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Dalfors, J., Lundström, T., Holtz, P. O., Radamson, H. H., Monemar, B., Wallin, J., Landgren, G. (1996) The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy. Journal of Applied Physics, 80 (12). 6855-6860 doi:10.1063/1.363752

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Reference TypeJournal (article/letter/editorial)
TitleThe electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy
JournalJournal of Applied Physics
AuthorsDalfors, J.Author
Lundström, T.Author
Holtz, P. O.Author
Radamson, H. H.Author
Monemar, B.Author
Wallin, J.Author
Landgren, G.Author
Year1996 (December 15)Volume80
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.363752Search in ResearchGate
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Mindat Ref. ID5081856Long-form Identifiermindat:1:5:5081856:9
GUID0
Full ReferenceDalfors, J., Lundström, T., Holtz, P. O., Radamson, H. H., Monemar, B., Wallin, J., Landgren, G. (1996) The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy. Journal of Applied Physics, 80 (12). 6855-6860 doi:10.1063/1.363752
Plain TextDalfors, J., Lundström, T., Holtz, P. O., Radamson, H. H., Monemar, B., Wallin, J., Landgren, G. (1996) The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy. Journal of Applied Physics, 80 (12). 6855-6860 doi:10.1063/1.363752
In(1996, December) Journal of Applied Physics Vol. 80 (12) AIP Publishing

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Dalfors, J., Lundström, T., Holtz, P. O., Radamson, H. H., Monemar, B., Wallin, J., Landgren, G. (1997) The effective masses in strained InGaAs/InP quantum wells deduced from magnetoexcitation spectroscopy. Applied Physics Letters, 71 (4). 503-505 doi:10.1063/1.119591
Lundström, T., Dalfors, J., Holtz, P. O., Zhao, Q. X., Monemar, B., Landgren, G., Wallin, J. (1996) Self-consistent calculations and magnetoluminescence studies of strained InP/InxGa1−xAs heterojunctions. Physical Review B, 54 (15) 10637-10643 doi:10.1103/physrevb.54.10637
Zhao, Q. X., Holtz, P. O., Monemar, B., Lundström, T., Wallin, J., Landgren, G. (1993) Electron and hole effective masses from magnetoluminescence studies of modulation-doped InP/In0.53Ga0.47As heterostructures. Physical Review B, 48 (16) 11890-11896 doi:10.1103/physrevb.48.11890
Stoklitsky, S. A., Zhao, Q. X., Holtz, P. O., Monemar, B., Lundström, T. (1995) Optical intervalence‐subband transitions in strainedp‐type In1−xGaxAs/InP quantum wells. Journal of Applied Physics, 77 (10). 5256-5262 doi:10.1063/1.359277
Stoklitsky, S. A., Holtz, P. O., Monemar, B., Zhao, Q. X., Lundström, T. (1994) Strain effects on the intervalence‐subband normal‐incidence absorption in ap‐type InGaAs/InP quantum well. Applied Physics Letters, 65 (13). 1706-1708 doi:10.1063/1.112892
Holtz, P. O., Sernelius, B., Buyanov, A. V., Pozina, G., Radamson, H. H., Madsen, L. D., McCaffrey, J. P., Monemar, B., Thordson, J., Andersson, T. G. (1998) Si δ-layers embedded in GaAs. Applied Physics Letters, 73 (25). 3709-3711 doi:10.1063/1.122871
Singh, Mandeep, Chen, W. M., Son, N. T., Monemar, B. (1995) Efficient excitation transfer in silicon studied by Fourier transform photoluminescence excitation spectroscopy. Applied Physics Letters, 66 (12). 1498-1500 doi:10.1063/1.113667
Haratizadeh, H., Paskov, P. P., Pozina, G., Holtz, P. O., Monemar, B., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. (2002) Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells. Applied Physics Letters, 80 (8). 1373-1375 doi:10.1063/1.1448144
Andersson, J. Y., Landgren, G. (1988) Intersubband transitions in single AlGaAs/GaAs quantum wells studied by Fourier transform infrared spectroscopy. Journal of Applied Physics, 64 (8). 4123-4127 doi:10.1063/1.341322
Dalfors, J., Bergman, J. P., Holtz, P. O., Sernelius, B. E., Monemar, B., Amano, H., Akasaki, I. (1999) Optical properties of doped InGaN/GaN multiquantum-well structures. Applied Physics Letters, 74 (22). 3299-3301 doi:10.1063/1.123324
Haratizadeh, H., Monemar, B., Paskov, P. P., Bergman, J. P., Sernelius, B. E., Holtz, P. O., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I. (2004) Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position. Applied Physics Letters, 84 (25). 5071-5073 doi:10.1063/1.1763976
 
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