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(1995, June) Journal of Applied Physics Vol. 77 (11) AIP Publishing

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Reference TypeJournal (issue)
JournalJournal of Applied Physics
Year1995 (June)Volume77
Issue<   11   >
PublisherAIP Publishing
Mindat Ref. ID5073181Long-form Identifiermindat:1:5:5073181:7
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Full Reference(1995, June) Journal of Applied Physics Vol. 77 (11) AIP Publishing
Plain Text(1995, June) Journal of Applied Physics Vol. 77 (11) AIP Publishing
In(1995) Journal of Applied Physics Vol. 77. AIP Publishing

Contains

Ergenzinger, K., Hoffmann, K. H., Salamon, P. (1995) Optimal simulated annealing schedules for self similar systems. Journal of Applied Physics, 77 (11). 5501-5508 doi:10.1063/1.359253
Ugajin, Ryuichi (1995) A method of detecting the number of electrons in a square‐well quantum dot using far‐infrared absorption. Journal of Applied Physics, 77 (11). 5509-5513 doi:10.1063/1.359254
Butler, D. J., Horsfall, A., Nugent, K. A., Roberts, A., Bassett, I. M., Lo, K. M. (1995) Measurement of an elliptical fiber mode field using near‐field microscopy. Journal of Applied Physics, 77 (11). 5514-5517 doi:10.1063/1.359255
Asobe, Masaki, Kanamori, Terutoshi, Naganuma, Kazunori, Itoh, Hiroki, Kaino, Toshikuni (1995) Third‐order nonlinear spectroscopy in As2S3chalcogenide glass fibers. Journal of Applied Physics, 77 (11). 5518-5523 doi:10.1063/1.359256
Bilodeau, T. G., Ewing, K. J., Nau, G. M., Aggarwal, I. D. (1995) Comparison ofinsituionizing radiation effects on Raman and photoluminescence intensity of high OH, low OH silica, and fluoride core fibers. Journal of Applied Physics, 77 (11). 5524-5527 doi:10.1063/1.359596
Jia, X., MatteĂŻ, Ch., Quentin, G. (1995) Analysis of optical interferometric measurements of guided acoustic waves in transparent solid media. Journal of Applied Physics, 77 (11). 5528-5537 doi:10.1063/1.359592
McMillin, Brian K., Zachariah, Michael R. (1995) Two‐dimensional argon metastable density measurements in a radio frequency plasma reactor by planar laser‐induced fluorescence imaging. Journal of Applied Physics, 77 (11). 5538-5544 doi:10.1063/1.359193
Laqua, H., Bluhm, H., Buth, L., Hoppé, P. (1995) Properties of the nonequilibrium plasma from a pulsed sliding discharge in a hydrogen gas layer desorbed from a metal hydride film. Journal of Applied Physics, 77 (11). 5545-5552 doi:10.1063/1.359194
Yang, Xizhen, Lin, Zhenjin, Li, Zhigang, Wu, Liu, Mao, Chenjie (1995) GaP1−xNxalloys formed by ion implantation. Journal of Applied Physics, 77 (11). 5553-5557 doi:10.1063/1.359195
Ahn, You‐Ock, Seidl, Milos (1995) Defect‐induced nucleation of sputter‐deposited gold on graphite. Journal of Applied Physics, 77 (11). 5558-5562 doi:10.1063/1.359196
Huh, J.‐Y., Tan, T. Y., Gösele, U. (1995) Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon. Journal of Applied Physics, 77 (11). 5563-5571 doi:10.1063/1.359197
Ali, Akbar, Iqbal, M. Zafar, Baber, N. (1995) Study of the alpha irradiation and thermal annealing of gold‐dopedn‐type silicon. Journal of Applied Physics, 77 (11). 5572-5579 doi:10.1063/1.359198
Sargunas, V., Thompson, D. A., Simmons, J. G. (1995) Electrical properties ofp‐type InGaAsP and InGaAs irradiated with He+and N+. Journal of Applied Physics, 77 (11). 5580-5583 doi:10.1063/1.359199
