructures. Journal of Applied Physics, 70 (6). 3370-3372 doi:10.1063/1.349276
Houghton, D. C. (1990) Nucleation rate and glide velocity of misfit dislocations in Si1−xGex/(100) Si heterostructures. Applied Physics Letters, 57 (20). 2124-2126 doi:10.1063/1.103918
Yaguchi, Hiroyuki, Fujita, Ken, Fukatsu, Susumu, Shiraki, Yasuhiro, Ito, Ryoichi (1991) Strain Relaxation in MBE-Grown Si1-xGex/Si(100) Heterostructures by Annealing. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1450
Rowell, N. L., Noël, J.‐P., Houghton, D. C., Wang, A., Lenchyshyn, L. C., Thewalt, M. L. W., Perovic, D. D. (1993) Exciton luminescence in Si1−xGex/Si heterostructures grown by molecular beam epitaxy. Journal of Applied Physics, 74 (4). 2790-2805 doi:10.1063/1.354628
Buca, D., Minamisawa, R. A., Trinkaus, H., Holländer, B., Mantl, S., Loo, R., Caymax, M. (2009) Si+ ion implantation for strain relaxation of pseudomorphic Si1−xGex/Si(100) heterostructures. Journal of Applied Physics, 105 (11). 114905pp. doi:10.1063/1.3139274
Sardela, M. R., Hansson, G. V. (1994) Direct measurements of lattice parameter variations and relaxation kinetics in strained Si1−xGex/Si heterostructures. Applied Physics Letters, 65 (11). 1442-1444 doi:10.1063/1.112009
Menéndez, José (2009) Analytical strain relaxation model for Si1−xGex/Si epitaxial layers. Journal of Applied Physics, 105 (6). 63519pp. doi:10.1063/1.3093889
Xia, Guangrui, Olubuyide, Oluwamuyiwa O., Hoyt, Judy L., Canonico, Michael (2006) Strain dependence of Si–Ge interdiffusion in epitaxial Si∕Si1−yGey∕Si heterostructures on relaxed Si1−xGex substrates. Applied Physics Letters, 88 (1). 13507pp. doi:10.1063/1.2158706
Labrie, D., Lafontaine, H., Rowell, N., Charbonneau, S., Houghton, D., Goldberg, R. D., Mitchell, I. V. (1996) Quantum‐well intermixing in Si1−xGex/Si strained‐layer heterostructures using ion implantation. Applied Physics Letters, 69 (7). 993-995 doi:10.1063/1.117106
Houghton, D. C., Perovic, D. D., Baribeau, J.‐M., Weatherly, G. C. (1990) Misfit strain relaxation in GexSi1−x/Si heterostructures: The structural stability of buried strained layers and strained‐layer superlattices. Journal of Applied Physics, 67 (4). 1850-1862 doi:10.1063/1.345613
 
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