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Fu, Y., Willander, M. (1995) Subband structure and ionized impurity scattering of the two dimensional electron gas in δ‐doped field effect transistor. Journal of Applied Physics, 78 (5). 3504-3510 doi:10.1063/1.359984

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Reference TypeJournal (article/letter/editorial)
TitleSubband structure and ionized impurity scattering of the two dimensional electron gas in δ‐doped field effect transistor
JournalJournal of Applied Physics
AuthorsFu, Y.Author
Willander, M.Author
Year1995 (September)Volume78
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.359984Search in ResearchGate
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Mindat Ref. ID5076439Long-form Identifiermindat:1:5:5076439:2
GUID0
Full ReferenceFu, Y., Willander, M. (1995) Subband structure and ionized impurity scattering of the two dimensional electron gas in δ‐doped field effect transistor. Journal of Applied Physics, 78 (5). 3504-3510 doi:10.1063/1.359984
Plain TextFu, Y., Willander, M. (1995) Subband structure and ionized impurity scattering of the two dimensional electron gas in δ‐doped field effect transistor. Journal of Applied Physics, 78 (5). 3504-3510 doi:10.1063/1.359984
In(1995, September) Journal of Applied Physics Vol. 78 (5) AIP Publishing

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Fu, Y., Wang, T. H., Willander, M. (2001) Designing two-dimensional electron gases in GaAs/InGaAs/AlGaAs, δ-doped AlGaAs/GaAs, and AlGaAs/InGaAs/GaAs heterostructures for single electron transistor application. Journal of Applied Physics, 89 (3). 1759pp. doi:10.1063/1.1328787
Fu, Y., Willander, M. (1997) Ionized impurity scattering of the two-dimensional electron system in heterointerface. Surface Science, 391 (1). 81-88 doi:10.1016/s0039-6028(97)00457-3
Fu, Y., Willander, M. (1997) Near-ballistic transport and current–voltage characteristics of a GaAs/AlGaAs heterojunction field effect transistor under the influence of impurity scattering. Journal of Applied Physics, 82 (10). 5227-5230 doi:10.1063/1.366387
Fu, Y., Willander, M., Wang, T. H. (2001) Etching trenches to effectively create electron quantum wires for single-electron-transistor applications. Applied Physics Letters, 78 (23). 3705-3707 doi:10.1063/1.1377315
Gelmont, B., Shur, M. S. (1995) Hall factor for ionized impurity scattering. Journal of Applied Physics, 78 (4). 2846-2847 doi:10.1063/1.360085
Vinter, B. (1984) Subbands and charge control in a two‐dimensional electron gas field‐effect transistor. Applied Physics Letters, 44 (3). 307-309 doi:10.1063/1.94734
Grinberg, A. A., Shur, M. S. (1985) Effect of image charges on impurity scattering of two‐dimensional electron gas in AlGaAs/GaAs. Journal of Applied Physics, 58 (1). 382-386 doi:10.1063/1.335689
Grinberg, A. A. (1986) The effect of the two‐dimensional gas degeneracy on theI‐Vcharacteristics of the modulation‐doped field‐effect transistor. Journal of Applied Physics, 60 (3). 1097-1103 doi:10.1063/1.337351
Tang, Y. S. (1992) Electron subband filling and band renormalization in modulation spectroscopy of single modulation doped heterojunctions and δ‐doped structures. Journal of Applied Physics, 71 (5). 2392-2396 doi:10.1063/1.351095
Chen, Qiang, Willander, Magnus (1991) Analysis of charge control in Si delta‐doped field‐effect transistor. Journal of Applied Physics, 69 (12). 8233-8236 doi:10.1063/1.347428
Fu, Y., Chen, Q., Willander, M., Brugger, H., Meiners, U. (1993) Influence of impurity and phonon scattering effects in resonant tunneling structures. Journal of Applied Physics, 74 (3). 1874-1878 doi:10.1063/1.354795
 
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