Dannefaer, S., Bretagnon, T. (1995) Character and distribution of vacancies in Czochralski‐grown silicon ingots. Journal of Applied Physics, 77 (11). 5584-5588 doi:10.1063/1.359200
Kim, Kwang Yul, Sribar, Rok, Sachse, Wolfgang (1995) Analytical and optimization procedures for determination of all elastic constants of anisotropic solids from group velocity data measured in symmetry planes. Journal of Applied Physics, 77 (11). 5589-5600 doi:10.1063/1.359201
Gosling, T. J., Willis, J. R. (1995) Mechanical stability and electronic properties of buried strained quantum wire arrays. Journal of Applied Physics, 77 (11). 5601-5610 doi:10.1063/1.359202
Su, C. M., Wuttig, Manfred, Fekade, A., Spencer, M. (1995) Elastic and anelastic properties of chemical vapor deposited epitaxial 3C‐SiC. Journal of Applied Physics, 77 (11). 5611-5615 doi:10.1063/1.359551
Chen, P., Steckl, A. J. (1995) Selective compositional mixing in GaAs/AlGaAs superlattice induced by low dose Si focused ion beam implantation. Journal of Applied Physics, 77 (11). 5616-5624 doi:10.1063/1.359203
Popovici, Galina, Sung, T., Khasawinah, S., Prelas, M. A., Wilson, R. G. (1995) Forced diffusion of impurities in natural diamond and polycrystalline diamond films. Journal of Applied Physics, 77 (11). 5625-5629 doi:10.1063/1.359204
Baccus, Bruno, Vandenbossche, Eric, Lannoo, Michel (1995) Modeling high‐concentration boron diffusion under amorphization conditions. Journal of Applied Physics, 77 (11). 5630-5641 doi:10.1063/1.359205
Konstadinidis, K., Papadimitrakopoulos, F., Galvin, M., Opila, R. L. (1995) In situx‐ray photoelectron spectroscopy study of aluminum/poly (p‐phenylenevinylene) interfaces. Journal of Applied Physics, 77 (11). 5642-5646 doi:10.1063/1.359206
Choy, Jun‐Ho, Hackney, Stephen A., Lee, Jong K. (1995) Nonlinear stability analysis of the diffusional spheroidization of rods. Journal of Applied Physics, 77 (11). 5647-5654 doi:10.1063/1.359207
Meyer, SĂ©bastien, Smith, Paul, Wittmann, Jean‐Claude (1995) Epitaxial growth and photopolymerization of diacetylene films on oriented layers of poly(tetrafluoroethylene). Journal of Applied Physics, 77 (11). 5655-5660 doi:10.1063/1.359208
Yan, Baojie, Adriaenssens, Guy J. (1995) Electron emission from deep states and evaluation of the density of states in a‐Si:H. Journal of Applied Physics, 77 (11). 5661-5668 doi:10.1063/1.359521
Vanhellemont, J., Simoen, E., Kaniava, A., Libezny, M., Claeys, C. (1995) Impact of oxygen related extended defects on silicon diode characteristics. Journal of Applied Physics, 77 (11). 5669-5676 doi:10.1063/1.359209
Drory, A., Balberg, I. (1995) The general Green’s‐function solutions for the two carrier concentrations under any small signal nonuniform carrier generation. Journal of Applied Physics, 77 (11). 5677-5694 doi:10.1063/1.359210
Coen, M. Collaud, Groening, P., Dietler, G., Schlapbach, L. (1995) Creation of a conductive surface layer on polypropylene samples by low‐pressure plasma treatments. Journal of Applied Physics, 77 (11). 5695-5701 doi:10.1063/1.359211
Meaudre, M., Meaudre, R., Vignoli, S. (1995) Thermal annealing of light‐induced defects inp‐i‐pandn‐i‐nhydrogenated amorphous silicon structures: Influence of hole and electron injection. Journal of Applied Physics, 77 (11). 5702-5705 doi:10.1063/1.359212
