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Kuwatsuka, H., Mikawa, T., Miura, S., Yasuoka, N., Ito, M., Tanahashi, T., Wada, O. (1991) Impact ionization rates of holes in AlxGa1−xSb. Journal of Applied Physics, 70 (4). 2169-2172 doi:10.1063/1.349455

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Reference TypeJournal (article/letter/editorial)
TitleImpact ionization rates of holes in AlxGa1−xSb
JournalJournal of Applied Physics
AuthorsKuwatsuka, H.Author
Mikawa, T.Author
Miura, S.Author
Yasuoka, N.Author
Ito, M.Author
Tanahashi, T.Author
Wada, O.Author
Year1991 (August 15)Volume70
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.349455Search in ResearchGate
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Mindat Ref. ID5055263Long-form Identifiermindat:1:5:5055263:6
GUID0
Full ReferenceKuwatsuka, H., Mikawa, T., Miura, S., Yasuoka, N., Ito, M., Tanahashi, T., Wada, O. (1991) Impact ionization rates of holes in AlxGa1−xSb. Journal of Applied Physics, 70 (4). 2169-2172 doi:10.1063/1.349455
Plain TextKuwatsuka, H., Mikawa, T., Miura, S., Yasuoka, N., Ito, M., Tanahashi, T., Wada, O. (1991) Impact ionization rates of holes in AlxGa1−xSb. Journal of Applied Physics, 70 (4). 2169-2172 doi:10.1063/1.349455
In(1991, August) Journal of Applied Physics Vol. 70 (4) AIP Publishing

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Kuwatsuka, H., Mikawa, T., Miura, S., Yasuoka, N., Kito, Y., Tanahashi, T., Wada, O. (1990) Measurement of the impact ionization rates in Al0.06Ga0.94Sb. Applied Physics Letters, 57 (3). 249-251 doi:10.1063/1.103705
Miura, S., Mikawa, T., Kuwatsuka, H., Yasuoka, N., Tanahashi, T., Wada, O. (1989) AlGaSb avalanche photodiode exhibiting a very low excess noise factor. Applied Physics Letters, 54 (24). 2422-2423 doi:10.1063/1.101095
Kuwatsuka, H., Tanahashi, T., Anayama, C., Nishiyama, S., Mikawa, T., Nakajima, K. (1989) Liquid phase epitaxial growth of AlxGa1−xSb from Sb-rich solution. Journal of Crystal Growth, 94 (4). 923-928 doi:10.1016/0022-0248(89)90126-7
Miura, S., Kuwatsuka, H., Mikawa, T., Wada, O. (1986) Planar, embedded InP/GaInAsp‐i‐nphotodiode with very high‐speed response characteristics. Applied Physics Letters, 49 (22). 1522-1524 doi:10.1063/1.97321
Mikawa, T., Kagawa, S., Kaneda, T., Toyama, Y., Mikami, O. (1980) Crystal orientation dependence of ionization rates in germanium. Applied Physics Letters, 37 (4). 387-389 doi:10.1063/1.91932
Ichimura, M., Higuchi, K., Hattori, Y., Wada, T., Kitamura, N. (1990) Native defects in the AlxGa1−xSb alloy semiconductor. Journal of Applied Physics, 68 (12). 6153-6158 doi:10.1063/1.346904
Grein, C. H., Ehrenreich, H. (2000) Impact ionization enhancements in AlxGa1−xSb avalanche photodiodes. Applied Physics Letters, 77 (19). 3048-3050 doi:10.1063/1.1324000
Jiang, Y., Teich, M. C., Wang, W. I. (1990) Hole impact ionization enhancement in AlxGa1−xSb. Journal of Applied Physics, 67 (5). 2488-2493 doi:10.1063/1.345499
Sugiura, K., Domen, K., Sugawara, M., Anayama, C., Kondo, M., Tanahashi, T., Nakajima, K. (1991) Analysis of recombination centers in (AlxGa1−x)0.5In0.5P quaternary alloys. Journal of Applied Physics, 70 (9). 4946-4949 doi:10.1063/1.349041
Wada, O., Miura, S., Ito, M., Fujii, T., Sakurai, T., Hiyamizu, S. (1983) Monolithic integration of a photodiode and a field‐effect transistor on a GaAs substrate by molecular beam epitaxy. Applied Physics Letters, 42 (4). 380-382 doi:10.1063/1.93946
Pearsall, T. P. (1980) Impact ionization rates for electrons and holes in Ga0.47In0.53As. Applied Physics Letters, 36 (3). 218-220 doi:10.1063/1.91431
 
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