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Bondar, V. (1999) Properties of Nanocrystalline Gallium Nitride Thin Films Grown on Monocrystalline Substrates and Buffer Layers. physica status solidi (a), 176 (1). 635-638 doi:10.1002/(sici)1521-396x(199911)176:1<635::aid-pssa635>3.0.co;2-e

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Reference TypeJournal (article/letter/editorial)
TitleProperties of Nanocrystalline Gallium Nitride Thin Films Grown on Monocrystalline Substrates and Buffer Layers
Journalphysica status solidi (a)
AuthorsBondar, V.Author
Year1999 (November)Volume176
Issue1
PublisherWiley
DOIdoi:10.1002/(sici)1521-396x(199911)176:1<635::aid-pssa635>3.0.co;2-eSearch in ResearchGate
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Mindat Ref. ID5084932Long-form Identifiermindat:1:5:5084932:9
GUID0
Full ReferenceBondar, V. (1999) Properties of Nanocrystalline Gallium Nitride Thin Films Grown on Monocrystalline Substrates and Buffer Layers. physica status solidi (a), 176 (1). 635-638 doi:10.1002/(sici)1521-396x(199911)176:1<635::aid-pssa635>3.0.co;2-e
Plain TextBondar, V. (1999) Properties of Nanocrystalline Gallium Nitride Thin Films Grown on Monocrystalline Substrates and Buffer Layers. physica status solidi (a), 176 (1). 635-638 doi:10.1002/(sici)1521-396x(199911)176:13.0.co;2-e
In(1999, November) physica status solidi (a) Vol. 176 (1) Wiley

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Bondar, V., Kucharsky, I., Simkiv, B., Akselrud, L., Davydov, V., Dubov, Yu., Popovich, S. (1999) Low-Temperature Synthesis of Gallium Nitride Thin Films Using Reactive Rf-Magnetron Sputtering. physica status solidi (a), 176 (1). 329-332 doi:10.1002/(sici)1521-396x(199911)176:1<329::aid-pssa329>3.0.co;2-e
Wagner, V., Parillaud, O., Bühlmann, H. J., Ilegems, M. (1999) Epitaxy of Gallium Nitride by HVPE Using Low Temperature Intermediate Buffer Layers Deposited by MOVPE. physica status solidi (a), 176 (1). 429-433 doi:10.1002/(sici)1521-396x(199911)176:1<429::aid-pssa429>3.0.co;2-a
Boo, J.-H., Rohr, C., Ho, W. (1999) Growth of Boron Nitride Thin Films on Silicon Substrates Using New Organoboron Precursors. physica status solidi (a), 176 (1). 705-710 doi:10.1002/(sici)1521-396x(199911)176:1<705::aid-pssa705>3.0.co;2-m
Strittmatter, A., Krost, A., Bläsing, J., Bimberg, D. (1999) High Quality GaN Layers Grown by Metalorganic Chemical Vapor Deposition on Si(111) Substrates. physica status solidi (a), 176 (1). 611-614 doi:10.1002/(sici)1521-396x(199911)176:1<611::aid-pssa611>3.0.co;2-1
Dineen, M., Thomas, H., Humphreys, B., McMeekin, S. G. (1999) The Reactive Ion Etching of Gallium Nitride by Methylchloride/Hydrogen. physica status solidi (a), 176 (1). 739-742 doi:10.1002/(sici)1521-396x(199911)176:1<739::aid-pssa739>3.0.co;2-v
Ryan, M. E., Camacho, A. C., Bhardwaj, J. K. (1999) High Etch Rate Gallium Nitride Processing Using an Inductively Coupled Plasma Source. physica status solidi (a), 176 (1). 743-746 doi:10.1002/(sici)1521-396x(199911)176:1<743::aid-pssa743>3.0.co;2-e
(1999) physica status solidi (a), 176 (1). Wiley. doi:10.1002/(sici)1521-396x(199911)176:1<>1.0.co;2-m
Yamamoto, A., Adachi, M., Arita, T., Sugiura, T., Hashimoto, A. (1999) A Comparative Study of MOVPE Growth of InN on GaAs(111) Substrates Using a Nitrided or Grown GaN Buffer Layer. physica status solidi (a), 176 (1). 595-598 doi:10.1002/(sici)1521-396x(199911)176:1<595::aid-pssa595>3.0.co;2-v
Nakamura, S. (1999) Present Status of InGaN-Based Laser Diodes. physica status solidi (a), 176 (1). 15-22 doi:10.1002/(sici)1521-396x(199911)176:1<15::aid-pssa15>3.0.co;2-6
Salzman, J., Uzan-Saguy, C., Meyler, B., Kalish, R. (1999) The Effect of Grain Boundaries on Electrical Conductivity in Thin GaN Layers. physica status solidi (a), 176 (1). 683-687 doi:10.1002/(sici)1521-396x(199911)176:1<683::aid-pssa683>3.0.co;2-2
Stanton, N. M., Hawker, P., Kent, A. J., Cheng, T. S., Foxon, C. T. (1999) Hot Electron Energy Relaxation in Gallium Nitride. physica status solidi (a), 176 (1). 369-372 doi:10.1002/(sici)1521-396x(199911)176:1<369::aid-pssa369>3.0.co;2-z
 
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