Kuramochi, Eiichi, Takanashi, Yoshifumi (1995) Strain effects in InGaSb/AlGaSb quantum wells grown by molecular beam epitaxy. Journal of Applied Physics, 77 (11). 5706-5711 doi:10.1063/1.359213
Emiliani, V., Bonanni, B., Frova, A., Capizzi, M., Martelli, F., Stone, S.‐S. (1995) Tunneling and relaxation of photogenerated carriers in near‐surface quantum wells. Journal of Applied Physics, 77 (11). 5712-5717 doi:10.1063/1.359214
Gassmann, P., Bartolucci, F., Franchy, R. (1995) Formation of thin AlN films on NiAl(001) upon thermal decomposition of ammonia. Journal of Applied Physics, 77 (11). 5718-5724 doi:10.1063/1.359215
Agarwal, Sandeep, Mohapatra, Y. N., Singh, Vijay A., Sharan, R. (1995) Time analyzed transient spectroscopy and multipleDXrelated emission centers in silicon doped AlxGa1−xAs. Journal of Applied Physics, 77 (11). 5725-5729 doi:10.1063/1.359216
Warren, W. L., Seager, C. H., Kanicki, J., Crowder, M. S., Sigari, E. (1995) Ultraviolet light induced annihilation of silicon dangling bonds in hydrogenated amorphous silicon nitride films. Journal of Applied Physics, 77 (11). 5730-5735 doi:10.1063/1.359593
Huang, Z. C., Wie, C. R., Chen, J. C., Davis, G. (1995) Interface traps in InP/InAlGaAsp‐njunctions by metal organic chemical vapor deposition. Journal of Applied Physics, 77 (11). 5736-5738 doi:10.1063/1.359217
Heller, Eric R., Fisher, Kent, Szmulowicz, Frank, Madarasz, Frank L. (1995) Superlattice parameters for optimum absorption in InAs/InxGa1−xSb superlattice infrared detectors. Journal of Applied Physics, 77 (11). 5739-5746 doi:10.1063/1.359218
Chen, W. Q., Hark, S. K. (1995) Strain‐induced effects in (111)‐oriented InAsP/InP, InGaAs/InP, and InGaAs/InAlAs quantum wells on InP substrates. Journal of Applied Physics, 77 (11). 5747-5750 doi:10.1063/1.359219
Wang, Shi‐Qing, Hong, Stella, White, Allen, Hoener, Carolyn, Mayer, J. W. (1995) Interfacial reactions in the SiO2/Ru and SiO2/Ru/Al‐Si structures. Journal of Applied Physics, 77 (11). 5751-5762 doi:10.1063/1.359220
Reinhardt, K. C., Yeo, Y. K., Hengehold, R. L. (1995) Junction characteristics of Ga0.5In0.5Pn+pdiodes and solar cells. Journal of Applied Physics, 77 (11). 5763-5772 doi:10.1063/1.359221
Krispin, P., Hey, R., Kostial, H. (1995) Intrinsic origin and composition dependence of deep‐level defects at the inverted GaAs/AlxGa1−xAs interface grown by molecular‐beam epitaxy. Journal of Applied Physics, 77 (11). 5773-5781 doi:10.1063/1.359222
Liesegang, J., Senn, B. C., Smith, E. R. (1995) Resistivity of static and antistatic insulators from surface charge measurement. Journal of Applied Physics, 77 (11). 5782-5785 doi:10.1063/1.359223
Kumar, T., Cahay, M., Shi, S., Roenker, K., Stanchina, W. E. (1995) Limit of validity of the thermionic‐field‐emission treatment of electron injection across emitter‐base junctions in abrupt heterojunction bipolar transistors. Journal of Applied Physics, 77 (11). 5786-5792 doi:10.1063/1.359224
Wang, Q. H., Bowser, M. I., Swanson, J. G. (1995) The effect of plasma pretreatments on interface state electron emission in Si3N4–GaAs structures. Journal of Applied Physics, 77 (11). 5793-5801 doi:10.1063/1.359594
Kumar, Dhananjay, Apte, P. R., Pinto, R. (1995) Two‐dimensional growth model for laser‐ablated Ag‐doped YBa2Cu3O7−xthin films. Journal of Applied Physics, 77 (11). 5802-5808 doi:10.1063/1.359159
