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Flemish, J. R., Shen, H., Jones, K. A., Dutta, M., Ban, V. S. (1991) Determination of the composition of strained InGaAsP layers on InP substrates using photoreflectance and double‐crystal x‐ray diffractometry. Journal of Applied Physics, 70 (4). 2152-2155 doi:10.1063/1.349452

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Reference TypeJournal (article/letter/editorial)
TitleDetermination of the composition of strained InGaAsP layers on InP substrates using photoreflectance and double‐crystal x‐ray diffractometry
JournalJournal of Applied Physics
AuthorsFlemish, J. R.Author
Shen, H.Author
Jones, K. A.Author
Dutta, M.Author
Ban, V. S.Author
Year1991 (August 15)Volume70
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.349452Search in ResearchGate
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Mindat Ref. ID5055257Long-form Identifiermindat:1:5:5055257:5
GUID0
Full ReferenceFlemish, J. R., Shen, H., Jones, K. A., Dutta, M., Ban, V. S. (1991) Determination of the composition of strained InGaAsP layers on InP substrates using photoreflectance and double‐crystal x‐ray diffractometry. Journal of Applied Physics, 70 (4). 2152-2155 doi:10.1063/1.349452
Plain TextFlemish, J. R., Shen, H., Jones, K. A., Dutta, M., Ban, V. S. (1991) Determination of the composition of strained InGaAsP layers on InP substrates using photoreflectance and double‐crystal x‐ray diffractometry. Journal of Applied Physics, 70 (4). 2152-2155 doi:10.1063/1.349452
In(1991, August) Journal of Applied Physics Vol. 70 (4) AIP Publishing


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