Oya, Gin‐ichiro, Diao, Chien Chen, Imai, Syozo, Uzawa, Takaaki, Sawada, Yasuji, Sugai, Tokuko, Nakajima, Kensuke, Yamashita, Tsutomu (1995) Atomic oxygen effect on theinsitugrowth of stoichiometric YBa2Cu3O7−ήepitaxial films by facing targets 90° off‐axis radiofrequency magnetron sputtering. Journal of Applied Physics, 77 (11). 5809-5818 doi:10.1063/1.359160
VelĂĄzquez, J., Navarro, E., VĂĄzquez, M., Hernando, A., Rivero, G., BarandiarĂĄn, J. M. (1995) Torsional mode magnetoelastic resonance in ferromagnetic amorphous wire. Journal of Applied Physics, 77 (11). 5819-5827 doi:10.1063/1.359161
Ishii, Osamu, Senda, Masakatsu (1995) High coercivity and high wear resistance γ‐Fe2O3thin films. Journal of Applied Physics, 77 (11). 5828-5830 doi:10.1063/1.359162
Wang, Qi, Shi, Jie‐long, Bao, Jia‐shan (1995) Theory of nonlinear magnetostatic surface wave in a periodically corrugated ferromagnetic slab. Journal of Applied Physics, 77 (11). 5831-5837 doi:10.1063/1.359163
Soeya, Susumu, Nakamura, Shin, Imagawa, Takao, Narishige, Shinji (1995) Rotational hysteresis loss study on exchange coupled Ni81Fe19/NiO films. Journal of Applied Physics, 77 (11). 5838-5842 doi:10.1063/1.359164
Okano, R., Hono, K., Takanashi, K., Fujimori, H., Sakurai, T. (1995) Magnetoresistance and phase decomposition in Cr‐Fe bulk alloys. Journal of Applied Physics, 77 (11). 5843-5849 doi:10.1063/1.359165
Cabrera, A. L., Pino, M., Volkmann, U. G. (1995) Thermogravimetric measurements of thin iron films magnetization near their Curie temperature. Journal of Applied Physics, 77 (11). 5850-5852 doi:10.1063/1.359591
Parker, F. T., Spada, F. E., Cox, T. J., Berkowitz, A. E. (1995) Spin‐glass behavior of spinel iron oxide particles on iron metal particle recording media. Journal of Applied Physics, 77 (11). 5853-5864 doi:10.1063/1.359166
Clem, Paul G., Payne, David A., Warren, William L. (1995) Observation of two charge states of ruthenium in PbTiO3single crystals. Journal of Applied Physics, 77 (11). 5865-5868 doi:10.1063/1.359167
Callens, F., Vandenbroucke, D., Soens, L., Cardon, F. (1995) Occurrence of multiple dielectric‐loss curves for silver halide emulsions: Difficulties of interpretation. Journal of Applied Physics, 77 (11). 5869-5881 doi:10.1063/1.359168
Gruber, John B., Seltzer, Michael D., Pugh, Vincent J., Richardson, Frederick S. (1995) Electronic energy‐level structure of trivalent holmium in yttrium aluminum garnet. Journal of Applied Physics, 77 (11). 5882-5901 doi:10.1063/1.359169
Iyer, S., Small, L., Hegde, S. M., Bajaj, K. K., Abul‐Fadl, A. (1995) Low‐temperature photoluminescence of Te‐doped GaSb grown by liquid phase electroepitaxy. Journal of Applied Physics, 77 (11). 5902-5909 doi:10.1063/1.359170
Huang, X., Ninio, F., Brown, L. J., Prawer, S. (1995) Raman scattering studies of surface modification in 1.5 MeV Si‐implanted silicon. Journal of Applied Physics, 77 (11). 5910-5915 doi:10.1063/1.359171
Bormett, Richard W., Asher, Sanford A., Witowski, Robert E., Partlow, William D., Lizewski, Robert, Pettit, Fred (1995) Ultraviolet Raman spectroscopy characterizes chemical vapor deposition diamond film growth and oxidation. Journal of Applied Physics, 77 (11). 5916-5923 doi:10.1063/1.359172
Balandin, A., Bandyopadhyay, S. (1995) Quantum confined Lorentz effect in a quantum wire. Journal of Applied Physics, 77 (11). 5924-5928 doi:10.1063/1.359173
Loro, H., Voda, M., Jaque, F., García Solé, J., Muñoz Santiuste, J. E. (1995) Polarized absorption of Nd3+in LiNbO3: Effect of MgO codoping. Journal of Applied Physics, 77 (11). 5929-5935 doi:10.1063/1.359174
Zhang, Libing, Coffer, Jeffery L., Gnade, Bruce E., Xu, DaXue, Pinizzotto, Russell F. (1995) Effects of local ambient atmosphere on the stability of electroluminescent porous silicon diodes. Journal of Applied Physics, 77 (11). 5936-5941 doi:10.1063/1.359550
Fischer, D. W., Ohmer, M. C., Schunemann, P. G., Pollak, T. M. (1995) Direct measurement of ZnGeP2birefringence from 0.66 to 12.2 ÎŒm using polarized light interference. Journal of Applied Physics, 77 (11). 5942-5945 doi:10.1063/1.359175
Plentz, F., Meneses, E. A., Meseguer, F., Sánchez‐Dehesa, J. (1995) New AlxGa1−xAs related deep luminescence observed in modulation doped quantum wells. Journal of Applied Physics, 77 (11). 5946-5949 doi:10.1063/1.359176
Hare, David E., Franken, Jens, Dlott, Dana D. (1995) Coherent Raman measurements of polymer thin‐film pressure and temperature during picosecond laser ablation. Journal of Applied Physics, 77 (11). 5950-5960 doi:10.1063/1.359177
Kumuduni, W. K. A., Nakata, Y., Sasaki, Y., Okada, T., Maeda, M., Kisu, T., Takeo, M., Enpuku, K. (1995) Effect of cumulative ablation on the ejection of particulates and molecular species from YBa2Cu3O7−xtargets. Journal of Applied Physics, 77 (11). 5961-5967 doi:10.1063/1.359178
Fu, Senlin, Ozoe, Hiroyuki (1995) Growth characteristics of single‐crystal rods and fibers of Bi12SiO20by the floating zone method. Journal of Applied Physics, 77 (11). 5968-5977 doi:10.1063/1.359179
Jeon, Seok Ryong, Han, Sung Wook, Park, Jong Wan (1995) Effect of rapid thermal annealing treatment on electrical properties and microstructure of tantalum oxide thin film deposited by plasma‐enhanced chemical vapor deposition. Journal of Applied Physics, 77 (11). 5978-5981 doi:10.1063/1.359180
Wang, Liangbin, Wu, Wenbin, Li, Xiao‐Guang, Zhang, Yuheng (1995) Two different micromodels of zinc oxide varistors. Journal of Applied Physics, 77 (11). 5982-5986 doi:10.1063/1.359181
Weegels, L. M., Saitoh, T., Kanbe, H. (1995) Dynamics of GaAs surfaces exposed to argon and hydrogen electron‐cyclotron‐resonance plasmas observed by real‐time optical reflection spectroscopy. Journal of Applied Physics, 77 (11). 5987-5994 doi:10.1063/1.359182
Sakashita, Yukio, Segawa, Hideo (1995) Preparation and characterization of LiNbO3thin films produced by chemical‐vapor deposition. Journal of Applied Physics, 77 (11). 5995-5999 doi:10.1063/1.359183
Lee, Si‐Woo, Joo, Seung‐Ki (1995) Doping effects in zone‐melting recrystallization of silicon thin films. Journal of Applied Physics, 77 (11). 6000-6005 doi:10.1063/1.359184
Schenk, A., Winter, B., Lutterloh, C., Biener, J., Schubert, U. A., KĂŒppers, J. (1995) The influence of boron doping on the structure and thermal decomposition of ultrathin C/B:H films. Journal of Applied Physics, 77 (11). 6006-6014 doi:10.1063/1.359185
Ide, Osamu (1995) Increased voltage phenomenon in a resonance circuit of unconventional magnetic configuration. Journal of Applied Physics, 77 (11). 6015-6020 doi:10.1063/1.359520
Triantis, D. P., Birbas, A. N., Zimmermann, J. J. (1995) Flicker noise in submicron metal oxide semiconductor field effect transistors with nitrided gate oxide. Journal of Applied Physics, 77 (11). 6021-6025 doi:10.1063/1.359186
Ouacha, A., Willander, M., Brugger, H., Meiners, U. (1995) Influence of the barrier thickness on the noise performance of AlAs/GaAs/AlAs double barrier resonant tunneling diodes. Journal of Applied Physics, 77 (11). 6026-6030 doi:10.1063/1.359187
Kong, S. H., Kinross‐Wright, J., Nguyen, D. C., Sheffield, R. L. (1995) Cesium telluride photocathodes. Journal of Applied Physics, 77 (11). 6031-6038 doi:10.1063/1.359188
Lumsden, Mark, Steinitz, Michael, McAlduff, E. J. (1995) Phase transitions involving vacancy ordering in two metal mercuric iodides, Ag2HgI4and Cu2HgI4. Journal of Applied Physics, 77 (11). 6039-6041 doi:10.1063/1.359189
Murugkar, S., Merlin, R., Botchkarev, A., Salvador, A., Morkoç, H. (1995) Second order Raman spectroscopy of the wurtzite form of GaN. Journal of Applied Physics, 77 (11). 6042-6043 doi:10.1063/1.359190
Jonnard, P., Vergand, F., Bonnelle, C., Badawi, K. F. (1995) Correlation between electronic and atomic structures in Ag‐Ni multilayers. Journal of Applied Physics, 77 (11). 6044-6045 doi:10.1063/1.359191
Buot, F. A., Rajagopal, A. K. (1995) Zener tunneling condition and the hysteresis of trapped charge in an AlGaSb barrier in AlGaSb/InAs/AlGaSb double‐barrier structures. Journal of Applied Physics, 77 (11). 6046-6048 doi:10.1063/1.359192
Venkataramanan, V., Subramanian, C. K., Bhat, H. L. (1995) Laser induced damage in zinc tris(thiourea) sulfate and bis(thiourea) cadmium chloride. Journal of Applied Physics, 77 (11). 6049-6051 doi:10.1063/1.359127
Kolomenskii, Al. A., Maznev, A. A. (1995) Propagation of laser‐generated surface acoustic waves visualized by shake‐off of fine particles. Journal of Applied Physics, 77 (11). 6052-6054 doi:10.1063/1.359128
Ong, T. P., Tobin, Philip, Mele, Thomas (1995) Deposition of ultrathin silicon dioxide film from pyrolysis of tetraethoxysilane. Journal of Applied Physics, 77 (11). 6055-6057 doi:10.1063/1.359589
Mehta, S. K., Srinivasan, T., Dubey, G. C., Jain, R. K. (1995) Influence of hydrogenation on photoluminescence of GaAlAs grown by molecular beam epitaxy. Journal of Applied Physics, 77 (11). 6058-6060 doi:10.1063/1.359129
Yamaguchi, Koichi, Okamoto, Kotaro, Yugo, Shigemi (1995) Scanning tunneling microscope with gallium arsenide microtip fabricated by selective epitaxial growth. Journal of Applied Physics, 77 (11). 6061-6063 doi:10.1063/1.359130
Chin, V. W. L., Zhou, Bing, Tansley, T. L., Li, Xin (1995) Alloy‐scattering dependence of electron mobility in the ternary gallium, indium, and aluminum nitrides. Journal of Applied Physics, 77 (11). 6064-6066 doi:10.1063/1.359131
GruĆŸinskis, V., Starikov, E., Shiktorov, P., Reggiani, L., Varani, L. (1995) A doubleS‐type instability in semiconductor heterostructures. Journal of Applied Physics, 77 (11). 6067-6069 doi:10.1063/1.359132
Davazoglou, D., Pallis, G., Psycharis, V., Gioti, M., Logothetidis, S. (1995) Structure and optical properties of tungsten thin films deposited by pyrolysis of W(CO)6at various temperatures. Journal of Applied Physics, 77 (11). 6070-6072 doi:10.1063/1.359133
Yano, Y., Iijima, K., Daitoh, Y., Terashima, T., Bando, Y., Watanabe, Y., Kasatani, H., Terauchi, H. (1995) Erratum: Epitaxial growth and dielectric properties of BaTiO3 films on Pt electrodes by reactive evaporation [J. Appl. Phys. 76, 7833 (1994)]. Journal of Applied Physics, 77 (11). 6073 doi:10.1063/1.359616

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